On Stabilization of the Fermi Level in Ga-Doped PbTe-Based Alloys.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 34, doi. 10.1134/1.1434509
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2002 AND VI 36 AND IP 1
Results: 19
1
2
Formation of Silicon Nanocrystals with Preferred (100) Orientation in Amorphous Si:H Films Grown on Glass Substrates and Exposed to Nanosecond Pulses of Ultraviolet Radiation.
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- Semiconductors, 2002, v. 36, n. 1, p. 102, doi. 10.1134/1.1434522
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- Publication type:
- Article
3
Special Features of Hopping Conduction in p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals under Conditions of Dual Doping.
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- Semiconductors, 2002, v. 36, n. 1, p. 26, doi. 10.1134/1.1434508
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- Publication type:
- Article
4
Effect of Boron Dopant on the Photoconductivity of Microcrystalline Hydrogenated Silicon Films.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 38, doi. 10.1134/1.1434510
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- Publication type:
- Article
5
Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN.
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- Semiconductors, 2002, v. 36, n. 1, p. 41, doi. 10.1134/1.1434511
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- Publication type:
- Article
6
Optical Absorption by Transitions between Subbands of Light and Heavy Holes in p-Mn[sub x]Hg[sub 1 – ][sub x]Te.
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- Semiconductors, 2002, v. 36, n. 1, p. 45, doi. 10.1134/1.1434512
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- Publication type:
- Article
7
Density of States in Amorphous Carbon and Its Modification by Annealing.
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- Semiconductors, 2002, v. 36, n. 1, p. 110, doi. 10.1134/1.1434819
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- Publication type:
- Article
8
A Graded-Gap Detector of Ionizing Radiation.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 116
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- Publication type:
- Article
9
Hopping Conduction via Strongly Localized Impurity States of Indium in PbTe and Its Solid Solutions.
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- Semiconductors, 2002, v. 36, n. 1, p. 1, doi. 10.1134/1.1434506
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- Publication type:
- Article
10
Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen.
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- Semiconductors, 2002, v. 36, n. 1, p. 21, doi. 10.1134/1.1434507
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- Publication type:
- Article
11
A Combined Technique for Studying the Multicomponent Spectra of Photoreflection from Semiconductors.
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- Semiconductors, 2002, v. 36, n. 1, p. 48, doi. 10.1134/1.1434513
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- Publication type:
- Article
12
Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere.
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- Semiconductors, 2002, v. 36, n. 1, p. 60, doi. 10.1134/1.1434515
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- Publication type:
- Article
13
Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of <II–VI>/GaAs.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 54, doi. 10.1134/1.1434514
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- Publication type:
- Article
14
Spontaneous Spin Polarization of Electrons in Quantum Wires.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 65, doi. 10.1134/1.1434516
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- Publication type:
- Article
15
Changes in the Density of Nonradiative Recombination Centers in GaAs/AlGaAs Quantum-Well Structures as a Result of Treatment in CF[sub 4] Plasma.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 81, doi. 10.1134/1.1434518
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- Publication type:
- Article
16
Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 74, doi. 10.1134/1.1434517
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- Publication type:
- Article
17
Charge Effects Controlling the Current Hysteresis and Negative Differential Resistance in Periodic Nanodimensional Structures Si/CaF[sub 2].
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 85, doi. 10.1134/1.1434519
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- Publication type:
- Article
18
Spin Relaxation in Asymmetrical Heterostructures.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 91, doi. 10.1134/1.1434520
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- Publication type:
- Article
19
A Mechanism of Oxygen-Induced Passivation of Porous Silicon in the HF : HCl : C[sub 2]H[sub 5]OH Solutions.
- Published in:
- Semiconductors, 2002, v. 36, n. 1, p. 98, doi. 10.1134/1.1434521
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- Publication type:
- Article