Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 9

Results: 24

Mechanism of Copper Diffusion over the Si(110) Surface.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 958, doi. 10.1134/1.1507271
By:
- Dolbak, A. E.;
- Zhachuk, R. A.;
- Olshanetsky, B. Z.
Publication type:
Article
Internal Friction and Effective Shear Modulus of Single-Crystal Silicon in Early Stages of Oxygen Precipitation.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 962, doi. 10.1134/1.1507272
By:
- Motskin, V. V.;
- Oleinich-Lysyuck, A. V.;
- Raranskiı, N. D.;
- Fodchuk, I. M.
Publication type:
Article
The Temperature and Concentration Dependences of the Charge Carrier Mobility in PbTe–MnTe Solid Solutions.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 966, doi. 10.1134/1.1507273
By:
- Rogacheva, E. I.;
- Krivul’kin, I. M.
Publication type:
Article
Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 971, doi. 10.1134/1.1507274
By:
- Stepanov, N. P.;
- Grabov, V. M.
Publication type:
Article
Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb [sup 67]Ga([sup 67]Zn) and [sup 67]Cu([sup 67]Zn) by Emission Mössbauer Spectroscopy.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 975, doi. 10.1134/1.1507275
By:
- Seregin, N. P.;
- Nemov, S. A.;
- Irkaev, S. M.
Publication type:
Article
Cathodoluminescence of ZnO/GaN/α-Al[sub 2]O[sub 3] Heteroepitaxial Structures Grown by Chemical Vapor Deposition.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 977, doi. 10.1134/1.1507276
By:
- Chukichev, M. V.;
- Ataev, B. M.;
- Mamedov, V. V.;
- Alivov, Ya. I.;
- Khodos, I. I.
Publication type:
Article
Experimental Observation of Splitting of the Light and Heavy Hole Bands in Elastically Strained GaAsN.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 981, doi. 10.1134/1.1507277
By:
- Egorov, A. Yu.;
- Semenova, E. S.;
- Ustinov, V. M.;
- Hong, Y. G.;
- Tu, C.
Publication type:
Article
Variations in the Properties of an Implantation-Synthesized Si[sub x]N[sub y]–Si Heterosystem as a Result of Thermal and Ion-Beam Treatments.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 985, doi. 10.1134/1.1507278
By:
- Karzanov, V. V.;
- Markov, K. A.;
- Sdobnyakov, V. V.;
- Demidov, E. S.
Publication type:
Article
Optical Storage on the Basis of an n-InSb–SiO[sub 2]–p-Si Heterostructure.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 990, doi. 10.1134/1.1507279
By:
- Nikol’skiı, Yu. A.
Publication type:
Article
Field-Dependent Photosensitivity of In–SiO[sub 2]–Cd[sub 0.28]Hg[sub 0.72]Te Metal–Insulator–Semiconductor Structures with an Opaque Field Electrode.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 993
By:
- Vasil’ev, V. V.;
- Kravchenko, A. F.;
- Mashukov, Yu. P.
Publication type:
Article
Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 997, doi. 10.1134/1.1507281
By:
- Volovik, B. V.;
- Kryzhanovskaya, N. V.;
- Sizov, D. S.;
- Kovsh, A. R.;
- Tsatsul’nikov, A. F.;
- Chi, J. Y.;
- Wang, J. S.;
- Wei, L.;
- Ustinov, V. M.
Publication type:
Article
Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1001, doi. 10.1134/1.1507282
By:
- Kuznetsov, G. V.
Publication type:
Article
Adsorption and Transformation of C[sub 60] Molecules at the (100) Si Surface.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1008, doi. 10.1134/1.1507283
By:
- Gall, N. R.;
- Rut’kov, E. V.;
- Tontegode, A. Ya.
Publication type:
Article
Stark Effect in Vertically Coupled Quantum Dots in InAs–GaAs Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1013, doi. 10.1134/1.1507284
By:
- Sobolev, M. M.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Musikhin, Yu. G.;
- Ledentsov, N. N.
Publication type:
Article
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
By:
- Sizov, D. S.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Cherkashin, N. A.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. B.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Vasil’ev, A. P.;
- Selin, R.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1027, doi. 10.1134/1.1507286
By:
- Kaganovich, É. B.;
- Kizyak, I. M.;
- Kirillova, S. I.;
- Manoılov, É. G.;
- Primachenko, V. E.;
- Svechnikov, S. V.;
- Venger, E. F.
Publication type:
Article
Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1033, doi. 10.1134/1.1507287
By:
- Astrova, E. V.;
- Ratnikov, V. V.;
- Remenyuk, A. D.;
- Shul’pina, I. L.
Publication type:
Article
Hysteresis of the Photonic Band Gap in VO[sub 2] Photonic Crystal in the Semiconductor–Metal Phase Transition.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1043, doi. 10.1134/1.1507288
By:
- Golubev, V. G.;
- Kurdyukov, D. A.;
- Pevtsov, A. B.;
- Sel’kin, A. V.;
- Shadrin, E. B.;
- Il’inskiı, A. V.;
- Boeyink, R.
Publication type:
Article
Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1048, doi. 10.1134/1.1507289
By:
- Nikolaev, Yu. A.;
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Terukov, E. I.;
- Fuhs, W.;
- Froitzheim, A.
Publication type:
Article
Analysis of High-Frequency Response and Nonlinear Coherent Generation of Resonance–Tunneling Diodes within a Broad Frequency Range with Account of Electron–Electron Interaction.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1053, doi. 10.1134/1.1507290
By:
- Elesin, V. F.;
- Kateev, I. Yu.;
- Podlivaev, A. I.
Publication type:
Article
Study of the Potential Distribution in a Forward-Biased Silicon Diode Using Electrostatic Force Microscopy.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1058, doi. 10.1134/1.1507291
By:
- Ankudinov, A. V.;
- Titkov, A. N.;
- Laiho, R.;
- Kozlov, V. A.
Publication type:
Article
MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1065, doi. 10.1134/1.1507292
By:
- Bulaev, P. V.;
- Kapitonov, V. A.;
- Lutetskiı, A. V.;
- Marmalyuk, A. A.;
- Nikitin, D. B.;
- Nikolaev, D. N.;
- Padalitsa, A. A.;
- Pikhtin, N. A.;
- Bondarev, A. D.;
- Zalevskiı, I. D.;
- Tarasov, I. S.
Publication type:
Article
Éduard Mushegovich Kazaryan (on his 60th birthday).
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1070, doi. 10.1134/1.1507293
Publication type:
Article
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
By:
- Vilisova, M. D.;
- Kunitsyn, A. E.;
- Lavrent’eva, L. G.;
- Preobrazhenskiı, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Toropov, S. E.;
- Chaldyshev, V. V.
Publication type:
Article