Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 2

Results: 25

Mechanism of Reverse Current in the Al/p-InP Schottky Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 181, doi. 10.1134/1.1349928

By:

Pipinys, P. A.;
Rimeika, A. K.;
Lapeika, V. A.;
Pipiniene, A. V.

Publication type:

Article

Quasi-Static Ion Currents in Thin Insulating Films of Metal–Insulator–Semiconductor Structures and the Distribution of Ions in the Films.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 185, doi. 10.1134/1.1349929

By:

Dmitriev, S. G.;
Markin, Yu. V.

Publication type:

Article

The Effect of High-Temperature Epitaxial SiC Layer Growth on the Structure of Porous Silicon Carbide.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 153, doi. 10.1134/1.1349922

By:

Savkina, N. S.;
Ratnikov, V. V.;
Shuman, V. B.

Publication type:

Article

Investigation of a Change in the Chemical Composition of the Surface of Cd[sub x]Hg[sub 1 – ][sub x]Te Samples as a Result of Treatment by N[sub 2]O and H[sub 2] Gases Activated in a High-Frequency Discharge.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 196

By:

Vasil’ev, V. V.;
Zakhar’yash, T. I.;
Kesler, V. G.;
Parm, I. O.;
Solov’ev, A. P.

Publication type:

Article

Electrical Conductivity of n-InSb Films in Strong Electric Fields.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 175, doi. 10.1134/1.1349926

By:

Nikol’skiı, Yu. A.;
Zyuzin, S. E.

Publication type:

Article

Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916

By:

Tyschenko, I. E.;
Zhuravlev, K. S.;
Vandyshev, E. N.;
Misiuk, A.;
Yankov, R. A.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 132, doi. 10.1134/1.1349917

By:

Abramov, A. A.;
Tulupenko, V. N.;
Firsov, D. A.

Publication type:

Article

The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse of Cd[sub 1 – ][sub x]Zn[sub x]Te Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 135, doi. 10.1134/1.1349918

By:

Klimenko, I. A.;
Komar’, V. K.;
Migal’, V. P.;
Nalivaıko, D. P.

Publication type:

Article

Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe[sub 1 – ][sub y]S[sub y]:Ni and Zn[sub 1 – ][sub x]Cd[sub x]Se:Ni Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 138, doi. 10.1134/1.1349919

By:

Sokolov, V. I.;
Starovoıtova, V. N.

Publication type:

Article

The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 144, doi. 10.1134/1.1349920

By:

Georgobiani, A. N.;
Gruzintsev, A. N.;
Aminov, U. A.;
Vorob’ev, M. O.;
Khodos, I. I.

Publication type:

Article

Reflection Spectra of Doped Bismuth–Antimony Crystals in the Far-Infrared Region of the Spectrum.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 149, doi. 10.1134/1.1349921

By:

Grabov, V. M.;
Stepanov, N. P.

Publication type:

Article

Surface Gettering of Background Impurities and Defects in GaAs Wafers.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 177, doi. 10.1134/1.1349927

By:

Vlasenko, L. S.;
Gorelenok, A. T.;
Emtsev, V. V.;
Kamanin, A. V.;
Poloskin, D. S.;
Shmidt, N. M.

Publication type:

Article

Hopping Transport in Doped (Pb[sub 0.78]Sn[sub 0.22])[sub 1 – ][sub x]In[sub x]Te Solid Solutions.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 158, doi. 10.1134/1.1349923

By:

Ravich, Yu. I.;
Nemov, S. A.

Publication type:

Article

The Spread of Cross Section for Electron Capture by a Trap with a Discrete Energy Level in γ-La[sub 2]S[sub 3] Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 164, doi. 10.1134/1.1349924

By:

Zobov, E. M.;
Rizakhanov, M. A.

Publication type:

Article

Photoluminescence of Cu[sub Ga]Te[sub As] and Cu[sub Ga]Sn[sub Ga] Complexes in n-GaAs under Resonance Polarized Excitation.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 170, doi. 10.1134/1.1349925

By:

Averkiev, N. S.;
Gutkin, A. A.;
Sedov, V. E.

Publication type:

Article

Simulation of Hysteresis in a Metal–Ferroelectric–Semiconductor Structure.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 193, doi. 10.1134/1.1349930

By:

Berman, L. S.

Publication type:

Article

Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 199, doi. 10.1134/1.1349932

By:

Khanin, Yu. N.;
Novoselov, K. S.;
Vdovin, E. E.

Publication type:

Article

Spectra of the Field and Current Oscillations in Superlattices Exposed to Terahertz Laser Radiation.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 204, doi. 10.1134/1.1349933

By:

Romanov, Yu. A.;
Romanova, Yu. Yu.

Publication type:

Article

Investigation of the SiC/(SiC)[sub 1 – ][sub x](AlN)[sub x] Heterostructures by the Method of Capacitance–Voltage Characteristics.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 209, doi. 10.1134/1.1349934

By:

Kurbanov, M. K.;
Bilalov, B. A.;
Nurmagomedov, Sh. A.;
Safaraliev, G. K.

Publication type:

Article

Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 220, doi. 10.1134/1.1349936

By:

Ivanov-Omskiı, V. I.;
Tolmatchev, A. V.;
Yastrebov, S. G.

Publication type:

Article

Electron Localization and Bloch Oscillations in Quantum-Dot Superlattices under a Constant Electric Field.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 212, doi. 10.1134/1.1349935

By:

Dmitriev, I. A.;
Suris, R. A.

Publication type:

Article

Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 230, doi. 10.1134/1.1349938

By:

Zvonareva, T. K.;
Ivanov-Omskiı, V. I.;
Yastrebov, S. G.;
Golubok, A. O.;
Gorbenko, O. M.;
Rozanov, V. V.

Publication type:

Article

Contrast Enhancement in Image Transfer via Interaction of UV Radiation with Inorganic Photoresist Films.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 226, doi. 10.1134/1.1349937

By:

Kaliteevskaya, N. A.;
Seısyan, R. P.

Publication type:

Article

Optical Study of InP Quantum Dots.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 235, doi. 10.1134/1.1349939

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Nikolaev, D. N.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 238, doi. 10.1134/1.1349940

By:

Volokobinskiı, M. Yu.;
Komarov, I. N.;
Matyukhina, T. V.;
Reshetnikov, V. I.;
Rush, A. A.;
Falina, I. V.;
Yastrebov, A. S.

Publication type:

Article