Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 9
Results: 19
Diffusion of Cu over a Clean Si(111) Surface.
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- Semiconductors, 2001, v. 35, n. 9, p. 1018, doi. 10.1134/1.1403565
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Oxidation of Semiconductors and the Constitution of Interfaces.
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- Semiconductors, 2001, v. 35, n. 9, p. 1006, doi. 10.1134/1.1403564
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The Simulation of Epitaxy, Sublimation, and Annealing Processes in a 3D Silicon Surface Layer.
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- Semiconductors, 2001, v. 35, n. 9, p. 1022, doi. 10.1134/1.1403566
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Properties of Silicon-on-Insulator Structures and Devices.
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- Semiconductors, 2001, v. 35, n. 9, p. 1030, doi. 10.1134/1.1403567
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Insitu Study of the Interaction of Oxygen with the Si(111) Surface by Ultrahigh-Vacuum Reflection Electron Microscopy.
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- Semiconductors, 2001, v. 35, n. 9, p. 1038, doi. 10.1134/1.1403568
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Molecular-Beam Epitaxy of Mercury–Cadmium–Telluride Solid Solutions on Alternative Substrates.
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- Semiconductors, 2001, v. 35, n. 9, p. 1045, doi. 10.1134/1.1403569
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- Article
Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers.
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- Semiconductors, 2001, v. 35, n. 9, p. 1054, doi. 10.1134/1.1403570
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Electronic Properties of InAs-Based Metal–Insulator–Semiconductor (MIS) Structures.
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- Semiconductors, 2001, v. 35, n. 9, p. 1063, doi. 10.1134/1.1403571
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Recombination of Point Defects and Their Interaction with the Surface in the Course of the Clusterization of these Defects in Si.
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- Semiconductors, 2001, v. 35, n. 9, p. 1072, doi. 10.1134/1.1403572
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Spin Response of 2D Electrons to a Lateral Electric Field.
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- Semiconductors, 2001, v. 35, n. 9, p. 1081, doi. 10.1134/1.1403573
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Germanium Quantum Dots in an Unstrained GaAs/ZnSe/Ge/ZnSe Heterosystem.
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- Semiconductors, 2001, v. 35, n. 9, p. 1088, doi. 10.1134/1.1403574
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Type-II Ge/Si Quantum Dots.
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- Semiconductors, 2001, v. 35, n. 9, p. 1095, doi. 10.1134/1.1403575
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Switching Characteristics of Electron-Irradiated MOS-Controlled Thyristors.
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- Semiconductors, 2001, v. 35, n. 9, p. 1106, doi. 10.1134/1.1403576
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Arrays of 128×128 Photodetectors Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2001, v. 35, n. 9, p. 1110, doi. 10.1134/1.1403577
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A Scientist, a Mentor, a Soldier.
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- Semiconductors, 2001, v. 35, n. 9, p. 981, doi. 10.1134/1.1403559
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Atomic Processes in Semiconductor Crystals.
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- Semiconductors, 2001, v. 35, n. 9, p. 985, doi. 10.1134/1.1403560
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Investigation of Ge Film Growth on the Si(100) Surface by Recording Diffractometry.
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- Semiconductors, 2001, v. 35, n. 9, p. 988, doi. 10.1134/1.1403561
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A Study of Galvanomagnetic Phenomena in MBE-Grown n-Cd[sub x]Hg[sub 1 – ][sub x]Te Films.
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- Semiconductors, 2001, v. 35, n. 9, p. 992, doi. 10.1134/1.1403562
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Numerical Simulation of Intrinsic Defects in SiO[sub 2] and Si[sub 3]N[sub 4].
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- Semiconductors, 2001, v. 35, n. 9, p. 997, doi. 10.1134/1.1403563
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