Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 11

Results: 24

Effect of Surface State Density on Room Temperature Photoluminescence from Si–SiO[sub 2] Structures in the Range of Band-to-Band Recombination in Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1225, doi. 10.1134/1.1521220

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Pizzini, S.

Publication type:

Article

Nature of Impurity Centers of Rare-Earth Metals and Self-Organization Processes in a-Si:H Films.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1252, doi. 10.1134/1.1521226

By:

Mezdrogina, M. M.;
Trapeznikova, I. N.;
Terukov, E. I.;
Nasredinov, F. S.;
Seregin, N. P.;
Seregin, P. P.

Publication type:

Article

The Formation of β-FeSi[sub 2] Precipitates in Microcrystalline Si.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1235, doi. 10.1134/1.1521222

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Davydov, V. Yu.;
Mosina, G. N.

Publication type:

Article

International Symposium on Photoluminescence and Electroluminescence of Rare-Earth Elements in Semiconductors and Insulators.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1202, doi. 10.1134/1.1521215

By:

Terukov, E. I.

Publication type:

Article

Vadim Fedorovich Masterov, a Scientist and a Teacher.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1199, doi. 10.1134/1.1521214

By:

Ivanov, V. K.;
Popov, B. P.

Publication type:

Article

A Model for the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1209, doi. 10.1134/1.1521217

By:

Aleksandrov, O. V.;
Zakhar’in, A. O.

Publication type:

Article

V. F. Masterov’s School and Fullerene Research at the Department of Experimental Physics, St. Petersburg State Technical University.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1204, doi. 10.1134/1.1521216

By:

Prikhodko, A. V.;
Konkov, O. I.

Publication type:

Article

Emission from Rare-Earth Centers in (ZnTe:Yb):O/GaAs.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1215, doi. 10.1134/1.1521218

By:

Konnov, V. M.;
Loıko, N. N.;
Sadof’ev, Yu. G.;
Trushin, A. S.;
Makhov, E. I.

Publication type:

Article

Temperature Dependences of Photoluminescence Spectra of Single-Crystal Ca[sub 2]GeO[sub 4]:Cr[sup 4+] Films.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1221, doi. 10.1134/1.1521219

By:

Gorshkov, O. N.;
Demidov, E. S.;
Dianov, E. M.;
Kasatkin, A. P.;
Lebedev, V. F.;
Maksimov, G. A.;
Tyurin, S. A.;
Chigineva, A. B.;
Chigirinskiı, Yu. I.;
Shushunov, A. N.

Publication type:

Article

Erbium Electroluminescence in p–i–n Amorphous Hydrogenated Silicon Structures.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1240, doi. 10.1134/1.1521223

By:

Terukov, E. I.;
Gusev, O. B.;
Kon’kov, O. I.;
Undalov, Yu. K.;
Stutzmann, M.;
Janotta, A.;
Mell, H.;
Kleider, J. P.

Publication type:

Article

Photoluminescence and Excitation Features of Nd[sup 3+] Ions in (La[sub 0.97]Nd[sub 0.03])[sub 2]S[sub 3] · 2Ga[sub 2]O[sub 3] Glasses.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1244, doi. 10.1134/1.1521224

By:

Babaev, A. A.;
Zobov, E. M.;
Sokolov, V. V.;
Sharapudinova, A. Kh.

Publication type:

Article

Conductivity and Structure of Er-Doped Amorphous Hydrogenated Silicon Films.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1248, doi. 10.1134/1.1521225

By:

Kon’kov, O. I.;
Terukov, E. I.;
Granitsina, L. S.

Publication type:

Article

Buried Nanoscale Damaged Layers Formed in Si and SiC Crystals as a Result of High-Dose Proton Implantation.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1227, doi. 10.1134/1.1521221

By:

Kozlov, V. A.;
Kozlovskiı, V. V.;
Titkov, A. N.;
Dunaevskiı, M. S.;
Kryzhanovskiı, A. K.

Publication type:

Article

The Influence of Sinks of Intrinsic Point Defects on Phosphorus Diffusion in Si.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1260, doi. 10.1134/1.1521227

By:

Aleksandrov, O. V.

Publication type:

Article

Possibility of Observing Bose–Einstein Condensation in Semiconductors via Mössbauer Spectroscopy using the [sup 67]Zn Isotope.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1267, doi. 10.1134/1.1521228

By:

Nemov, S. A.;
Seregin, N. P.;
Irkaev, S. M.

Publication type:

Article

Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1270, doi. 10.1134/1.1521229

By:

Lebedev, A. A.;
Kozlovski, V. V.;
Strokan, N. B.;
Davydov, D. V.;
Ivanov, A. M.;
Strel’chuk, A. M.;
Yakimova, R.

Publication type:

Article

Kinetic Theory of Negative Magnetoresistance as an Alternative to Weak Localization in Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1276, doi. 10.1134/1.1521230

By:

Kaminskiı, V. É.

Publication type:

Article

The Influence of Adsorbate on the Work Function and Penetrability of the Surface Potential Barrier of GaAs(110) Single Crystal.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1283, doi. 10.1134/1.1521231

By:

Asalkhanov, Yu. I.;
Abarykov, V. N.

Publication type:

Article

ZnMnSe/ZnSSe Type-II Semimagnetic Superlattices: Growth and Magnetoluminescence Properties.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1288, doi. 10.1134/1.1521232

By:

Toropov, A. A.;
Lebedev, A.V.;
Sorokin, S. V.;
Solnyshkov, D. D.;
Ivanov, S. V.;
Kop’ev, P. S.;
Buyanova, I. A.;
Chen, W. M.;
Monemar, B.

Publication type:

Article

Ordering of Nanostructures in a Si/Ge[sub 0.3]Si[sub 0.7]/Ge System during Molecular Beam Epitaxy.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1294, doi. 10.1134/1.1521233

By:

Cirlin, G. E.;
Egorov, V. A.;
Sokolov, L. V.;
Werner, P.

Publication type:

Article

Effect of Fullerene on the Photogeneration and Transport of Charge Carriers in Triphenylamine-Containing Polyimides.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1299, doi. 10.1134/1.1521234

By:

Aleksandrova, E. L.

Publication type:

Article

Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1303, doi. 10.1134/1.1521235

By:

Astakhova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Yakovlev, Yu. P.

Publication type:

Article

High Power Single-Mode (λ = 1.3–1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1308, doi. 10.1134/1.1521236

By:

Leshko, A. Yu.;
Lyutetskiı, A. V.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Fetisova, N. V.;
Golikova, E. G.;
Ryaboshtan, Yu. A.;
Tarasov, I. S.

Publication type:

Article

High Efficiency (η[sub D] > 80%) Long Wavelength (λ > 1.25 μm) Quantum Dot Diode Lasers on GaAs Substrates.

Published in:

Semiconductors, 2002, v. 36, n. 11, p. 1315, doi. 10.1134/1.1521237

By:

Mikhrin, S. S.;
Zhukov, A. E.;
Kovsh, A. R.;
Maleev, N. A.;
Vasil’ev, A. P.;
Semenova, E. S.;
Ustinov, V. M.;
Kulagina, M. M.;
Nikitina, E. V.;
Soshnikov, I. P.;
Shernyakov, Yu. M.;
Livshits, D. A.;
Kryjanovskaya, N. V.;
Sizov, D. S.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Bimberg, D.;
Alferov, Zh. I.

Publication type:

Article