Study of Zinc Impurity Atoms in GaP, GaAs, and GaSb [sup 67]Ga([sup 67]Zn) and [sup 67]Cu([sup 67]Zn) by Emission Mössbauer Spectroscopy.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 975, doi. 10.1134/1.1507275
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 9
Results: 24
1
2
Effect of Carrier Localization on the Optical Properties of MBE-Grown GaAsN/GaAs Heterostructures.
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- Semiconductors, 2002, v. 36, n. 9, p. 997, doi. 10.1134/1.1507281
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- Publication type:
- Article
3
Mechanism of Copper Diffusion over the Si(110) Surface.
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- Semiconductors, 2002, v. 36, n. 9, p. 958, doi. 10.1134/1.1507271
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- Publication type:
- Article
4
Internal Friction and Effective Shear Modulus of Single-Crystal Silicon in Early Stages of Oxygen Precipitation.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 962, doi. 10.1134/1.1507272
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- Publication type:
- Article
5
Cathodoluminescence of ZnO/GaN/α-Al[sub 2]O[sub 3] Heteroepitaxial Structures Grown by Chemical Vapor Deposition.
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- Semiconductors, 2002, v. 36, n. 9, p. 977, doi. 10.1134/1.1507276
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- Publication type:
- Article
6
Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy.
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- Semiconductors, 2002, v. 36, n. 9, p. 953, doi. 10.1134/1.1507270
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- Publication type:
- Article
7
The Temperature and Concentration Dependences of the Charge Carrier Mobility in PbTe–MnTe Solid Solutions.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 966, doi. 10.1134/1.1507273
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- Publication type:
- Article
8
Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals.
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- Semiconductors, 2002, v. 36, n. 9, p. 971, doi. 10.1134/1.1507274
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- Publication type:
- Article
9
Variations in the Properties of an Implantation-Synthesized Si[sub x]N[sub y]–Si Heterosystem as a Result of Thermal and Ion-Beam Treatments.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 985, doi. 10.1134/1.1507278
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- Publication type:
- Article
10
Experimental Observation of Splitting of the Light and Heavy Hole Bands in Elastically Strained GaAsN.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 981, doi. 10.1134/1.1507277
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- Publication type:
- Article
11
Optical Storage on the Basis of an n-InSb–SiO[sub 2]–p-Si Heterostructure.
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- Semiconductors, 2002, v. 36, n. 9, p. 990, doi. 10.1134/1.1507279
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- Publication type:
- Article
12
Field-Dependent Photosensitivity of In–SiO[sub 2]–Cd[sub 0.28]Hg[sub 0.72]Te Metal–Insulator–Semiconductor Structures with an Opaque Field Electrode.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 993
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- Publication type:
- Article
13
Charge Carrier Transport through the Contact of Metal with a Superconducting Semiconductor.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1001, doi. 10.1134/1.1507282
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- Publication type:
- Article
14
Adsorption and Transformation of C[sub 60] Molecules at the (100) Si Surface.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1008, doi. 10.1134/1.1507283
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- Publication type:
- Article
15
Stark Effect in Vertically Coupled Quantum Dots in InAs–GaAs Heterostructures.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1013, doi. 10.1134/1.1507284
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- Publication type:
- Article
16
The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1020, doi. 10.1134/1.1507285
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- Publication type:
- Article
17
Photoluminescent and Electronic Properties of Nanocrystalline Silicon Doped with Gold.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1027, doi. 10.1134/1.1507286
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- Publication type:
- Article
18
Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1033, doi. 10.1134/1.1507287
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- Publication type:
- Article
19
Hysteresis of the Photonic Band Gap in VO[sub 2] Photonic Crystal in the Semiconductor–Metal Phase Transition.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1043, doi. 10.1134/1.1507288
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- Publication type:
- Article
20
Photoelectric Phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al Solar Cells.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1048, doi. 10.1134/1.1507289
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- Publication type:
- Article
21
Analysis of High-Frequency Response and Nonlinear Coherent Generation of Resonance–Tunneling Diodes within a Broad Frequency Range with Account of Electron–Electron Interaction.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1053, doi. 10.1134/1.1507290
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- Publication type:
- Article
22
Study of the Potential Distribution in a Forward-Biased Silicon Diode Using Electrostatic Force Microscopy.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1058, doi. 10.1134/1.1507291
- By:
- Publication type:
- Article
23
MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact.
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1065, doi. 10.1134/1.1507292
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- Publication type:
- Article
24
Éduard Mushegovich Kazaryan (on his 60th birthday).
- Published in:
- Semiconductors, 2002, v. 36, n. 9, p. 1070, doi. 10.1134/1.1507293
- Publication type:
- Article