Works matching IS 10637826 AND DT 2001 AND VI 35 AND IP 1

Results: 22

Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF[sub 2] Structures with Participation of Traps.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 112, doi. 10.1134/1.1340300

By:

Berashevich, Yu. A.;
Danilyuk, A. L.;
Kholod, A. N.;
Borisenko, V. E.

Publication type:

Article

An Avalanche Photodiode with Metal–Insulator–Semiconductor Properties.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 117, doi. 10.1134/1.1340301

By:

Sadygov, Z. Ya.;
Burbaev, T. M.;
Kurbatov, V. A.

Publication type:

Article

Vladimir Mikhaılovich Arutyunyan (dedicated to his 60th birthday).

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 122, doi. 10.1134/1.1345011

By:

Spitsyn, A.

Publication type:

Article

Mössbauer-Effect Study of Off-Center Atoms in IV–VI Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 14, doi. 10.1134/1.1340283

By:

Bland, J.;
Thomas, M. F.;
Virchenko, V. A.;
Kuz′min, V. S.;
Tkachenko, T. M.

Publication type:

Article

Resonance Tunneling of X-Electrons in AlAs/GaAs(111) Structures: Pseudopotential Calculations and Models.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 106, doi. 10.1134/1.1340299

By:

Karavaev, G. F.;
Chernyshov, V. N.

Publication type:

Article

Kinetics of Production of Oxygen-Containing Quenched-in Donors in Silicon and Their Nonuniform Distribution: An Analytical Solution.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 10, doi. 10.1134/1.1340282

By:

Selishchev, P. A.

Publication type:

Article

Magnetotransistors.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 1, doi. 10.1134/1.1340281

By:

Vikulin, I. M.;
Vikulina, L. F.;
Stafeev, V. I.

Publication type:

Article

A Long-Range Influence of the Argon-Ion Irradiation on the Silicon Nitride Layers Formed by the Ion Implantation.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 20, doi. 10.1134/1.1340284

By:

Demidov, E. S.;
Karzanov, V. V.;
Lobanov, D. A.;
Markov, K. A.;
Sdobnyakov, V. V.

Publication type:

Article

A Study of Luminescence Centers Related to Copper and Oxygen in ZnSe.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 24, doi. 10.1134/1.1340285

By:

Morozova, N. K.;
Karetnikov, I. A.;
Blinov, V. V.;
Gavrishchuk, E. M.

Publication type:

Article

The Concentration Dependence of Acceptor-State Radii in p-Hg[sub 0.78]Cd[sub 0.22]Te Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 33, doi. 10.1134/1.1340286

By:

Bogoboyashchiı, V. V.

Publication type:

Article

Effect of the Charge-Carrier Drift in a Built-in Quasi-Electric Field on the Emission Spectrum of the Graded-Gap Semiconductors.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 54, doi. 10.1134/1.1340289

By:

Bazyk, A. I.;
Kovalenko, V. F.;
Mironchenko, A. Yu.;
Shutov, S. V.

Publication type:

Article

Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 48, doi. 10.1134/1.1340288

By:

Agafonov, E. N.;
Aminov, U. A.;
Georgobiani, A. N.;
Lepnev, L. S.

Publication type:

Article

Infrared Tomography of the Charge-Carrier Lifetime and Diffusion Length in Semiconductor-Grade Silicon Ingots.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 40, doi. 10.1134/1.1340287

By:

Akhmetov, V. D.;
Fateev, N. V.

Publication type:

Article

The Electronic Spectrum and Electrical Properties of Germanium with a Doubly Charged Gold Impurity on Both Sides of the L[sub 1]⇄Δ[sub 1] Intervalley Transition for Uniform Pressures of up to 7 GPa.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 59, doi. 10.1134/1.1340290

By:

Daunov, M. I.;
Kamilov, I. K.;
Gabibov, S. F.

Publication type:

Article

Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 67, doi. 10.1134/1.1340291

By:

Ageeva, N. N.;
Bronevoı, I. L.;
Krivonosov, A. N.

Publication type:

Article

On the Physical Nature of a Photomechanical Effect.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 72, doi. 10.1134/1.1340292

By:

Gerasimov, A. B.;
Chiradze, G. D.;
Kutivadze, N. G.

Publication type:

Article

Excess Tunneling Currents in p-Si–n-3C-SiC Heterostructures.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 77, doi. 10.1134/1.1340293

By:

Karazhanov, S. Zh.;
Atabaev, I. G.;
Saliev, T. M.;
Kanaki, É. V.;
Dzhaksimov, E.

Publication type:

Article

Effect of Sulfur and Selenium on the Surface Relief of Insulating Films and Electrical Characteristics of Metal–Insulator–p-GaAs Structures.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 80, doi. 10.1134/1.1340294

By:

Panin, A. V.;
Shugurov, A. R.;
Kalygina, V. M.

Publication type:

Article

Deep Levels Related to Gallium Atom Clusters in GaAs.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 86, doi. 10.1134/1.1340295

By:

Grinyaev, S. N.;
Chaldyshev, V. A.

Publication type:

Article

Vibrational Spectra of Strained (001) ZnSe/ZnS, ZnSe/ZnTe, and ZnS/ZnTe Superlattices in Terms of the Keating Model.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 91, doi. 10.1134/1.1340296

By:

Prykina, E. N.;
Polygalov, Yu. I.;
Kopytov, A. V.

Publication type:

Article

Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 93, doi. 10.1134/1.1340297

By:

Zvonkov, B. N.;
Karpovich, I. A.;
Baıdus’, N. V.;
Filatov, D. O.;
Morozov, S. V.

Publication type:

Article

Persistent Photoeffects in p–i–n GaAs/AlGaAs Heterostructures with Double Quantum Wells.

Published in:

Semiconductors, 2001, v. 35, n. 1, p. 99, doi. 10.1134/1.1340298

By:

Dorozhkin, S. I.;
Timofeev, V. B.;
Hvam, J.

Publication type:

Article