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Results: 19

Formation of Silicon Nanocrystals with Preferred (100) Orientation in Amorphous Si:H Films Grown on Glass Substrates and Exposed to Nanosecond Pulses of Ultraviolet Radiation.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 102, doi. 10.1134/1.1434522
By:
- Efremov, M. D.;
- Bolotov, V. V.;
- Volodin, V. A.;
- Kochubeı, S. A.;
- Kretinin, A. V.
Publication type:
Article
On Stabilization of the Fermi Level in Ga-Doped PbTe-Based Alloys.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 34, doi. 10.1134/1.1434509
By:
- Skipetrov, E. P.;
- Zvereva, E. A.;
- Skipetrova, L. A.;
- Volkova, O. S.;
- Slyn’ko, E. I.
Publication type:
Article
A Graded-Gap Detector of Ionizing Radiation.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 116
By:
- Pozela, J.;
- Pozela, K.;
- Silėnas, A.;
- Jasutis, V.;
- Dapkus, L.;
- Kinduris, A.;
- Jucienė, V.
Publication type:
Article
Hopping Conduction via Strongly Localized Impurity States of Indium in PbTe and Its Solid Solutions.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 1, doi. 10.1134/1.1434506
By:
- Ravich, Yu. I.;
- Nemov, S. A.
Publication type:
Article
Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 21, doi. 10.1134/1.1434507
By:
- Aleksandrov, O. V.
Publication type:
Article
Special Features of Hopping Conduction in p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals under Conditions of Dual Doping.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 26, doi. 10.1134/1.1434508
By:
- Bogoboyashchiı, V. V.
Publication type:
Article
Density of States in Amorphous Carbon and Its Modification by Annealing.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 110, doi. 10.1134/1.1434819
By:
- Ivanov-Omskiı, V. I.;
- Tagliaferro, A.;
- Fanchini, G.;
- Yastrebov, S. G.
Publication type:
Article
Effect of Boron Dopant on the Photoconductivity of Microcrystalline Hydrogenated Silicon Films.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 38, doi. 10.1134/1.1434510
By:
- Kazanskiı, A. G.;
- Mell, H.;
- Terukov, E. I.;
- Forsh, P. A.
Publication type:
Article
Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 41, doi. 10.1134/1.1434511
By:
- Davydov, S. Yu.
Publication type:
Article
Optical Absorption by Transitions between Subbands of Light and Heavy Holes in p-Mn[sub x]Hg[sub 1 – ][sub x]Te.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 45, doi. 10.1134/1.1434512
By:
- Nesmelova, I. M.;
- Baryshev, N. S.;
- Andreev, V. A.
Publication type:
Article
A Combined Technique for Studying the Multicomponent Spectra of Photoreflection from Semiconductors.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 48, doi. 10.1134/1.1434513
By:
- Kuz’menko, R. V.;
- Ganzha, A. V.;
- Domashevskaya, É. P.
Publication type:
Article
Changes in the Density of Nonradiative Recombination Centers in GaAs/AlGaAs Quantum-Well Structures as a Result of Treatment in CF[sub 4] Plasma.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 81, doi. 10.1134/1.1434518
By:
- Shamirzaev, T. S.;
- Sokolov, A. L.;
- Zhuravlev, K. S.;
- Kobitski, A. Yu.;
- Wagner, H. P.;
- Zahn, D. R. T.
Publication type:
Article
Sulfide Passivating Coatings on GaAs(100) Surface under Conditions of MBE Growth of <II–VI>/GaAs.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 54, doi. 10.1134/1.1434514
By:
- Sedova, I. V.;
- L’vova, T. V.;
- Ulin, V. P.;
- Sorokin, S. V.;
- Ankudinov, A. V.;
- Berkovits, V. L.;
- Ivanov, S. V.;
- Kop’ev, P. S.
Publication type:
Article
Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 74, doi. 10.1134/1.1434517
By:
- Evtikhiev, V. P.;
- Konstantinov, O. V.;
- Matveentsev, A. V.;
- Romanov, A. E.
Publication type:
Article
Spin Relaxation in Asymmetrical Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 91, doi. 10.1134/1.1434520
By:
- Averkiev, N. S.;
- Golub, L. E.;
- Willander, M.
Publication type:
Article
Transformation of Interface States in Silicon-on-Insulator Structures under Annealing in Hydrogen Atmosphere.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 60, doi. 10.1134/1.1434515
By:
- Antonova, I. V.;
- Stano, I.;
- Nikolaev, D. V.;
- Naumova, O. V.;
- Popov, V. P.;
- Skuratov, V. A.
Publication type:
Article
Spontaneous Spin Polarization of Electrons in Quantum Wires.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 65, doi. 10.1134/1.1434516
By:
- Shelykh, I. A.;
- Bagraev, N. T.;
- Ivanov, V. K.;
- Klyachkin, L. E.
Publication type:
Article
Charge Effects Controlling the Current Hysteresis and Negative Differential Resistance in Periodic Nanodimensional Structures Si/CaF[sub 2].
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 85, doi. 10.1134/1.1434519
By:
- Berashevich, Yu. A.;
- Danilyuk, A. L.;
- Kholod, A. N.;
- Borisenko, V. E.
Publication type:
Article
A Mechanism of Oxygen-Induced Passivation of Porous Silicon in the HF : HCl : C[sub 2]H[sub 5]OH Solutions.
Published in:
Semiconductors, 2002, v. 36, n. 1, p. 98, doi. 10.1134/1.1434521
By:
- Gavrilov, S. A.;
- Belogorokhov, A. I.;
- Belogorokhova, L. I.
Publication type:
Article