Title: The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
Authors: Evstropov, V. V.; Dzhumaeva, M.; Zhilyaev, Yu. V.; Nazarov, N.; Sitnikova, A. A.; Fedorov, L. M.
Abstract: An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I-V) characteristic (in lnI-V coordinates) is independent of the width of the space-charge region, i.e., on n- and p-region doping levels. This fact is unexplained by existing models. A dislocation shunt model based on multihop tunneling through a dislocation line, which may be considered as a chain of parabolic potential barriers, is proposed. The density of dislocations predicted by this model is in agreement with the transmission electron microscopy (TEM) observations.
Subjects: EPITAXY; SEMICONDUCTOR junctions
Publication: Semiconductors, 2000, Vol 34, Issue 11, p1305
ISSN: 1063-7826
Publication type: Academic Journal
DOI: 10.1134/1.1325428

The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.

Evstropov, V. V.; Dzhumaeva, M.; Zhilyaev, Yu. V.; Nazarov, N.; Sitnikova, A. A.; Fedorov, L. M.