Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 7

Results: 20

Inhomogeneous Broadening of the Ground Electron Level in a Quantum Dot Array.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 821, doi. 10.1134/1.1493756

By:

Belyavskiı, V. I.;
Shevtsov, S. V.

Publication type:

Article

GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 816

By:

Solov’ev, V. A.;
Toropov, A. A.;
Meltser, B. Ya.;
Terent’ev, Ya. A.;
Kyutt, R. N.;
Sitnikova, A. A.;
Semenov, A. N.;
Ivanov, S. V.;
Motlan;
Goldys, E. M.;
Kop’ev, P. S.

Publication type:

Article

Study of the Effect of Electron Irradiation on a GaSe–SiO[sub 2] Structure by Spectroscopic Methods.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 805, doi. 10.1134/1.1493753

By:

Ibragimov, T. D.;
Dzhafarova, E. A.;
Safarov, Z. B.

Publication type:

Article

Special Features of the Magnetodiode Effect in Multivalley Semiconductors at Low Temperatures.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 793, doi. 10.1134/1.1493751

By:

Abramov, A. A.;
Gorbatyı, I. N.

Publication type:

Article

Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 717, doi. 10.1134/1.1493739

By:

Sankin, V. I.

Publication type:

Article

Effect of Long-Term Annealing on Accumulation of Impurities.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 740, doi. 10.1134/1.1493740

By:

Bykovskiı, Yu. A.;
Voronkova, G. M.;
Grigor’ev, V. V.;
Zuev, V. V.;
Zuev, A. V.;
Kiryukhin, A. D.;
Chmyrev, V. I.;
Shcherbakov, S. A.

Publication type:

Article

Analysis of the Size-Distribution Function of Metallic Nanoclusters in a Hydrogenated Amorphous Carbon Host.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 743, doi. 10.1134/1.1493741

By:

Ivanov-Omskiı, V. I.;
Lodygin, A. B.;
Yastrebov, S. G.

Publication type:

Article

Modification of the Electrical and Photoelectric Properties of Mg[sub 0.15]Cd[sub 0.85]Te Solid Solutions as a Result of Pulsed Laser Irradiation within the Transparency Range.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 747, doi. 10.1134/1.1493742

By:

Baıdullaeva, A.;
Venger, E. F.;
Vlasenko, A. I.;
Lomovtsev, A. V.;
Mozol’, P. E.

Publication type:

Article

Titanium, Vanadium, and Nickel Impurities in 3C-SiC: Electronic Structure and Lattice Relaxation Effects.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 751, doi. 10.1134/1.1493743

By:

Medvedeva, N. I.;
Yuryeva, É. I.;
Ivanovskiı, A. L.

Publication type:

Article

Parameters of Excitons in Monoclinic Zinc Diarsenide.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 755, doi. 10.1134/1.1493744

By:

Kozlov, A. I.;
Kozlova, S. G.;
Matveev, A. V.;
Sobolev, V. V.

Publication type:

Article

Structure and Properties of Silicon Carbide Grown on Porous Substrate by Vacuum Sublimation Epitaxy.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 758, doi. 10.1134/1.1493745

By:

Savkina, N. S.;
Ratnikov, V. V.;
Rogachev, A. Yu.;
Shuman, V. B.;
Tregubova, A. S.;
Volkova, A. A.

Publication type:

Article

The Effect of Composition on the Properties and Defect Structure of the CdS–Ga[sub 2]S[sub 3] Solid Solution.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 763, doi. 10.1134/1.1493746

By:

Venger, E. F.;
Ermolovich, I. B.;
Milenin, V. V.;
Papusha, V. P.

Publication type:

Article

Microwave Magnetoresistance of Compensated p-Ge:Ga in the Region of the Insulator–Metal Phase Transition.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 772, doi. 10.1134/1.1493747

By:

Veınger, A. I.;
Zabrodskiı, A. G.;
Tisnek, T. V.

Publication type:

Article

Thermally Stimulated Currents in MnIn[sub 2]S[sub 4] Single Crystals.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 782, doi. 10.1134/1.1493748

By:

Niftiev, N. N.

Publication type:

Article

E[sub 0] Photoreflectance Spectra of Semiconductor Structures with a High Density of Interface States.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 784, doi. 10.1134/1.1493749

By:

Kuz’menko, R. V.;
Domashevskaya, É. P.

Publication type:

Article

Switching Effect in Si–CdS Heterojunctions Synthesized in Highly Nonequilibrium Conditions.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 789, doi. 10.1134/1.1493750

By:

Belyaev, A. P.;
Rubets, V. P.

Publication type:

Article

Calculation of the Low-Field Mobility of Quasi-Two-Dimensional Electrons in a GaAs/Al[sub 0.36]Ga[sub 0.64]As Superlattice at Temperatures in the Region of 77 K.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 808, doi. 10.1134/1.1493754

By:

Borisenko, S. I.

Publication type:

Article

Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 800, doi. 10.1134/1.1493752

By:

Nikolaev, D. V.;
Antonova, I. V.;
Naumova, O. V.;
Popov, V. P.;
Smagulova, S. A.

Publication type:

Article

Optically Pumped “Immersion-Lens” Infrared Light Emitting Diodes Based on Narrow-Gap III–V Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 828, doi. 10.1134/1.1493757

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Amorphization of the Surface Region in Epitaxial n-GaAs Treated with Atomic Hydrogen.

Published in:

Semiconductors, 2002, v. 36, n. 7, p. 832, doi. 10.1134/1.1493758

By:

Torkhov, N. A.;
Ivonin, I. V.;
Chernikov, E. V.

Publication type:

Article