Works matching IS 10637842 AND DT 1999 AND VI 44 AND IP 5
Results: 28
New model interaction potential for the description of charged particle motion in matter.
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- Technical Physics, 1999, v. 44, n. 5, p. 481, doi. 10.1134/1.1259369
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Instability of a charged spherical drop moving relative to a medium.
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- Technical Physics, 1999, v. 44, n. 5, p. 486
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Asymmetric interaction of blast waves and shock waves with a body flying at supersonic velocity.
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- Technical Physics, 1999, v. 44, n. 5, p. 493, doi. 10.1134/1.1259371
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Effect of cathode surface state on the characteristics of pulsed hollow-cathode glow discharges.
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- Technical Physics, 1999, v. 44, n. 5, p. 497, doi. 10.1134/1.1259372
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Dynamic model for plasma opening switches.
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- Technical Physics, 1999, v. 44, n. 5, p. 501, doi. 10.1134/1.1259373
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Approximate similarity of electrophysical and kinematic processes during pulsed corona discharges in strong electrolytes.
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- Technical Physics, 1999, v. 44, n. 5, p. 506, doi. 10.1134/1.1259374
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Periodic injector with a porous pellet mold for introducing fuel into plasmas.
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- Technical Physics, 1999, v. 44, n. 5, p. 511, doi. 10.1134/1.1259375
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Kinetics of an irreversible transition to a normal state by a multiconductor superconducting composite.
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- Technical Physics, 1999, v. 44, n. 5, p. 516, doi. 10.1134/1.1259376
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Microwave breakdown initiated in a high-temperature superconducting film by thermal disturbances and defects.
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- Technical Physics, 1999, v. 44, n. 5, p. 526, doi. 10.1134/1.1259377
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Measure of the closeness of crystal lattices.
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- Technical Physics, 1999, v. 44, n. 5, p. 533, doi. 10.1134/1.1259378
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Electroluminescence kinetics of film structures based on manganese-doped zinc sulfide.
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- Technical Physics, 1999, v. 44, n. 5, p. 537, doi. 10.1134/1.1259379
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Application of a Gunn-diode current-pulse generator for modulation of semiconductor lasers.
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- Technical Physics, 1999, v. 44, n. 5, p. 544, doi. 10.1134/1.1259380
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Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing.
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- Technical Physics, 1999, v. 44, n. 5, p. 548, doi. 10.1134/1.1259381
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Measurement of the temporal and spectral characteristics of silicon p–i–n photodiodes in the soft x-ray range.
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- Technical Physics, 1999, v. 44, n. 5, p. 553, doi. 10.1134/1.1259535
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Ferroelectric materials for dynamic-memory integrated circuits.
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- Technical Physics, 1999, v. 44, n. 5, p. 558, doi. 10.1134/1.1259382
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On the mechanism of the photochromic process in copper-halide photochromic glasses.
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- Technical Physics, 1999, v. 44, n. 5, p. 562, doi. 10.1134/1.1259383
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Propagation of a monochromatic electromagnetic plane wave in a medium with nonsimple motion.
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- Technical Physics, 1999, v. 44, n. 5, p. 566, doi. 10.1134/1.1259384
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Branching of stationary inversion states in a cavity-pumped paramagnetic maser amplifier.
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- Technical Physics, 1999, v. 44, n. 5, p. 570, doi. 10.1134/1.1259385
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Motion of a particle in a static magnetic field and the field of a monochromatic electromagnetic plane wave.
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- Technical Physics, 1999, v. 44, n. 5, p. 575, doi. 10.1134/1.1259386
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Dynamics of an electron beam from a high-current picosecond accelerator.
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- Technical Physics, 1999, v. 44, n. 5, p. 580, doi. 10.1134/1.1259387
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Influence of the initial state of adatoms on the ratio of atoms and ions in a sputtered particle flow.
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- Technical Physics, 1999, v. 44, n. 5, p. 584, doi. 10.1134/1.1259388
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Heating and acceleration of plasma during explosion of a wire in vacuum in a strong longitudinal magnetic field.
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- Technical Physics, 1999, v. 44, n. 5, p. 588, doi. 10.1134/1.1259389
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Fractal model for polarization switching kinetics in ferroelectric crystals.
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- Technical Physics, 1999, v. 44, n. 5, p. 595, doi. 10.1134/1.1259390
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Effect of carbon ion bombardment and surface oxidation on the twinning rate of single-crystal bismuth.
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- Technical Physics, 1999, v. 44, n. 5, p. 597, doi. 10.1134/1.1259391
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Short-wavelength radiation by nonrelativistic particles.
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- Technical Physics, 1999, v. 44, n. 5, p. 599, doi. 10.1134/1.1259392
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Skin effect during propagation of high-power short-wavelength microwaves in a partially ionized semiconductor plasma.
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- Technical Physics, 1999, v. 44, n. 5, p. 602, doi. 10.1134/1.1259393
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Determination of the temperature of the onset of ion transport from the temperature dependence of the relative change in the ultrasound velocity in the lithium ceramic Li–Si–Ge–As–S–O.
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- Technical Physics, 1999, v. 44, n. 5, p. 604, doi. 10.1134/1.1259394
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Signal amplitude and amplitude spectrum shape of a detector with incomplete charge transport.
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- Technical Physics, 1999, v. 44, n. 5, p. 606, doi. 10.1134/1.1259395
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