Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 7
Results: 24
Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations.
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- Semiconductors, 2000, v. 34, n. 7, p. 741, doi. 10.1134/1.1188065
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The Magnetoresistance of Compensated Ge:As at Microwave Frequencies in the Vicinity of the Metal–Insulator Phase Transition.
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- Semiconductors, 2000, v. 34, n. 7, p. 746, doi. 10.1134/1.1188066
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The Role of Nonequilibrium Carriers in Linear Charge Transport (Ohm’s Law).
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- Semiconductors, 2000, v. 34, n. 7, p. 755, doi. 10.1134/1.1188067
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Liquid Phase Reflectivity under Conditions of Laser-Induced Silicon Melting.
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- Semiconductors, 2000, v. 34, n. 7, p. 759, doi. 10.1134/1.1188068
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Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg[sub 1 – ][sub x]Cd[sub x]Te.
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- Semiconductors, 2000, v. 34, n. 7, p. 763, doi. 10.1134/1.1188069
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Hysteresis of Magnetoresistance in Neutron-Transmutation-Doped Ge in the Region of Hopping Transport over the Coulomb-Gap States.
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- Semiconductors, 2000, v. 34, n. 7, p. 768, doi. 10.1134/1.1188070
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The Role of Impact Ionization in the Formation of Reverse Current–Voltage Characteristics of Al–SiO[sub 2]–n-Si Tunnel Structures.
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- Semiconductors, 2000, v. 34, n. 7, p. 775, doi. 10.1134/1.1188071
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Photosensitivity of Structures Based on ZnSe Single Crystals.
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- Semiconductors, 2000, v. 34, n. 7, p. 781, doi. 10.1134/1.1188072
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Analysis of Charges and Surface States at the Interfaces of Semiconductor–Insulator–Semiconductor Structures.
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- Semiconductors, 2000, v. 34, n. 7, p. 786, doi. 10.1134/1.1188073
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Polarization Photosensitivity of a-Si:H/c-Si Heterojunctions.
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- Semiconductors, 2000, v. 34, n. 7, p. 790, doi. 10.1134/1.1188074
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Photosensitivity of In–SiO[sub 2]–Cd[sub 0.28]Hg[sub 0.72]Te Structures with a Nontransparent Field Electrode.
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- Semiconductors, 2000, v. 34, n. 7, p. 794, doi. 10.1134/1.1188075
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The Hall Effect in Fe Submonolayer Systems on n- and p-type Si(111).
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- Semiconductors, 2000, v. 34, n. 7, p. 799, doi. 10.1134/1.1188076
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- Article
Negative Differential Conductance and the Bloch Oscillations in the Natural Superlattice of 8H Silicon Carbide Polytype.
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- Semiconductors, 2000, v. 34, n. 7, p. 803, doi. 10.1134/1.1188077
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Plasma Oscillations in Two-Dimensional Semiconductor Superstructures.
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- Semiconductors, 2000, v. 34, n. 7, p. 807, doi. 10.1134/1.1188078
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Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix.
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- Semiconductors, 2000, v. 34, n. 7, p. 810, doi. 10.1134/1.1188079
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Impurity Absorption of Light in Confined Systems Subjected to a Longitudinal Magnetic Field.
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- Semiconductors, 2000, v. 34, n. 7, p. 815, doi. 10.1134/1.1188080
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Charge Carrier Interference in One-Dimensional Semiconductor Rings.
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- Semiconductors, 2000, v. 34, n. 7, p. 817, doi. 10.1134/1.1188081
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Simulation of Photochemical Transformations and Photodarkening in Photoresist Films Exposed to Pulsed Vacuum-Ultraviolet Radiation.
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- Semiconductors, 2000, v. 34, n. 7, p. 825, doi. 10.1134/1.1188082
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The Influence of Erbium on Electrical and Photoelectric Properties of Amorphous Silicon Produced by Radio-Frequency Silane Decomposition.
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- Semiconductors, 2000, v. 34, n. 7, p. 829, doi. 10.1134/1.1188083
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Fringing Field of High-Voltage Planar p–i–n Diodes with a Nonuniformly Doped Guard Ring.
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- Semiconductors, 2000, v. 34, n. 7, p. 835, doi. 10.1134/1.1188084
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Study of the Effect of Graded Gap Epilayers on the Performance of Cd[sub x]Hg[sub 1 – ][sub x]Te Photodiodes.
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- Semiconductors, 2000, v. 34, n. 7, p. 844
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InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0–3.3μm) for Diode Laser Spectroscopy.
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- Semiconductors, 2000, v. 34, n. 7, p. 848, doi. 10.1134/1.1188086
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Properties of Wide-Mesastripe InGaAsP/InP Lasers.
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- Semiconductors, 2000, v. 34, n. 7, p. 853, doi. 10.1134/1.1188087
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Zhores Ivanovich Alferov (dedicated to his 70th birthday).
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- Semiconductors, 2000, v. 34, n. 7, p. 857, doi. 10.1134/1.1188088
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- Article