Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 8
Results: 25
Growth of Fractal Lithium Clusters in Germanium.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 861, doi. 10.1134/1.1393015
- By:
- Publication type:
- Article
Vibration Modes of Oxygen Dimers in Germanium.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 864, doi. 10.1134/1.1393016
- By:
- Publication type:
- Article
Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe[sub 2] Crystals.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 870, doi. 10.1134/1.1393017
- By:
- Publication type:
- Article
The Onset of Double Limiting Cycle in the Impurity-Assisted Electric Breakdown of a Compensated Semiconductor with a Shorted Hall Voltage.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 873, doi. 10.1134/1.1393018
- By:
- Publication type:
- Article
Preparation and Properties of Isotopically Pure Polycrystalline Silicon.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 877, doi. 10.1134/1.1393019
- By:
- Publication type:
- Article
Electrical Properties of Cd[sub x]Hg[sub 1 – ][sub x]Te/CdZnTe Heterostructures.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 880, doi. 10.1134/1.1393020
- By:
- Publication type:
- Article
Native and Impurity Defects in ZnSe:In Single Crystals Prepared by Free Growth.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 883, doi. 10.1134/1.1393021
- By:
- Publication type:
- Article
Origin of an Absorption Band Peaked at 5560cm[sup –1] and Related to Divacancies in Si[sub 1 – ][sub x]Ge[sub x].
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 890, doi. 10.1134/1.1393022
- By:
- Publication type:
- Article
Photoluminescence Kinetics in GaAs under the Influence of Surface Acoustic Waves.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 895, doi. 10.1134/1.1393023
- By:
- Publication type:
- Article
Optical Band Gap of Cd[sub 1 – ][sub x]Mn[sub x]Te and Zn[sub 1 – ][sub x]Mn[sub x]Te Semiconductors.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 900, doi. 10.1134/1.1393024
- By:
- Publication type:
- Article
The Role of Lead in Growing Ga[sub 1 – ][sub X]In[sub X]As[sub Y]Sb[sub 1 – ][sub Y] Solid Solutions by Liquid-Phase Epitaxy.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 904, doi. 10.1134/1.1393025
- By:
- Publication type:
- Article
Interface States and Deep-Level Centers in Silicon-on-Insulator Structures.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 912, doi. 10.1134/1.1393026
- By:
- Publication type:
- Article
Simultaneous Doping of Silicon Layers with Erbium and Oxygen in the Course of Molecular-Beam Epitaxy.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 918, doi. 10.1134/1.1393027
- By:
- Publication type:
- Article
Pulsed Laser-Stimulated Surface Acoustic Waves in p-CdTe Crystals.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 924, doi. 10.1134/1.1393028
- By:
- Publication type:
- Article
Analysis of Inherent Potential Nonuniformities at the Extrinsic-Semiconductor Surface.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 927, doi. 10.1134/1.1393029
- By:
- Publication type:
- Article
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 932, doi. 10.1134/1.1393030
- By:
- Publication type:
- Article
Optical Properties of Germanium Monolayers on Silicon.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 941, doi. 10.1134/1.1393031
- By:
- Publication type:
- Article
The Effect of External Factors on Photoelectric Parameters of Amorphous Hydrogenated Silicon in Relation to the Initial Characteristics of the Films.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 947, doi. 10.1134/1.1393032
- By:
- Publication type:
- Article
Anomalous Polarization of Raman Scattering by Transverse and Longitudinal Phonons in Porous Doped GaAs.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 949, doi. 10.1134/1.1393033
- By:
- Publication type:
- Article
Effect of Temperature on Photoconductivity and Its Decay in Microcrystalline Silicon.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 953, doi. 10.1134/1.1393034
- By:
- Publication type:
- Article
X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 956, doi. 10.1134/1.1393035
- By:
- Publication type:
- Article
Threshold Characteristics of λ = 1.55μm InGaAsP/InP Heterolasers.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 962, doi. 10.1134/1.1393036
- By:
- Publication type:
- Article
An Ionization-Type Si:S-Based Semiconductor Converter of Infrared Images with Sensitivity in the Spectral Range of CO[sub 2]-Laser Radiation.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 970, doi. 10.1134/1.1393037
- By:
- Publication type:
- Article
A Study of Technological Processes in the Production of High-Power High-Voltage Bipolar Transistors Incorporating an Array of Inclusions in the Collector Region.
- Published in:
- Semiconductors, 2001, v. 35, n. 8, p. 974, doi. 10.1134/1.1393038
- By:
- Publication type:
- Article
Erratum: “Carrier Photoexcitation from Levels in Quantum Dots to States of the Continuum in Lasing” [Semiconductors35 (3), 343 (2001)].
- Published in:
- 2001
- By:
- Publication type:
- Correction Notice