Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 5
Results: 25
Carbon-Stimulated Increase in the Concentration of Gallium Divacancies in Semi-Insulating Undoped GaAs Crystals.
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- Semiconductors, 2000, v. 34, n. 5, p. 514, doi. 10.1134/1.1188017
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Effect of Diffusion Length and Surface Recombination on the Photopleochroism of Anisotropic Crystals.
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- Semiconductors, 2000, v. 34, n. 5, p. 517, doi. 10.1134/1.1188018
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Effect of Diffusion Length and Surface Recombination on the Polarization Quantum Efficiency of Anisotropic Crystals.
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- Semiconductors, 2000, v. 34, n. 5, p. 521, doi. 10.1134/1.1188019
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Conditions for Negative Differential Resistance and Switching in a Tunnel Diode under the Effect of an External Microwave Signal.
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- Semiconductors, 2000, v. 34, n. 5, p. 550, doi. 10.1134/1.1188026
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Hot Carrier Electromotive Force Caused by Surface Potential Modulation in a Strong Microwave Field.
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- Semiconductors, 2000, v. 34, n. 5, p. 555, doi. 10.1134/1.1188027
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- Article
Interaction between Copper and Antimony in a Solid Solution Based on Germanium with the Formation of a Charged Complex.
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- Semiconductors, 2000, v. 34, n. 5, p. 495, doi. 10.1134/1.1188014
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Special Features of the Sublimational Molecular-Beam Epitaxy of Si and Its Potentialities for Growing Si:Er/Si Structures.
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- Semiconductors, 2000, v. 34, n. 5, p. 502, doi. 10.1134/1.1188015
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The Influence of Electrically Inactive Impurities on the Formation of Donor Centers in Silicon Layers Implanted with Erbium.
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- Semiconductors, 2000, v. 34, n. 5, p. 510, doi. 10.1134/1.1188016
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- Article
Thermoelectric Power of the n-InSb in a Transverse Quantizing Magnetic Field at a Large Temperature Gradient.
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- Semiconductors, 2000, v. 34, n. 5, p. 525, doi. 10.1134/1.1188020
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Effect of Uniaxial Deformation on Electrophysical Parameters of 6H-SiC p–n Structures.
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- Semiconductors, 2000, v. 34, n. 5, p. 538, doi. 10.1134/1.1188023
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- Article
Deep-Level Centers in Undoped p-GaAs Layers Grown by Liquid Phase Epitaxy.
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- Semiconductors, 2000, v. 34, n. 5, p. 541, doi. 10.1134/1.1188024
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- Article
Photocapacitance Effect in a Monopolar Metal–Insulator–Semiconductor Capacitor at Low Temperatures.
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- Semiconductors, 2000, v. 34, n. 5, p. 545, doi. 10.1134/1.1188025
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- Article
Influence of Annealing on the Dislocation-Related Electrical Conductivity of Germanium.
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- Semiconductors, 2000, v. 34, n. 5, p. 527, doi. 10.1134/1.1188021
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- Article
Optical Spectroscopy of Excitonic States in CuInSe[sub 2].
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- Semiconductors, 2000, v. 34, n. 5, p. 534, doi. 10.1134/1.1188022
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Photosensitivity of Thin-Film Structures Based on (CuInSe[sub 2])[sub x](2ZnSe)[sub 1 – ][sub x] Solid Solutions.
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- Semiconductors, 2000, v. 34, n. 5, p. 558
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- Article
Shallow Acceptors in Strained Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures with Quantum Wells.
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- Semiconductors, 2000, v. 34, n. 5, p. 563, doi. 10.1134/1.1188029
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Exciton Energy States and Photoluminescence Spectra of the Strained-Layer ZnS–ZnSe Superlattices.
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- Semiconductors, 2000, v. 34, n. 5, p. 568
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- Article
Zero-Phonon and Dipole Γ–X Electron Transitions in GaAs/AlAs Quantum-Well Heterostructures in a Longitudinal Electric Field.
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- Semiconductors, 2000, v. 34, n. 5, p. 575, doi. 10.1134/1.1188031
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On the Spectra of Electrons and Holes in an Open Spherical Nanoheterostructure (through the Example of GaAs/Al[sub x]Ga[sub 1 – ][sub x]As/GaAs).
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- Semiconductors, 2000, v. 34, n. 5, p. 583, doi. 10.1134/1.1188032
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- Article
Study of Decay of Elastically Strained Germanium Film at the Silicon Surface.
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- Semiconductors, 2000, v. 34, n. 5, p. 589, doi. 10.1134/1.1188033
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Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
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- Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
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Current–Voltage Characteristics of Electroluminescent Me/(a-Si:H):Er/c-Si Structures Prepared by Magnetron Sputtering.
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- Semiconductors, 2000, v. 34, n. 5, p. 598, doi. 10.1134/1.1188035
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Charge-Carrier Transport in a Double-Collector Magnetotransistor.
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- Semiconductors, 2000, v. 34, n. 5, p. 603, doi. 10.1134/1.1188036
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A Method for Modulation of the Charge-Carrier Mobility in a Semiconductor.
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- Semiconductors, 2000, v. 34, n. 5, p. 606, doi. 10.1134/1.1188037
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Power Conversion Efficiency of Quantum Dot Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038
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