Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 8
Results: 24
Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons.
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- Semiconductors, 2000, v. 34, n. 8, p. 861, doi. 10.1134/1.1188089
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TEM Structural Studies of Undoped and Si-doped GaN Grown on Al[sub 2]O[sub 3] Substrate.
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- Semiconductors, 2000, v. 34, n. 8, p. 867, doi. 10.1134/1.1188090
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Properties of Precisely Compensated Semiconductors.
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- Semiconductors, 2000, v. 34, n. 8, p. 872, doi. 10.1134/1.1188091
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Electrical Properties of Semiconductors with Pair Defects.
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- Semiconductors, 2000, v. 34, n. 8, p. 880, doi. 10.1134/1.1188092
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Transition of a Noncavity Bistable Exciton System Driven by Correlated External Noise to a Strongly Absorbing State.
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- Semiconductors, 2000, v. 34, n. 8, p. 886, doi. 10.1134/1.1188093
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Variable-Range-Hopping Conduction via Indium Impurity States in Pb[sub 0.78]Sn[sub 0.22]Te Solid Solution.
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- Semiconductors, 2000, v. 34, n. 8, p. 889, doi. 10.1134/1.1188094
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Spectral Shift of Photoluminescence Bands of the (SiC)[sub 1 – ][sub x](AlN)[sub x] Epitaxial Films due to Laser Annealing.
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- Semiconductors, 2000, v. 34, n. 8, p. 891, doi. 10.1134/1.1188095
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Gallium-induced Deep Level in Pb[sub 1 – ][sub x]Ge[sub x]Te Alloys.
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- Semiconductors, 2000, v. 34, n. 8, p. 894, doi. 10.1134/1.1188096
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Hole Concentration and Thermoelectric Figure of Merit for Pb[sub 1 – ][sub x]Sn[sub x]Te:Te Solid Solutions.
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- Semiconductors, 2000, v. 34, n. 8, p. 897, doi. 10.1134/1.1188097
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Fine Structure of the Dielectric-Function Spectrum in Diamond.
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- Semiconductors, 2000, v. 34, n. 8, p. 902, doi. 10.1134/1.1188098
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Mutual Electron–Phonon Drag and Low-Temperature Anomalies of Thermoelectric and Thermomagnetic Effects in HgSe:Fe Crystals.
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- Semiconductors, 2000, v. 34, n. 8, p. 908, doi. 10.1134/1.1188099
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- Article
Ionization Energy of Copper in Hg[sub 0.8]Cd[sub 0.2]Te Crystals under Conditions of Light and Intermediate Doping.
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- Semiconductors, 2000, v. 34, n. 8, p. 916, doi. 10.1134/1.1188100
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- Article
Nonlinear Optical Absorption in a Heavily Doped Degenerate n-GaAs.
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- Semiconductors, 2000, v. 34, n. 8, p. 924, doi. 10.1134/1.1188101
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Tunnel Light-Emitting Si:(Er,O) Diodes with a Short Rise Time of Er[sup 3+] Electroluminescence under Breakdown Conditions.
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- Semiconductors, 2000, v. 34, n. 8, p. 927, doi. 10.1134/1.1188102
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Distribution of Mobile Ions in Thin Insulator Films at the Insulator–Semiconductor Interface.
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- Semiconductors, 2000, v. 34, n. 8, p. 931, doi. 10.1134/1.1188103
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The Dislocation Nature of a Tunneling Excess Current in GaAs–Ni Structures Modified by Laser Radiation.
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- Semiconductors, 2000, v. 34, n. 8, p. 937, doi. 10.1134/1.1188104
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Thermodynamic and Kinetic Aspects of Reconstruction Transitions at the GaAs(001) Surface.
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- Semiconductors, 2000, v. 34, n. 8, p. 939, doi. 10.1134/1.1188105
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Electron–Ion Exchange at the Insulator–Semiconductor Interfaces and Its Influence on Ion Transport in the Insulating Layer.
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- Semiconductors, 2000, v. 34, n. 8, p. 945, doi. 10.1134/1.1188106
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Properties of Diode Heterostructures Based on Nanocrystalline n-SnO[sub 2] on p-Si under the Conditions of Gas Adsorption.
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- Semiconductors, 2000, v. 34, n. 8, p. 955
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Band Offsets in Zn[sub 1 – ][sub x]Cd[sub x]Te/ZnTe Single-Quantum-Well Structures Grown by Molecular-Beam Epitaxy on GaAs(001) Substrates.
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- Semiconductors, 2000, v. 34, n. 8, p. 960, doi. 10.1134/1.1188108
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High-Frequency Properties of Avalanche Multiplication of Photocarriers in Structures with Negative Feedback.
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- Semiconductors, 2000, v. 34, n. 8, p. 971, doi. 10.1134/1.1188110
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Parameters of Metal One-Electron Transistors Based on Various Materials.
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- Semiconductors, 2000, v. 34, n. 8, p. 975, doi. 10.1134/1.1188111
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Izmail Arturovich Abroyan.
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- Semiconductors, 2000, v. 34, n. 8, p. 981, doi. 10.1134/1.1188112
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The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.
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- Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109
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