Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 4

Results: 22

Changes in the State of Phosphorus Atoms in the Silicon Lattice as a Result of Interaction with Radiation Defects.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 363, doi. 10.1134/1.1469178

By:

Bolotov, V. V.;
Kamaev, G. N.;
Smirnov, L. S.

Publication type:

Article

Ultrasonically Stimulated Low-Temperature Redistribution of Impurities in Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 367, doi. 10.1134/1.1469179

By:

Ostrovskiı, I. V.;
Nadtochiı, A. B.;
Podolyan, A. A.

Publication type:

Article

Simulation of Low-Temperature Arsenic Diffusion from a Heavily Doped Silicon Layer.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 370, doi. 10.1134/1.1469180

By:

Aleksandrov, O. V.

Publication type:

Article

Generalized Character of the Dielectric Response of CdTe Crystals Grown from the Melt.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 375, doi. 10.1134/1.1469181

By:

Klimenko, I. A.;
Migal’, V. P.

Publication type:

Article

Effect of the Radial Electric Field on Absorption in a Quantized Spherical Layer.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 379, doi. 10.1134/1.1469182

By:

Arutyunyan, V. A.

Publication type:

Article

Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 382, doi. 10.1134/1.1469183

By:

Andrievskiı, V. F.;
Gorelenok, A. T.;
Zagorel’skaya, N. A.;
Kamanin, A. V.;
Shmidt, N. M.

Publication type:

Article

Effective Electron Mass in Heavily Doped GaAs in the Ordering of Impurity Complexes.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 385, doi. 10.1134/1.1469184

By:

Bogdanova, V. A.;
Davletkil’deev, N. A.;
Semikolenova, N. A.;
Sidorov, E. N.

Publication type:

Article

Determination of the Matrix Element of the Quasi-Momentum Operator in the Zero-Gap Semiconductor HgSe by the Field-Effect Method in Electrolyte.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 390, doi. 10.1134/1.1469185

By:

Shevchenko, O. Yu.;
Radantsev, V. F.;
Yafyasov, A. M.;
Bozhevolnov, V. B.;
Ivankiv, I. M.;
Perepelkin, A. D.

Publication type:

Article

Energy Transfer of Ce[sup 3+]→Eu[sup 2+] in the CaGa[sub 2]S[sub 4] Compound.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 394, doi. 10.1134/1.1469186

By:

Dzhabbarov, R. B.

Publication type:

Article

Features of Optical Properties of Al[sub x]Ga[sub 1 – ][sub x]N Solid Solutions.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 398, doi. 10.1134/1.1469187

By:

Deıbuk, V. G.;
Voznyı, A. V.;
Sletov, M. M.

Publication type:

Article

Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 404, doi. 10.1134/1.1469188

By:

Gasan-zade, S. G.;
Strikha, M. V.;
Staryı, S. V.;
Shepel’skiı, G. A.;
Boıko, V. A.

Publication type:

Article

Analysis and Refinement of Mathematical Tools for Modified Time-of-Flight Method.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 410, doi. 10.1134/1.1469189

By:

Vikhrov, S. P.;
Vishnyakov, N. V.;
Maslov, A. A.;
Mishustin, V. G.

Publication type:

Article

Causes of Variation in the Static Current–Voltage Characteristics of the Structures with the Me/n–n[sup +]-GaAs Schottky Barrier on Hydrogenation.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 414, doi. 10.1134/1.1469190

By:

Torkhov, N. A.

Publication type:

Article

Field Effect in a System Consisting of Electrolyte and (TlBiSe[sub 2])[sub 1 – ][sub x]–(TlBiS[sub 2])[sub x] Solid Solution.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 420, doi. 10.1134/1.1469191

By:

Shevchenko, O. Yu.;
Yafyasov, A. M.;
Bozhevol’nov, V. B.;
Ivankiv, I. M.;
Perepelkin, A. D.

Publication type:

Article

Effect of Surface on the Excitonic Characteristics of Semiconductors.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 424, doi. 10.1134/1.1469192

By:

Litovchenko, V. G.;
Dmitruk, N. L.;
Korbutyak, D. V.;
Sarikov, A. V.

Publication type:

Article

Nature of the Edge Electroluminescence Peak in the Si:(Er,O) Diode Breakdown Mode.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 430, doi. 10.1134/1.1469193

By:

Emel’yanov, A. M.;
Nikolaev, Yu. A.;
Sobolev, N. A.

Publication type:

Article

Control of the Interband and Intersubband Transition Energy in Quantum Wells Using Localized Isoelectronic Perturbations.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 434, doi. 10.1134/1.1469194

By:

Durinyan, K.;
Zatikyan, A.;
Petrosyan, S.

Publication type:

Article

Quantized Conductance in Silicon Quantum Wires.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 439, doi. 10.1134/1.1469195

By:

Bagraev, N. T.;
Buravlev, A. D.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Gehlhoff, W.;
Ivanov, V. K.;
Shelykh, I. A.

Publication type:

Article

Exciton Recombination in δ-Doped Type-II GaAs/AlAs Superlattices.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 461, doi. 10.1134/1.1469196

By:

Zhuravlev, K. S.;
Sulaımanov, A. K.;
Gilinskiı, A. M.;
Braginskiı, L. S.;
Toropov, A. I.;
Bakarov, A. K.

Publication type:

Article

The Effect of Adsorption on the Electrical Properties of Structures Based on Oxidized Porous Silicon.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 466, doi. 10.1134/1.1469197

By:

Bilenko, D. I.;
Belobrovaya, O. Ya.;
Zharkova, É. A.;
Mysenko, I. B.;
Khasina, E. I.

Publication type:

Article

Special Features of Electron Drift in Submicrometer GaAs Structures.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 472

By:

Gergel’, V. A.;
Kul’kova, E. Yu.;
Mokerov, V. G.;
Timofeev, M. V.;
Khrenov, G. Yu.

Publication type:

Article

Long-Term Variation of Electrical and Photoelectric Characteristics of Pd–p-InP Diode Structures.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 476, doi. 10.1134/1.1469199

By:

Slobodchikov, S. V.;
Salikhov, Kh. M.;
Russu, E. V.

Publication type:

Article