Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 10

Results: 22

Some Aspects of SiC CVD Epitaxy.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1117, doi. 10.1134/1.1410646

By:

Zelenin, V. V.;
Korogodskiı, M. L.;
Lebedev, A. A.

Publication type:

Article

Analysis of the Temperature Dependence of Electron Concentration in CdGeAs[sub 2] Single Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1123, doi. 10.1134/1.1410648

By:

Borisenko, S. I.

Publication type:

Article

Specific Features of the Liquid-Phase Epitaxial Growth of SiC Epilayers in Vacuum.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1132, doi. 10.1134/1.1410650

By:

Bauman, D. A.;
Gavrilin, A. V.;
Ivantsov, V. A.;
Morozov, A. M.;
Kuznetsov, N. I.

Publication type:

Article

Density of Localized States in (Pb[sub 0.78]Sn[sub 0.22])[sub 0.95]In[sub 0.05]Te Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1144, doi. 10.1134/1.1410653

By:

Nemov, S. A.;
Potapova, D. A.;
Ravich, Yu. I.;
Khanin, S. D.

Publication type:

Article

The Effect of CVD Growth Conditions of 6H-SiC Epilayers on Al Incorporation.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1120, doi. 10.1134/1.1410647

By:

Zelenin, V. V.;
Korogodskiı, M. L.;
Lebedev, A. A.

Publication type:

Article

Nonlinear and Dynamic Properties of Charge Transport in Polycrystalline Silicon under Optical Illumination.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1126, doi. 10.1134/1.1410649

By:

Doshchanov, K. M.

Publication type:

Article

Electrical and Photoelectric Properties of Polycrystalline Textured CdTe.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1139, doi. 10.1134/1.1410652

By:

Klevkov, Yu. V.;
Kolosov, S. A.;
Medvedev, S. A.;
Plotnikov, A. F.

Publication type:

Article

Random Potential Relief and Extrinsic Photoconductivity of Compensated Germanium.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1151, doi. 10.1134/1.1410655

By:

Druzhinin, Yu. P.;
Chirkova, E. G.

Publication type:

Article

Nonadditive Photoconductivity and Induced States in Zinc Selenide Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1135

By:

Migal’, V. P.

Publication type:

Article

Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1155, doi. 10.1134/1.1410656

By:

Penin, N. A.

Publication type:

Article

Interference of Polarized Beams near the Isotropic Point of the CdS Crystal.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1147, doi. 10.1134/1.1410654

By:

Brovchenko, I. V.;
Romanenko, V. I.;
Tovstenko, V. I.

Publication type:

Article

Thermoelectric Figure of Merit of a p–n Junction.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1161, doi. 10.1134/1.1410657

By:

Ravich, Yu. I.;
Pshenaı-Severin, D. A.

Publication type:

Article

The Influence of the Illumination Direction on the Field Distribution in High-Resistivity Metal–Semiconductor Structures.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1166, doi. 10.1134/1.1410658

By:

Reznikov, B. I.

Publication type:

Article

Effect of the Annealing Temperature on Erbium Ion Electroluminescence in Si:(Er,O) Diodes with (111) Substrate Orientation.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1171, doi. 10.1134/1.1410659

By:

Sobolev, N. A.;
Emel’yanov, A. M.;
Nikolaev, Yu. A.

Publication type:

Article

Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1175, doi. 10.1134/1.1410660

By:

Sobolev, M. M.;
Kochnev, I. V.;
Lantratov, V. M.;
Ledentsov, N. N.

Publication type:

Article

The Role of Nitrogen in the Formation of Luminescent Silicon Nanoprecipitates during Heat Treatment of SiO[sub 2] Layers Implanted with Si[sup +] ions.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1182, doi. 10.1134/1.1410661

By:

Kachurin, G. A.;
Yanovskaya, S. G.;
Zhuravlev, K. S.;
Ruault, M.-O.

Publication type:

Article

Special Features of Photoelectric Properties of Nanostructured Films of Hydrogenated Silicon.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1187, doi. 10.1134/1.1410662

By:

Golikova, O. A.;
Kazanin, M. M.

Publication type:

Article

Numerical Calculation of the Temperature Dependences of Photoconductivity in the p-type a-Si:H.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1191, doi. 10.1134/1.1410663

By:

Kuznetsov, S. V.

Publication type:

Article

Effect of Doping with Nitrogen on Electrical Properties and Erbium Electroluminescence of a-Si:H(Er) Films.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1197, doi. 10.1134/1.1410664

By:

Kon’kov, O. I.;
Terukov, E. I.;
Granitsyna, L. S.

Publication type:

Article

Difference Mode Generation in Injection Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1203, doi. 10.1134/1.1410665

By:

Aleshkin, V. Ya.;
Afonenko, A. A.;
Zvonkov, N. B.

Publication type:

Article

High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3μm).

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1208, doi. 10.1134/1.1410666

By:

Aydaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Fabry–Perot a-Si:H/a-SiO[sub x]:H Microcavities with an Erbium-Doped a-Si:H Active Layer.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1213, doi. 10.1134/1.1410667

By:

Golubev, V. G.;
Dukin, A. A.;
Medvedev, A. V.;
Pevtsov, A. B.;
Sel’kin, A. V.;
Feoktistov, N. A.

Publication type:

Article