Works matching AU Konakova, R. V.

Results: 78

Electrical characteristics of GaAs LPE schottky diodes.
Published in:
Crystal Research & Technology, 1983, v. 18, n. 11, p. 1451, doi. 10.1002/crat.2170181131
By:
- Konakova, R. V.;
- Tkhorik, Yu. A.;
- Zaitsevskii, I. L.;
- Benč, V.;
- Morvic, M.;
- Kordoš, P.;
- Červenák, J.
Publication type:
Article
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Klad'ko, V. P.;
- Safryuk-Romanenko, N. V.;
- Lubchenko, A. I.;
- Sheremet, V. N.;
- Shynkarenko, V. V.;
- Slepova, A. S.;
- Pilipenko, V. A.;
- Petlitskaya, T. V.;
- Pilipchuk, A. S.;
- Konakova, R. V.;
- Sachenko, A. V.
Publication type:
Article
Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1180, doi. 10.1134/S1063782613090212
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Kapitanchuk, L. M.;
- Klad’ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Naumov, A. V.;
- Panteleev, V. N.;
- Sheremet, V. N.
Publication type:
Article
Effect of Gamma Irradiation on Photoconversion Characteristics of Metal/Gallium Arsenide Barrier Structures with Textured Interface.
Published in:
Technical Physics, 2002, v. 47, n. 6, p. 698, doi. 10.1134/1.1486191
By:
- Dmitruk, N. L.;
- Borkovskaya, O. Yu.;
- Konakova, R. V.;
- Mamontova, I. B.;
- Mamykin, S. V.;
- Voitsikhovskiy, D. I.
Publication type:
Article
The Formation and Thermal Stability of Multilayer Ohmic Contacts to n-GaAs with TiB[sub x] and Mo Diffusion Barriers.
Published in:
Technical Physics, 2000, v. 45, n. 11, p. 1452, doi. 10.1134/1.1325029
By:
- Milenin, V. V.;
- Konakova, R. V.;
- Ivanov, V. N.;
- Beketov, G. V.;
- Poludin, V. I.;
- Ermolovich, I. B.
Publication type:
Article
Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing.
Published in:
Technical Physics, 1999, v. 44, n. 5, p. 548, doi. 10.1134/1.1259381
By:
- Vasil’kovskiı, S. V.;
- Konakova, R. V.;
- Tkhorik, Yu. A.;
- Dukhnovskiı, M. P.
Publication type:
Article
Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures.
Published in:
Technical Physics, 1998, v. 43, n. 12, p. 1445, doi. 10.1134/1.1259222
By:
- Belyaev, A. A.;
- Belyaev, A. E.;
- Ermolovich, I. B.;
- Komirenko, S. M.;
- Konakova, R. V.;
- Lyapin, V. G.;
- Milenin, V. V.;
- Solov’ev, E. A.;
- Shevelev, M. V.
Publication type:
Article
Silicon diffused diodes with nearly ideal current–voltage characteristics.
Published in:
Technical Physics, 1998, v. 43, n. 10, p. 1257, doi. 10.1134/1.1259167
By:
- Boltovets, N. S.;
- Ismaılov, K. A.;
- Konakova, R. V.;
- Tagaev, M. B.
Publication type:
Article
Relationship between the electronic properties of the interface and the interphase interactions in NbN–GaAs heterostructures.
Published in:
Technical Physics, 1998, v. 43, n. 1, p. 56, doi. 10.1134/1.1258936
By:
- Belyaev, A. A.;
- Venger, E. F.;
- Lyapin, V. G.;
- Konakova, R. V.;
- Milenin, V. V.;
- Tkhorik, Yu. A.;
- Hotovy, I.;
- Kashin, G. N.
Publication type:
Article
Properties of Al, (AuGe)–GaAs contacts fabricated by combining ion-beam treatment and metallization.
Published in:
Technical Physics, 1997, v. 42, n. 2, p. 232, doi. 10.1134/1.1258631
By:
- Ermolovich, I. B.;
- Yu. Il’in, I.;
- Konakova, R. V.;
- Milenin, V. V.
Publication type:
Article
Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide.
Published in:
Technical Physics Letters, 1999, v. 25, n. 10, p. 789, doi. 10.1134/1.1262636
By:
- Ermolovich, I. B.;
- Konakova, R. V.;
- Milenin, V. V.;
- Senkevich, A. I.
Publication type:
Article
Formation of titanium oxide films on the surface of porous silicon carbide.
Published in:
Technical Physics, 2008, v. 53, n. 9, p. 1232, doi. 10.1134/S1063784208090168
By:
- Bacherikov, Yu. Yu.;
- Dmitruk, N. L.;
- Konakova, R. V.;
- Kondratenko, O. S.;
- Milenin, V. V.;
- Okhrimenko, O. B.;
- Kapitanchuk, L. M.;
- Svetlichnyi, A. M.;
- Moskovchenko, N. N.
Publication type:
Article
Effect of Microwave Annealing on Silicon Dioxide/Silicon Carbide Structures.
Published in:
Technical Physics, 2003, v. 48, n. 5, p. 598, doi. 10.1134/1.1576474
By:
- Bacherikov, Yu. Yu.;
- Konakova, R. V.;
- Kocherov, A. N.;
- Lytvyn, P. M.;
- Lytvyn, O. S.;
- Okhrimenko, O. B.;
- Svetlichnyi, A. M.
Publication type:
Article
Phase Interactions in TiN[sub x](TiB[sub x])–n-Si–n[sup +]-Si Contacts and Their Thermal Degradation Due to Rapid Thermal Annealing.
Published in:
Technical Physics, 2003, v. 48, n. 4, p. 441, doi. 10.1134/1.1568486
By:
- Boltovets, N. S.;
- Ivanov, V. N.;
- Konakova, R. V.;
- Milenin, V. V.;
- Voıtsikhovskiı, D. I.
Publication type:
Article
Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2024, v. 27, n. 3, p. 274, doi. 10.15407/spqeo27.03.274
By:
- Okhrimenko, O. B.;
- Bacherikov, Yu. Yu.;
- Kolomys, O. F.;
- Maziar, D. M.;
- Strelchuk, V. V.;
- Lytvyn, V. K.;
- Konakova, R. V.
Publication type:
Article
Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 260, doi. 10.15407/spqeo26.03.260
By:
- Okhrimenko, O. B.;
- Bacherikov, Yu. Yu.;
- Lytvyn, P. M.;
- Lytvyn, O. S.;
- Goroneskul, V. Yu.;
- Konakova, R. V.
Publication type:
Article
Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355
By:
- Okhrimenko, O. B.;
- Bacherikov, Yu. Yu.;
- Kolomys, O. F.;
- Strelchuk, V. V.;
- Konakova, R. V.
Publication type:
Article
Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 253, doi. 10.15407/spqeo23.03.253
By:
- Bacherikov, Yu. Yu.;
- Konakova, R. V.;
- Okhrimenko, O. B.
Publication type:
Article
Peculiarities of study of Au-Ti-Pd-n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 34, doi. 10.15407/spqeo22.01.34
By:
- Romanets, P. M.;
- Konakova, R. V.;
- Boltovets, M. S.;
- Basanets, V. V.;
- Kudryk, Ya. Ya.;
- Slipokurov, V. S.
Publication type:
Article
Method for data processing in application to ohmic contacts.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 1, p. 11, doi. 10.15407/spqeo22.01.11
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Konakova, R. V.;
- Kovtonjuk, V. M.;
- Kudryk, Ya. Ya.;
- Shynkarenko, V. V.;
- Dub, M. M.;
- Saj, P. O.;
- Novitskii, S. V.
Publication type:
Article
Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 360, doi. 10.15407/spqeo21.04.360
By:
- Bacherikov, Yu. Yu.;
- Konakova, R. V.;
- Okhrimenko, O. B.;
- Berezovska, N. I.;
- Lytvyn, O. S.;
- Kapitanchuk, L. M.;
- Svetlichnyi, A. M.
Publication type:
Article
Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200
By:
- Bacherikov, Yu. Yu.;
- Dmitruk, N. L.;
- Konakova, R. V.;
- Kolomys, O. F.;
- Okhrimenko, O. B.;
- Strelchuk, V. V.;
- Lytvyn, O. S.;
- Kapitanchuk, L. M.;
- Svetlichnyi, A. M.
Publication type:
Article
Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 1, p. 5, doi. 10.15407/spqeo21.01.005
By:
- Sachenko, A. V.;
- Konakova, R. V.;
- Belyaev, A. E.
Publication type:
Article
Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 465, doi. 10.15407/spqeo20.04.465
By:
- Bacherikov, Yu. Yu.;
- Konakova, R. V.;
- Okhrimenko, O. B.;
- Berezovska, N. I.;
- Kapitanchuk, L. M.;
- Svetlichnyi, A. M.
Publication type:
Article
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
By:
- Vakhnyak, N. D.;
- Lotsko, O. P.;
- Budzulyak, S. I.;
- Demchyna, L. A.;
- Korbutyak, D. V.;
- Konakova, R. V.;
- Red'ko, R. A.;
- Okhrimenko, O. B.;
- Berezovska, N. I.
Publication type:
Article
Transformation of impurity-defect centers in single crystals CdTe:Cl under the influence of microwaves.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 2, p. 250, doi. 10.15407/spqeo20.02.250
By:
- Vakhnyak, N. D.;
- Lotsko, O. P.;
- Budzulyak, S. I.;
- Demchyna, L. A.;
- Korbutyak, D. V.;
- Konakova, R. V.;
- Red'ko, R. A.;
- Okhrimenko, O. B.;
- Berezovska, N. I.
Publication type:
Article
Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au-Ti-Pd-n+-n-n+-Si in IMPATT diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 366, doi. 10.15407/spqeo19.04.366
By:
- Romanets, P. M.;
- Belyaev, A. E.;
- Sachenko, A. V.;
- Boltovets, N. S.;
- Basanets, V. V.;
- Konakova, R. V.;
- Slipokurov, V. S.;
- Khodin, A. A.;
- Pilipenko, V. A.;
- Shynkarenko, V. V.;
- Kudryk, Ya. Ya.
Publication type:
Article
Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391
By:
- Belyaev, A. E.;
- Boltovets, N. A.;
- Bobyl, A. B.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Nasyrov, M. U.;
- Sachenko, A. V.;
- Slipokurov, V. S.;
- Slepova, A. S.;
- Safryuk, N. V.;
- Gudymenko, A. I.;
- Shynkarenko, V. V.
Publication type:
Article
Ohmic contacts based on Pd to indium phosphide Gunn diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 317, doi. 10.15407/spqeo18.03.317
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Bobyl, A. V.;
- Zorenko, A. V.;
- Arsentiev, I. N.;
- Kladko, V. P.;
- Kovtonyuk, V. M.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Sachenko, A. V.;
- Slipokurov, V. S.;
- Slepova, A. S.;
- Safryuk, N. V.;
- Gudymenko, A. I.;
- Shynkarenko, V. V.
Publication type:
Article
Influence of pulse magnetic fields treatment on optical properties of GaAs based films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 130
By:
- Konakova, R. V.;
- Sosnova, M. V.;
- Red'ko, S. M.;
- Milenin, V. V.;
- Red'ko, R. A.
Publication type:
Article
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 75
By:
- Konakova, R. V.;
- Red'ko, S. M.;
- Milenin, V. V.;
- Red'ko, R. A.
Publication type:
Article
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 1
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Vinogradov, A. O.;
- Pilipenko, V. A.;
- Petlitskaya, T. V.;
- Anischik, V. M.;
- Konakova, R. V.;
- Korostinskaya, T. V.;
- Kostylyov, V. P.;
- Kudryk, Ya. Ya.;
- Lyapin, V. G.;
- Romanets, P. N.;
- Sheremet, V. N.
Publication type:
Article
Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+ -GaN ohmic contacts.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 313
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Kapitanchuk, L. M.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Kuchuk, A. V.;
- Korostinskaya, T. V.;
- Pilipchuk, A. S.;
- Sheremet, V. N.;
- Mazur, Yu. I.;
- Ware, M. E.;
- Salamo, G. J.
Publication type:
Article
Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 289
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Zhigunov, V. S.;
- Konakova, R. V.;
- Panteleev, V. N.;
- Sachenko, A. V.;
- Sheremet, V. N.
Publication type:
Article
Role of dislocations in formation of ohmic contacts to heavily doped n-Si.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 99
By:
- Belyaev, A. E.;
- Pilipenko, V. A.;
- Anischik, V. M.;
- Petlitskaya, T. V.;
- Sachenko, A. V.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Boltovets, N. S.;
- Korostinskaya, T. V.;
- Kapitanchuk, L. M.;
- Kudryk, Ya. Ya.;
- Vinogradov, A. O.;
- Sheremet, V. N.
Publication type:
Article
Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 351
By:
- Sachenko, A. V.;
- Belyaev, A. E.;
- Boltovets, N. S.;
- Zhilyaev, Yu. V.;
- Kapitanchuk, L. M.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Kuchuk, A. V.;
- Naumov, A. V.;
- Panteleev, V. V.;
- Sheremet, V. N.
Publication type:
Article
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 2, p. 124
By:
- Sorokin, V. M.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Zinovchuk, A. V.;
- Bigun, R. I.;
- Kudryk, R. Ya.;
- Shynkarenko, V. V.
Publication type:
Article
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 1, p. 13
By:
- Bacherikov, Yu. Yu.;
- Boltovets, N. S.;
- Konakova, R. V.;
- Kolyadina, E. Yu.;
- Ledn'ova, T. M.;
- Okhrimenko, O. B.
Publication type:
Article
Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 465
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Sorokin, V. M.;
- Sheremet, V. N.;
- Shynkarenko, V. V.
Publication type:
Article
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 436, doi. 10.15407/spqeo13.04.436
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Sachenko, A. V.;
- Sheremet, V. N.
Publication type:
Article
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 4, p. 337, doi. 10.15407/spqeo13.04.337
By:
- Boltovets, M. S.;
- Ivanov, V. M.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Shynkarenko, V. V.;
- Sheremet, V. M.;
- Sveshnikov, Yu. N.;
- Yavich, B. S.
Publication type:
Article
Modification of properties of the glass--Si3N4-Si-SiO2 structure at laser treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 284
By:
- Konakova, R. V.;
- Kladko, V. P.;
- Lytvyn, O. S.;
- Okhrimenko, O. B.;
- Konoplev, B. G.;
- Svetlichnyi, A. M.;
- Lissotschenko, V. N.
Publication type:
Article
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 209, doi. 10.15407/spqeo11.03.209
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Sheremet, V. N.
Publication type:
Article
Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 311, doi. 10.15407/spqeo11.04.311
By:
- Kolyadina, E. Yu.;
- Konakova, R. V.;
- Matveeva, L. A.;
- Mitin, V. F.;
- Shynkarenko, V. V.;
- Atanassova, E.
Publication type:
Article
Development of high-stable contact systems to gallium nitride microwave diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 1
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Kapitanchuk, L. M.;
- Kladko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Kuchuk, A. V.;
- Lytvyn, O. S.;
- Milenin, V. V.;
- Sheremet, V. N.;
- Sveshnikov, Yu. N.
Publication type:
Article
On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 3, p. 1, doi. 10.15407/spqeo10.03.001
By:
- Belyaev, A. E.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Klad'ko, V. P.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Kuchuk, A. V.;
- Milenin, V. V.;
- Sveshnikov, Yu. N.;
- Sheremet, V. N.
Publication type:
Article
A silicon carbide thermistor.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 67, doi. 10.15407/spqeo9.04.067
By:
- Boltovets, N. S.;
- Kholevchuk, V. V.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Lytvyn, P. M.;
- Milenin, V. V.;
- Mitin, V. F.;
- Mitin, E. V.
Publication type:
Article
Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 2, p. 58, doi. 10.15407/spqeo9.02.058
By:
- Boltovets, N. S.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Milenin, V. V.;
- Mitin, V. F.;
- Mitin, E. V.;
- Lytvyn, O. S.;
- Kapitanchuk, L. M.
Publication type:
Article
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 105
By:
- Arsentyev, I. N.;
- Bobyl, A. V.;
- Tarasov, I. S.;
- Shishkov, M. V.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Belyaev, A. E.;
- Kamalov, A. B.;
- Konakova, R. V.;
- Kudryk, Ya. Ya.;
- Lytvyn, O. S.;
- Lytvyn, P. M.;
- Markovskiy, E. P.;
- Milenin, V. V.
Publication type:
Article
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 4, p. 65
By:
- Belyaev, A. E.;
- Bobyl, A. V.;
- Boltovets, N. S.;
- Ivanov, V. N.;
- Konakova, R. V.;
- Konnikov, S. G.;
- Kudryk, Ya. Ya.;
- Markovskiy, E. P.;
- Milenin, V. V.;
- Rudenko, E. M.;
- Tereschenko, G. F.;
- Ulin, V. P.;
- Ustinov, V. M.;
- Tsirlin, G. E.;
- Shpak, A. P.
Publication type:
Article