Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 2
Results: 25
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
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- Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
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- Article
Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge.
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- Semiconductors, 2001, v. 35, n. 2, p. 132, doi. 10.1134/1.1349917
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- Article
The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse of Cd[sub 1 – ][sub x]Zn[sub x]Te Crystals.
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- Semiconductors, 2001, v. 35, n. 2, p. 135, doi. 10.1134/1.1349918
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Nickel Impurity Excitons and Photoinduced Lattice Distortion in ZnSe[sub 1 – ][sub y]S[sub y]:Ni and Zn[sub 1 – ][sub x]Cd[sub x]Se:Ni Solid Solutions.
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- Semiconductors, 2001, v. 35, n. 2, p. 138, doi. 10.1134/1.1349919
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- Article
The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma.
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- Semiconductors, 2001, v. 35, n. 2, p. 144, doi. 10.1134/1.1349920
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Reflection Spectra of Doped Bismuth–Antimony Crystals in the Far-Infrared Region of the Spectrum.
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- Semiconductors, 2001, v. 35, n. 2, p. 149, doi. 10.1134/1.1349921
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- Article
The Effect of High-Temperature Epitaxial SiC Layer Growth on the Structure of Porous Silicon Carbide.
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- Semiconductors, 2001, v. 35, n. 2, p. 153, doi. 10.1134/1.1349922
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- Article
Hopping Transport in Doped (Pb[sub 0.78]Sn[sub 0.22])[sub 1 – ][sub x]In[sub x]Te Solid Solutions.
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- Semiconductors, 2001, v. 35, n. 2, p. 158, doi. 10.1134/1.1349923
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- Article
The Spread of Cross Section for Electron Capture by a Trap with a Discrete Energy Level in γ-La[sub 2]S[sub 3] Crystals.
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- Semiconductors, 2001, v. 35, n. 2, p. 164, doi. 10.1134/1.1349924
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- Article
Photoluminescence of Cu[sub Ga]Te[sub As] and Cu[sub Ga]Sn[sub Ga] Complexes in n-GaAs under Resonance Polarized Excitation.
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- Semiconductors, 2001, v. 35, n. 2, p. 170, doi. 10.1134/1.1349925
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- Article
Electrical Conductivity of n-InSb Films in Strong Electric Fields.
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- Semiconductors, 2001, v. 35, n. 2, p. 175, doi. 10.1134/1.1349926
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- Article
Surface Gettering of Background Impurities and Defects in GaAs Wafers.
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- Semiconductors, 2001, v. 35, n. 2, p. 177, doi. 10.1134/1.1349927
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- Article
Mechanism of Reverse Current in the Al/p-InP Schottky Diodes.
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- Semiconductors, 2001, v. 35, n. 2, p. 181, doi. 10.1134/1.1349928
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- Article
Quasi-Static Ion Currents in Thin Insulating Films of Metal–Insulator–Semiconductor Structures and the Distribution of Ions in the Films.
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- Semiconductors, 2001, v. 35, n. 2, p. 185, doi. 10.1134/1.1349929
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- Article
Simulation of Hysteresis in a Metal–Ferroelectric–Semiconductor Structure.
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- Semiconductors, 2001, v. 35, n. 2, p. 193, doi. 10.1134/1.1349930
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Investigation of a Change in the Chemical Composition of the Surface of Cd[sub x]Hg[sub 1 – ][sub x]Te Samples as a Result of Treatment by N[sub 2]O and H[sub 2] Gases Activated in a High-Frequency Discharge.
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- Semiconductors, 2001, v. 35, n. 2, p. 196
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- Article
Tunneling via Impurity States Related to the X Valley in a Thin AlAs Barrier.
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- Semiconductors, 2001, v. 35, n. 2, p. 199, doi. 10.1134/1.1349932
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- Article
Spectra of the Field and Current Oscillations in Superlattices Exposed to Terahertz Laser Radiation.
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- Semiconductors, 2001, v. 35, n. 2, p. 204, doi. 10.1134/1.1349933
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- Article
Investigation of the SiC/(SiC)[sub 1 – ][sub x](AlN)[sub x] Heterostructures by the Method of Capacitance–Voltage Characteristics.
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- Semiconductors, 2001, v. 35, n. 2, p. 209, doi. 10.1134/1.1349934
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Electron Localization and Bloch Oscillations in Quantum-Dot Superlattices under a Constant Electric Field.
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- Semiconductors, 2001, v. 35, n. 2, p. 212, doi. 10.1134/1.1349935
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Optical Properties of Amorphous Carbon Films Deposited by Magnetron Sputtering of Graphite.
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- Semiconductors, 2001, v. 35, n. 2, p. 220, doi. 10.1134/1.1349936
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- Article
Contrast Enhancement in Image Transfer via Interaction of UV Radiation with Inorganic Photoresist Films.
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- Semiconductors, 2001, v. 35, n. 2, p. 226, doi. 10.1134/1.1349937
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Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films.
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- Semiconductors, 2001, v. 35, n. 2, p. 230, doi. 10.1134/1.1349938
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Optical Study of InP Quantum Dots.
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- Semiconductors, 2001, v. 35, n. 2, p. 235, doi. 10.1134/1.1349939
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High-Power High-Voltage Bipolar Transistors Based on Complex Semiconductor Structures.
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- Semiconductors, 2001, v. 35, n. 2, p. 238, doi. 10.1134/1.1349940
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- Article