Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 5

Results: 21

Control of Charge Transport Mode in the Schottky Barrier by δ-Doping: Calculation and Experiment for Al/GaAs.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 505, doi. 10.1134/1.1478540
By:
- Shashkin, V. I.;
- Murel, A. V.;
- Daniltsev, V. M.;
- Khrykin, O. I.
Publication type:
Article
Features of Determination of Shallow-Level Impurity Concentrations in Semiconductors from Analysis of the Exciton Luminescence Spectrum.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 487, doi. 10.1134/1.1478536
By:
- Glinchuk, K. D.;
- Prokhorovich, A. V.
Publication type:
Article
Deep Level Spectra of MBE-Grown ZnTe:Cr[sup 2+] Layers.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 493, doi. 10.1134/1.1478537
By:
- Sadofyev, Yu. G.;
- Korshkov, M. V.
Publication type:
Article
Band Structure of Mg[sub 2]Si and Mg[sub 2]Ge Semiconducting Compounds with a Strained Crystal Lattice.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 496, doi. 10.1134/1.1478538
By:
- Krivosheeva, A. V.;
- Kholod, A. N.;
- Shaposhnikov, V. L.;
- Krivosheev, A. E.;
- Borisenko, V. E.
Publication type:
Article
Localized States in Hg[sub 3]In[sub 2]Te[sub 6]: Cr Compounds.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 501, doi. 10.1134/1.1478539
By:
- Gorleı, P. N.;
- Grushka, O. G.;
- Frasunyak, V. M.
Publication type:
Article
Nonlinear Photoluminescence of Graded-Gap Al[sub x]Ga[sub 1 – ][sub x]As Solid Solutions.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 481, doi. 10.1134/1.1478535
By:
- Kovalenko, V. F.;
- Mironchenko, A. Yu.;
- Shutov, S. V.
Publication type:
Article
Electrons, Holes, and Excitons in a Superlattice Composed of Cylindrical Quantum Dots with Extremely Weak Coupling between Quasiparticles in Neighboring Layers of Quantum Dots.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 511, doi. 10.1134/1.1478541
By:
- Tkach, N. V.;
- Makhanets, A. M.;
- Zegrya, G. G.
Publication type:
Article
Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures in the Quantum Hall Effect Mode.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 519, doi. 10.1134/1.1478542
By:
- Arapov, Yu. G.;
- Kuznetsov, O. A.;
- Neverov, V. N.;
- Kharus, G. I.;
- Shelushinina, N. G.;
- Yakunin, M. V.
Publication type:
Article
Miniband Spectra of (AlAs)[sub M](GaAs)[sub N](111) Superlattices.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 527, doi. 10.1134/1.1478543
By:
- Karavaev, G. F.;
- Chernyshov, V. N.;
- Egunov, R. M.
Publication type:
Article
Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 535, doi. 10.1134/1.1478544
By:
- Burbaev, T. M.;
- Kazakov, I. P.;
- Kurbatov, V. A.;
- Rzaev, M. M.;
- Tsvetkov, V. A.;
- Tsekhosh, V. I.
Publication type:
Article
Resonance Tunneling and Nonlinear Current in Heterobarriers with Complex Law of Carrier Dispersion.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 539, doi. 10.1134/1.1478545
By:
- Kim, C. S.;
- Satanin, A. M.;
- Shtenberg, V. B.
Publication type:
Article
Multichannel Carrier Scattering at Quantum-Well Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 546, doi. 10.1134/1.1478546
By:
- Galiev, V. I.;
- Kruglov, A. N.;
- Polupanov, A. F.;
- Goldys, E. M.;
- Tansley, T. L.
Publication type:
Article
Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 552, doi. 10.1134/1.1478547
By:
- Karpovich, I. A.;
- Tikhov, S. V.;
- Shobolov, E. L.;
- Zvonkov, B. N.
Publication type:
Article
The Interrelation of Surface Relief of Porous Silicon with Specific Features of Raman Spectra.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 558, doi. 10.1134/1.1478548
By:
- Bulakh, B. M.;
- Jumayev, B. R.;
- Korsunska, N. O.;
- Litvin, O. S.;
- Torchynska, T. V.;
- Khomenkova, L. Yu.;
- Yukhymchuk, V. O.
Publication type:
Article
Formation of Macropore Nucleation Centers in Silicon by Ion Implantation.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 564, doi. 10.1134/1.1478549
By:
- Astrova, E. V.;
- Vasunkina, T. N.
Publication type:
Article
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
By:
- Galakhov, V. R.;
- Antonova, I. V.;
- Shamin, S. N.;
- Aksenova, V. I.;
- Obodnikov, V. I.;
- Gutakovskiı, A. K.;
- Popov, V. P.
Publication type:
Article
Preparation and Study of Carbidized Porous Silicon.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 574, doi. 10.1134/1.1478551
By:
- Sreseli, O. M.;
- Goryachev, D. N.;
- Osipov, V. Yu.;
- Belyakov, L. V.;
- Vul’, S. P.;
- Serenkov, I. T.;
- Sakharov, V. I.;
- Vul’, A. Ya.
Publication type:
Article
Shallow p–n Junctions Formed in Silicon Using Pulsed Photon Annealing.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 581
By:
- Şişianu, S. T.;
- Şişianu, T. S.;
- Railean, S. K.
Publication type:
Article
Simulation of Avalanche Multiplication of Electrons in Photodetectors with Blocked Hopping Conduction.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 588, doi. 10.1134/1.1478553
By:
- Sinitsa, S. P.
Publication type:
Article
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 592, doi. 10.1134/1.1478554
By:
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Kubat, P.;
- Tsivish, S.;
- Yakovlev, Yu. P.
Publication type:
Article
Generation of Microwave Oscillations in a No-Base Diode.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 599, doi. 10.1134/1.1478555
By:
- Darznek, S. A.;
- Lyubutin, S. K.;
- Rukin, S. N.;
- Slovikovskiı, B. G.
Publication type:
Article