Title: Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.
Authors: Lysenko, V. S.; Tyagulskiı, I. P.; Osiyuk, I. N.; Nazarov, A. N.; Vovk, Ya. N.; Gomenyuk, Yu. V.; Terukov, E. I.; Kon’kov, O. I.
Abstract: Electrical properties and characteristics of defects in the upper part of the band in Er-doped a-Si:H grown by plasma-enhanced chemical vapor deposition were studied for the first time.
Subjects: ERBIUM; SILICON compounds; PLASMA-enhanced chemical vapor deposition
Publication: Semiconductors, 2001, Vol 35, Issue 6, p621
ISSN: 1063-7826
Publication type: Academic Journal
DOI: 10.1134/1.1379390

Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Lysenko, V. S.; Tyagulskiı, I. P.; Osiyuk, I. N.; Nazarov, A. N.; Vovk, Ya. N.; Gomenyuk, Yu. V.; Terukov, E. I.; Kon’kov, O. I.