Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 4
Results: 22
Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon.
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- Semiconductors, 2002, v. 36, n. 4, p. 367, doi. 10.1134/1.1469179
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Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects.
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- Semiconductors, 2002, v. 36, n. 4, p. 363, doi. 10.1134/1.1469178
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Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer.
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- Semiconductors, 2002, v. 36, n. 4, p. 370, doi. 10.1134/1.1469180
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Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt.
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- Semiconductors, 2002, v. 36, n. 4, p. 375, doi. 10.1134/1.1469181
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Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer.
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- Semiconductors, 2002, v. 36, n. 4, p. 379, doi. 10.1134/1.1469182
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Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers.
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- Semiconductors, 2002, v. 36, n. 4, p. 382, doi. 10.1134/1.1469183
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Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes.
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- Semiconductors, 2002, v. 36, n. 4, p. 385, doi. 10.1134/1.1469184
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Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte.
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- Semiconductors, 2002, v. 36, n. 4, p. 390, doi. 10.1134/1.1469185
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Energy Transfer of Ce[sup 3+]→Eu[sup 2+] in the CaGa[sub 2]S[sub 4] Compound.
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- Semiconductors, 2002, v. 36, n. 4, p. 394, doi. 10.1134/1.1469186
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Features of Optical Properties of Al[sub x]Ga[sub 1 – ][sub x]N Solid Solutions.
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- Semiconductors, 2002, v. 36, n. 4, p. 398, doi. 10.1134/1.1469187
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Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors.
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- Semiconductors, 2002, v. 36, n. 4, p. 404, doi. 10.1134/1.1469188
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Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method.
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- Semiconductors, 2002, v. 36, n. 4, p. 410, doi. 10.1134/1.1469189
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Causes of Variation in the Static Current–Voltage Characteristics of the Structures with the Me/n–n[sup +]-GaAs Schottky Barrier on Hydrogenation.
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- Semiconductors, 2002, v. 36, n. 4, p. 414, doi. 10.1134/1.1469190
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Field Effect in a System Consisting of Electrolyte and (TlBiSe[sub 2])[sub 1 – ][sub x]–(TlBiS[sub 2])[sub x] Solid Solution.
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- Semiconductors, 2002, v. 36, n. 4, p. 420, doi. 10.1134/1.1469191
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Effect of Surface on the Excitonic Characteristics of Semiconductors.
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- Semiconductors, 2002, v. 36, n. 4, p. 424, doi. 10.1134/1.1469192
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Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode.
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- Semiconductors, 2002, v. 36, n. 4, p. 430, doi. 10.1134/1.1469193
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Control of the Interband and Intersubband Transition Energy in Quantum Wells Using Localized Isoelectronic Perturbations.
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- Semiconductors, 2002, v. 36, n. 4, p. 434, doi. 10.1134/1.1469194
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Quantized Conductance in Silicon Quantum Wires.
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- Semiconductors, 2002, v. 36, n. 4, p. 439, doi. 10.1134/1.1469195
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Exciton Recombination in δ-Doped Type-II GaAs/AlAs Superlattices.
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- Semiconductors, 2002, v. 36, n. 4, p. 461, doi. 10.1134/1.1469196
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The Effect of Adsorption on the Electrical Properties of Structures Based on Oxidized Porous Silicon.
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- Semiconductors, 2002, v. 36, n. 4, p. 466, doi. 10.1134/1.1469197
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Special Features of Electron Drift in Submicrometer GaAs Structures.
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- Semiconductors, 2002, v. 36, n. 4, p. 472
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Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures.
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- Semiconductors, 2002, v. 36, n. 4, p. 476, doi. 10.1134/1.1469199
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