Works matching IS 10637826 AND DT 2000 AND VI 34 AND IP 4

Results: 24

Thermodynamics of Complex Formation and Defect Clustering in Semiconductors.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 371, doi. 10.1134/1.1187990
By:
- Bulyarskiı, S. V.;
- Svetukhin, V. V.;
- L’vov, P. E.
Publication type:
Article
Highly Efficient n-(Bi,Sb)[sub 2]Te[sub 3] Thermoelectric Materials for Temperatures Below 200 K.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 376, doi. 10.1134/1.1187991
By:
- Kutasov, V. A.;
- Luk’yanova, L. N.;
- Konstantinov, P. P.
Publication type:
Article
Tunneling Spectroscopy of Impurity Atoms in a Single-Crystal Semiconductor Matrix.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 381, doi. 10.1134/1.1187992
By:
- Kartavykh, A. V.;
- Maslova, N. S.;
- Panov, V. I.;
- Rakov, V. V.;
- Savinov, S. V.
Publication type:
Article
Saturation of Interband Absorption in Semiconductors.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 386, doi. 10.1134/1.1187993
By:
- Melikyan, A. O.;
- Minasyan, G. R.
Publication type:
Article
Scattering of Phonons by a Spatially Correlated System of Fe Atoms and the Low-Temperature Anomaly of Thermal Conductivity in HgSe:Fe Crystals.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 389, doi. 10.1134/1.1187994
By:
- Kuleev, I. G.;
- Lonchakov, A. T.;
- Arapova, I. Yu.
Publication type:
Article
Activation-Controlled Conduction and Metal–Insulator Transition in the Impurity Band of Narrow-Gap p-Hg[sub 1 – ][sub x]Cd[sub x]Te Doped Crystals.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 398, doi. 10.1134/1.1187995
By:
- Bogoboyashchiı, V. V.;
- Gasan-zade, S. G.;
- Shepel’skiı, G. A.
Publication type:
Article
Participation of the Electron Subsystem of a Crystal in the Reactions of Defect-Complex Decomposition in Semiconductors.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 410, doi. 10.1134/1.1187997
By:
- Boyarkina, N. I.
Publication type:
Article
Bandgap and Intrinsic Carrier Concentration in HgCdMnTe and HgCdZnTe.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 415, doi. 10.1134/1.1187998
By:
- Bodnaruk, O. A.;
- Markov, A. V.;
- Ostapov, S. É.;
- Rarenko, I. M.;
- Slonetskiı, A. F.
Publication type:
Article
Cathodoluminescence and Raman Scattering in Ga[sub 1 – ][sub x]Al[sub x]P Epitaxial Films.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 405, doi. 10.1134/1.1187996
By:
- Vodop’yanov, L. K.;
- Kozlovskiı, V. I.;
- Mel’nik, N. N.
Publication type:
Article
Fission of Longitudinal Autosolitons in InSb in a Magnetic Field.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 418, doi. 10.1134/1.1187999
By:
- Kamilov, I. K.;
- Stepurenko, A. A.;
- Kovalev, A. S.
Publication type:
Article
Optical Spectra and Electronic Structure of Cubic Silicon Carbide.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 433, doi. 10.1134/1.1188002
By:
- Sobolev, V. V.;
- Shestakov, A. N.
Publication type:
Article
Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 422, doi. 10.1134/1.1188000
By:
- Drichko, I. L.;
- D’yakonov, A. M.;
- Smirnov, I. Yu.;
- Toropov, A. I.
Publication type:
Article
Variation in the Defect Structure of p-CdTe Single Crystals at the Passage of the Laser Shock Wave.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 429, doi. 10.1134/1.1188001
By:
- Baıdullaeva, A.;
- Vlasenko, A. I.;
- Gorkovenko, B. L.;
- Lomovtsev, A. V.;
- Mozol’, P. E.
Publication type:
Article
On the Theory of Anomalous Photovoltage in Multilayer Structures with p–n Junctions.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 438, doi. 10.1134/1.1188003
By:
- Agarev, V. N.;
- Stepanova, N. A.
Publication type:
Article
Equilibrium Distributions of Shallow-Level Impurity and Potential in the Near-Surface Region of a Semiconductor in a Model with a Completely Depleted Layer.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 441, doi. 10.1134/1.1188004
By:
- Gavrilovets, V. V.;
- Bondarenko, V. B.;
- Kudinov, Yu. A.;
- Korablev, V. V.
Publication type:
Article
On the Static Conductivity of a Disordered Quantum System with the Mirror Symmetry.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 445, doi. 10.1134/1.1188005
By:
- Moiseev, A. G.
Publication type:
Article
A Numerical Calculation of Auger Recombination Coefficients for InGaAsP/InP Quantum Well Heterostructures.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 448
By:
- Gun’ko, N. A.;
- Polkovnikov, A. S.;
- Zegrya, G. G.
Publication type:
Article
Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 453, doi. 10.1134/1.1188007
By:
- Talalaev, V. G.;
- Novikov, B. V.;
- Verbin, S. Yu.;
- Novikov, A. B.;
- Thath, Dinh Son;
- Shchur, I. V.;
- Gobsch, G.;
- Goldhahn, R.;
- Stein, N.;
- Golombek, A.;
- Tsyrlin, G. É.;
- Petrov, V. N.;
- Ustinov, V. M.;
- Zhukov, A. E.;
- Egorov, A. Yu.
Publication type:
Article
Charge Carrier Interference in Modulated Quantum Wires.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 462, doi. 10.1134/1.1188008
By:
- Bagraev, N. T.;
- Gehlhoff, W.;
- Ivanov, V. K.;
- Klyachkin, L. E.;
- Malyarenko, A. M.;
- Shelykh, I. A.
Publication type:
Article
Dependence of the Energy Spectrum of a Strained ZnSe/ZnS Superlattice on the Charge-Carrier Concentration.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 473, doi. 10.1134/1.1188009
By:
- Peleshchak, R. M.;
- Lukiyanets, B. A.
Publication type:
Article
Structure and Properties of a-Si:H Films Grown by Cyclic Deposition.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 477
By:
- Afanas’ev, V. P.;
- Gudovskikh, A. S.;
- Kon’kov, O. I.;
- Kazanin, M. M.;
- Kougiya, K. V.;
- Sazanov, A. P.;
- Trapeznikova, I. N.;
- Terukov, E. I.
Publication type:
Article
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 481, doi. 10.1134/1.1188011
By:
- Krestnikov, I. L.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Musikhin, Yu. G.;
- Kartashova, A. P.;
- Usikov, A. S.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Soshnikov, I. P.;
- Hahn, E.;
- Neubauer, B.;
- Rosenauer, A.;
- Litvinov, D.;
- Gerthsen, D.;
- Plaut, A. C.;
- Hoffmann, A. A.;
- Bimberg, D.
Publication type:
Article
Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0–3.6μm).
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 488, doi. 10.1134/1.1188012
By:
- Aıdaraliev, M.;
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.;
- Beyer, T.;
- Brunner, R.
Publication type:
Article
Aleksandr Aleksandrovich Rogachev.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 493, doi. 10.1134/1.1188013
By:
- Alferov, Zh. I.;
- Altukhov, P.D.;
- Afrosimov, V.V.;
- Bagaev, V.S.;
- Varshalovich, D.A.;
- Volkov, B.A.;
- Grekhov, I.V.;
- Zabrodskii, A.G.;
- Zakharchenya, B.P.;
- Zayats, V.A.;
- Kopaev, Yu. V.;
- Korol'kov, V.I.;
- Kop'ev, P.S.;
- Mazets, E.P.;
- Mikhailov, G.V.;
- Ostroumova, E.V.;
- Parfen'ev, R.V.;
- Perel, V.I.;
- Petrov, M.P.
Publication type:
Article