Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 10
Results: 23
Thermodynamic Stability of Bulk and Epitaxial Ge[sub 1 – ][sub x]Sn[sub x] Semiconductor Alloys.
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- Semiconductors, 2002, v. 36, n. 10, p. 1073, doi. 10.1134/1.1513846
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- Article
The Effect of the Concentration of the Majority Charge Carriers and Irradiation Intensity on the Efficiency of Radiation-Defect Production in n-Si Crystals.
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- Semiconductors, 2002, v. 36, n. 10, p. 1077, doi. 10.1134/1.1513847
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- Article
Dependence of the Annealing Kinetics of A Centers and Divacancies on Temperature, Particle Energy, and Irradiation Dose for n-Si Crystals.
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- Semiconductors, 2002, v. 36, n. 10, p. 1079, doi. 10.1134/1.1513848
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- Article
Chalcogen Dimers in Silicon.
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- Semiconductors, 2002, v. 36, n. 10, p. 1083, doi. 10.1134/1.1513849
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- Article
Electronic Properties of Liquid Tl[sub 2]Te,Tl[sub 2]Se,Ag[sub 2]Te,Cu[sub 2]Te, and Cu[sub 2]Se Alloys.
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- Semiconductors, 2002, v. 36, n. 10, p. 1123, doi. 10.1134/1.1513855
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- Article
The Nucleation of Coherent Semiconductor Islands during the Stranski–Krastanov Growth Induced by Elastic Strains.
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- Semiconductors, 2002, v. 36, n. 10, p. 1097, doi. 10.1134/1.1513851
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- Article
Investigation of Vacancy-Type Complexes in GaN and AlN using Positron Annihilation.
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- Semiconductors, 2002, v. 36, n. 10, p. 1106, doi. 10.1134/1.1513852
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- Article
The Influence of Shallow Impurities on the Temperature Dependence of Microhardness and the Photomechanical Effect in Semiconductors.
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- Semiconductors, 2002, v. 36, n. 10, p. 1111, doi. 10.1134/1.1513853
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- Article
Neutron-Irradiation-Induced Effects Caused by Divacancy Clusters with a Tetravacancy Core in Float-Zone Silicon.
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- Semiconductors, 2002, v. 36, n. 10, p. 1114, doi. 10.1134/1.1513854
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- Article
Chemical Bonding and Elastic Constants of Certain Ternary III–V Solid Solutions.
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- Semiconductors, 2002, v. 36, n. 10, p. 1091, doi. 10.1134/1.1513850
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- Article
Dependence of GaN Photoluminescence on the Excitation Intensity.
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- Semiconductors, 2002, v. 36, n. 10, p. 1128, doi. 10.1134/1.1513856
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- Article
Photosensitivity of Structures Based on I–III[sub n]–VI[sub m] Ternary Compounds Containing Ordered Vacancies.
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- Semiconductors, 2002, v. 36, n. 10, p. 1132
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- Article
Effect of the State of the Silicon Surface on Hydrogen Sensitivity of Pd/n-Si Barrier Structures.
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- Semiconductors, 2002, v. 36, n. 10, p. 1136, doi. 10.1134/1.1513858
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- Article
Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes.
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- Semiconductors, 2002, v. 36, n. 10, p. 1138, doi. 10.1134/1.1513859
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- Article
Anisotropy of Magnetooptical Absorption of Quantum Dot–Impurity Center Complexes.
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- Semiconductors, 2002, v. 36, n. 10, p. 1146, doi. 10.1134/1.1513860
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- Article
Dependence of the Optical Gap of Si Quantum Dots on the Dot Size.
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- Semiconductors, 2002, v. 36, n. 10, p. 1154, doi. 10.1134/1.1513861
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- Article
Dependence of Scattering of Quasi-Two-Dimensional Electrons by Acoustic Phonons on the Parameters of a GaAs/Al[sub x]Ga[sub 1 – ][sub x]As Superlattice.
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- Semiconductors, 2002, v. 36, n. 10, p. 1159, doi. 10.1134/1.1513862
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- Article
Temperature Dependence of Conductance of Electrostatically Disordered Quasi-2D Semiconductor Systems Near an Insulator–Metal Percolation Transition.
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- Semiconductors, 2002, v. 36, n. 10, p. 1163, doi. 10.1134/1.1513863
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- Article
Photoluminescence and Recombination Luminescence in Amorphous Molecular Semiconductors Doped with Organic Dyes.
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- Semiconductors, 2002, v. 36, n. 10, p. 1169, doi. 10.1134/1.1513864
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- Article
Crystallization of Amorphous Hydrogenated Silicon Films Deposited under Various Conditions.
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- Semiconductors, 2002, v. 36, n. 10, p. 1180, doi. 10.1134/1.1513865
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- Article
Electroluminescence from Porous Silicon in the Cathodic Reduction of Persulfate Ions: Degree of Reversibility of the Tuning Effect.
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- Semiconductors, 2002, v. 36, n. 10, p. 1184, doi. 10.1134/1.1513866
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- Article
Space Charge Limited Current in Porous Silicon and Anatase (TiO[sub 2]).
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- Semiconductors, 2002, v. 36, n. 10, p. 1188, doi. 10.1134/1.1513867
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- Article
Influence of the Design and Material Parameters on the Current–Voltage Characteristics of Two-Island Single-Electron Chains.
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- Semiconductors, 2002, v. 36, n. 10, p. 1192, doi. 10.1134/1.1513868
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- Article