Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 7
Results: 17
Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles.
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- Semiconductors, 2001, v. 35, n. 7, p. 735, doi. 10.1134/1.1385708
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- Article
The Microstructure and Physical Properties of Thin SnO[sub 2] Films.
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- Semiconductors, 2001, v. 35, n. 7, p. 762, doi. 10.1134/1.1385709
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- Article
The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance–Voltage Characteristics Measured during Electrochemical Etching.
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- Semiconductors, 2001, v. 35, n. 7, p. 766, doi. 10.1134/1.1385710
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- Article
Optical Properties of Cd[sub 1 – ][sub x]Zn[sub x]Te (0 < x < 0.1) Single Crystals in the Infrared Spectral Region.
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- Semiconductors, 2001, v. 35, n. 7, p. 773, doi. 10.1134/1.1385711
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- Article
Metallic Conductivity over an Acceptor Band of Lightly Compensated Copper-Doped p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals.
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- Semiconductors, 2001, v. 35, n. 7, p. 777, doi. 10.1134/1.1385712
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- Article
Fermi Level Pinning and Electrical Properties of Irradiated Cd[sub x]Hg[sub 1 – ][sub x]Te Alloys.
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- Semiconductors, 2001, v. 35, n. 7, p. 784, doi. 10.1134/1.1385713
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- Article
Effect of Ballistic Electron Transport in Metal–n-GaAs–n[sup +]-GaAs Schottky-Barrier Structures.
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- Semiconductors, 2001, v. 35, n. 7, p. 788, doi. 10.1134/1.1385714
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Calculation of the Variation in the Work Function Caused by Adsorption of Metal Atoms on Semiconductors.
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- Semiconductors, 2001, v. 35, n. 7, p. 796, doi. 10.1134/1.1385715
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- Article
Charge Transport in HgCdTe-based n[sup +]–p Photodiodes.
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- Semiconductors, 2001, v. 35, n. 7, p. 800, doi. 10.1134/1.1385716
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- Article
Electronic State Mixing in X[sub x] and X[sub y] Valleys in AlAs/GaAs (001).
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- Semiconductors, 2001, v. 35, n. 7, p. 807, doi. 10.1134/1.1385717
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- Article
Adsorption-based Porosimetry Using Capacitance Measurements.
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- Semiconductors, 2001, v. 35, n. 7, p. 816, doi. 10.1134/1.1385718
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- Article
Structural Transformations and Silicon Nanocrystallite Formation in SiO[sub x] Films.
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- Semiconductors, 2001, v. 35, n. 7, p. 821
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- Article
Luminescence Spectra and Efficiency of GaN-based Quantum-Well Heterostructure Light Emitting Diodes: Current and Voltage Dependence.
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- Semiconductors, 2001, v. 35, n. 7, p. 827, doi. 10.1134/1.1385720
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- Article
Interaction of Metal Nanoparticles with a Semiconductor in Surface-Doped Gas Sensors.
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- Semiconductors, 2001, v. 35, n. 7, p. 835, doi. 10.1134/1.1385721
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- Article
Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes.
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- Semiconductors, 2001, v. 35, n. 7, p. 840, doi. 10.1134/1.1385722
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- Article
Comparative Analysis of Long-Wavelength (1.3μm) VCSELs on GaAs Substrates.
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- Semiconductors, 2001, v. 35, n. 7, p. 847, doi. 10.1134/1.1385723
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- Article
1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them.
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- Semiconductors, 2001, v. 35, n. 7, p. 854, doi. 10.1134/1.1385724
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- Article