Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleEffect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.AuthorsLysenko, V. S.; Tyagulskiı, I. P.; Osiyuk, I. N.; Nazarov, A. N.; Vovk, Ya. N.; Gomenyuk, Yu. V.; Terukov, E. I.; Kon’kov, O. I.AbstractElectrical properties and characteristics of defects in the upper part of the band in Er-doped a-Si:H grown by plasma-enhanced chemical vapor deposition were studied for the first time.SubjectsERBIUM; SILICON compounds; PLASMA-enhanced chemical vapor depositionPublicationSemiconductors, 2001, Vol 35, Issue 6, p621ISSN1063-7826Publication typeAcademic JournalDOI10.1134/1.1379390