Works matching DE "SEMICONDUCTOR-metal boundaries"

Results: 127

MODELACIÓN DE LA CONDUCCIÓN TRANSVERSAL EN COMPÓSITOS SUPERCONDUCTORES.

Published in:

Revista Cubana de Física, 2011, v. 28, n. 1, p. 35

By:

Borroto, A.;
Del Río, L.;
Arronte, M.;
Altshuler, E.

Publication type:

Article

On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8

By:

Büyükbaş Uluşan, A.;
Tataroğlu, A.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z

By:

Vinod, P. N.

Publication type:

Article

Chemical Doping Effects on CVD‐Grown Multilayer MoSe2 Transistor.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700639

By:

Yoo, Hocheon;
Hong, Seongin;
Moon, Hyunseong;
On, Sungmin;
Ahn, Hyungju;
Lee, Han‐Koo;
Kim, Sunkook;
Hong, Young Ki;
Kim, Jae‐Joon

Publication type:

Article

Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.

Published in:

Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020

By:

GUO Yu;
ZHU Guo-fu

Publication type:

Article

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209

By:

Giannazzo, F.;
Fisichella, G.;
Piazza, A.;
Di Franco, S.;
Greco, G.;
Agnello, S.;
Roccaforte, F.

Publication type:

Article

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes.

Published in:

Advances in Condensed Matter Physics, 2010, p. 1, doi. 10.1155/2010/526929

By:

Pipinys, P.;
Lapeika, V.

Publication type:

Article

STRAIN-TUNABLE BAND GAP OF 3 SHEET: A FIRST-PRINCIPLES INVESTIGATION.

Published in:

Modern Physics Letters B, 2013, v. 27, n. 15, p. -1, doi. 10.1142/S0217984913501108

By:

LIU, GANG;
WU, MU SHENG;
OUYANG, CHU YING;
XU, BO

Publication type:

Article

An improved power loss model of full-bridge converter under light load condition.

Published in:

PLoS ONE, 2018, v. 13, n. 12, p. 1, doi. 10.1371/journal.pone.0208239

By:

Yao, Lele;
Li, Donghui;
Liu, Lingling

Publication type:

Article

Sb-contained thin films Structural and electric properties.

Published in:

Materials Science (0137-1339), 2006, v. 24, n. 4, p. 929

By:

Bilozertseva, V. I.;
Khlyap, H. M.;
Shkumbatyuk, P. S.;
Dyakonenko, N. L.;
Krivonos, S. S.

Publication type:

Article

Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range.

Published in:

Radiophysics & Quantum Electronics, 2004, v. 47, n. 9, p. 688, doi. 10.1007/s11141-005-0006-9

By:

Boshkov, V. G.;
Ziatzev, S. E.

Publication type:

Article

In Situ Photocatalytically Heterostructured ZnOAg Nanoparticle Composites as Effective Cathode-Modifying Layers for Air-Processed Polymer Solar Cells.

Published in:

Chemistry - A European Journal, 2015, v. 21, n. 33, p. 11899, doi. 10.1002/chem.201405073

By:

Yuan, Kai;
Chen, Lie;
Chen, Yiwang

Publication type:

Article

A Simple Method Producing Shadow Masks Used in Electrical Characterization Techniques.

Published in:

Instruments & Experimental Techniques, 2003, v. 46, n. 3, p. 410, doi. 10.1023/A:1024443228073

By:

Coskun, C.;
Efeoglu, H.

Publication type:

Article

A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.

Published in:

Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161

By:

Matamoros-Ambrocio, Mayra;
Ruiz-Peralta, María De Lourdes;
Chigo-Anota, Ernesto;
García-Serrano, Jesús;
Pérez-Centeno, Armando;
Sánchez-Cantú, Manuel;
Rubio-Rosas, Efraín;
Escobedo-Morales, Alejandro

Publication type:

Article

First-order phase transition characteristic of the high temperature metal–semiconductor transition in [Ca2CoO3]0.62[CoO2].

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 4, p. 911, doi. 10.1007/s00339-008-4849-8

By:

Cheng, Jinguang;
Sui, Yu;
Wang, Yang;
Wang, Xianjie;
Su, Wenhui

Publication type:

Article

Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 3, p. 633, doi. 10.1007/s00339-008-4848-9

By:

Rahman, Faiz;
Sun Xu;
Watson, Ian;
Mutha, Dinesh;
Oxland, Richard;
Johnson, Nigel;
Banerjee, Abhishek;
Wasige, Edward

Publication type:

Article

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 3, p. 561, doi. 10.1007/s00339-004-2673-3

By:

Reddy, V. R.;
Kim, S.-H.;
Seong, T.-Y.

Publication type:

Article

Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30

By:

KHONDKARYAN, H. D.

Publication type:

Article

EXTRACTION OF ILLUMINATED SOLAR CELL AND SCHOTTKY DIODE PARAMETERS USING A GENETIC ALGORITHM.

Published in:

International Journal of Modern Physics C: Computational Physics & Physical Computation, 2005, v. 16, n. 7, p. 1043, doi. 10.1142/S0129183105007704

By:

SELLAI, A.;
OUENNOUGHI, Z.

Publication type:

Article

Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233

By:

Stognei, O.;
Maliki, A.;
Grebennikov, A.;
Semenenko, K.;
Bulovatskaya, E.;
Sitnikov, A.

Publication type:

Article

Temperature dependences of the contact resistivity in ohmic contacts to n-InN.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 461, doi. 10.1134/S1063782615040193

By:

Sachenko, A.;
Belyaev, A.;
Boltovets, N.;
Brunkov, P.;
Jmerik, V.;
Ivanov, S.;
Kapitanchuk, L.;
Konakova, R.;
Klad'ko, V.;
Romanets, P.;
Saja, P.;
Safryuk, N.;
Sheremet, V.

Publication type:

Article

The nature of electrical interaction of Schottky contacts.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1009, doi. 10.1134/S1063782611080227

By:

Torkhov, N.

Publication type:

Article

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174

By:

Konin, A.

Publication type:

Article

The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 599, doi. 10.1134/S1063782611050241

By:

Pavlyk, B.;
Hrypa, A.;
Slobodzyan, D.;
Lys, R.;
Shykoryak, J.;
Didyk, R.

Publication type:

Article

Current flow mechanism in ohmic contact to n-4 H-SiC.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 463, doi. 10.1134/S1063782610040093

By:

Blank, T. V.;
Goldberg, Yu. A.;
Posse, E. A.;
Soldatenkov, F. Yu.

Publication type:

Article

Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1315, doi. 10.1134/S1063782608110134

By:

Bessolov, V. N.;
Blank, T. V.;
Goldberg, Yu. A.;
Konstantinov, O. V.;
Posse, E. A.

Publication type:

Article

Thermal-resistant TiB x - n-GaP Schottky diodes.

Published in:

Semiconductors, 2008, v. 42, n. 4, p. 453, doi. 10.1134/S1063782608040143

By:

Belyaev, A.;
Boltovets, N.;
Ivanov, V.;
Kamalov, A.;
Kapitanchuk, L.;
Konakova, R.;
Kudryk, Ya.;
Lytvyn, O.;
Milenin, V.;
Nasyrov, M.

Publication type:

Article

Effect of energy-band bending on the thermopower in bipolar semiconductors.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 272, doi. 10.1134/S1063782607030050

By:

Konin, A.

Publication type:

Article

The mechanism of current flow in an alloyed In-GaN ohmic contact.

Published in:

Semiconductors, 2006, v. 40, n. 10, p. 1173, doi. 10.1134/S1063782606100095

By:

Blank, T.;
Gol'dberg, Yu.;
Konstantinov, O.;
Nikitin, V.;
Posse, E.

Publication type:

Article

Potential Barrier Formation at a Metal–Semiconductor Contact Using Selective Removal of Atoms.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 1036, doi. 10.1134/1.1797481

By:

Gurovich, B. A.;
Aronzon, B. A.;
Ryl'kov, V. V.;
Ol'shansk&iitilde;, E. D.;
Kuleshova, E. A.;
Dolg&iitilde;, D. I.;
Kovalev, D. Yu.;
Filippov, V. I.

Publication type:

Article

Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor.

Published in:

Semiconductors, 2002, v. 36, n. 9, p. 1001, doi. 10.1134/1.1507282

By:

Kuznetsov, G. V.

Publication type:

Article

Hysteresis of the Photonic Band Gap in VO[sub 2] Photonic Crystal in the Semiconductor–Metal Phase Transition.

Published in:

Semiconductors, 2002, v. 36, n. 9, p. 1043, doi. 10.1134/1.1507288

By:

Golubev, V. G.;
Kurdyukov, D. A.;
Pevtsov, A. B.;
Sel’kin, A. V.;
Shadrin, E. B.;
Il’inskiı, A. V.;
Boeyink, R.

Publication type:

Article

An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 539, doi. 10.1134/1.1371618

By:

Bulyarskiı, S. V.;
Zhukov, A. V.

Publication type:

Article

Density-of-states anomaly and tunneling conductance of Au/p-GaAs[sub 0.94]Sb[sub 0.06] contacts near the metal–insulator transition.

Published in:

Semiconductors, 1998, v. 32, n. 12, p. 1270, doi. 10.1134/1.1187613

By:

Allen, T. Yu.;
Nazhmudinov, Kh. G.;
Polyanskaya, T. A.

Publication type:

Article

Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1196, doi. 10.1134/1.1187591

By:

Bozhkov, V. G.;
Kagadeı, V. A.;
Torkhov, N. A.

Publication type:

Article

Fabrication of Nickel Contacts for Mg2Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1754, doi. 10.1007/s11664-018-06889-7

By:

Mitra, Kunal;
Mahapatra, S.;
Dasgupta, T.

Publication type:

Article

Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5099, doi. 10.1007/s11664-018-6414-3

By:

Das, H.;
Sunkari, S.;
Naas, H.

Publication type:

Article

Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6563, doi. 10.1007/s11664-017-5696-1

By:

Bouzid, F.;
Dehimi, L.;
Pezzimenti, F.

Publication type:

Article

Ohmic Contact of Au/Mo on HgCdTe.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y

By:

Liu, Dan;
Lin, Chun;
Zhou, Songmin;
Hu, Xiaoning

Publication type:

Article

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D.;
Chai, F.;
Odekirk, B.

Publication type:

Article

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1

By:

Catalfamo, Frank;
Yen, Tingfang;
Yun, Juhyung;
Anderson, Wayne

Publication type:

Article

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3

By:

Voss, L. F.;
Stafford, L.;
Khanna, R.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Kravchenko, I. I.

Publication type:

Article

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2

By:

Chang, H. C.;
Lee, C. S.;
Chen, S. H.;
Chang, E. Y.;
He, J. Z.

Publication type:

Article

Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365

By:

You, Tiangui;
Shuai, Yao;
Luo, Wenbo;
Du, Nan;
Bürger, Danilo;
Skorupa, Ilona;
Hübner, René;
Henker, Stephan;
Mayr, Christian;
Schüffny, René;
Mikolajick, Thomas;
Schmidt, Oliver G.;
Schmidt, Heidemarie

Publication type:

Article

Conversion of environmental heat to electric energy in the metal-dielectric-semiconductor-metal system.

Published in:

Technical Physics, 2013, v. 58, n. 11, p. 1619, doi. 10.1134/S1063784213110170

By:

Lunin, L. S.;
Karapet’yan, G. Ya.;
Dneprovskii, V. G.;
Kataev, V. F.

Publication type:

Article

Mechanism of current flow in alloyed ohmic In/GaAs contacts.

Published in:

Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235

By:

Blank, T.;
Gol’dberg, Yu.;
Konstantinov, O.;
Nikitin, V.;
Posse, E.

Publication type:

Article

Hysteresis Loop Construction for the Metal–Semiconductor Phase Transition in Vanadium Dioxide Films.

Published in:

Technical Physics, 2002, v. 47, n. 9, p. 1134, doi. 10.1134/1.1508078

By:

Klimov, V. A.;
Timofeeva, I. O.;
Khanin, S. D.;
Shadrin, E. B.;
Ilinskiı, A. V.;
Silva-Andrade, F.

Publication type:

Article

Nonequilibrium Semiconductor–Metal Phase Transition Due to Self-Heating.

Published in:

Technical Physics, 2002, v. 47, n. 7, p. 932, doi. 10.1134/1.1495063

By:

Melkikh, A. V.;
Povzner, A. A.

Publication type:

Article

Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.

Published in:

Technical Physics, 2001, v. 46, n. 9, p. 1128, doi. 10.1134/1.1404165

By:

Gol’dberg, Yu. A.;
Posse, E. A.

Publication type:

Article