Induced photopleochroism in semiconductors Review.
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- Semiconductors, 1999, v. 33, n. 5, p. 483, doi. 10.1134/1.1187718
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- Article
Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 5
Results: 22
1
2
Effect of in situ photoexcitation of n-type Si as a result of ion implantation at low doses on the formation of radiation defects.
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- Semiconductors, 1999, v. 33, n. 5, p. 504, doi. 10.1134/1.1187891
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- Article
3
Effect of the irradiation intensity on the efficiency of the production radiation defects in n- and p-type Si crystals.
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- Semiconductors, 1999, v. 33, n. 5, p. 508, doi. 10.1134/1.1187900
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- Article
4
Spontaneously forming periodic composition-modulated InGaAsP structures.
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- Semiconductors, 1999, v. 33, n. 5, p. 510, doi. 10.1134/1.1187719
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- Publication type:
- Article
5
Absorption of infrared radiation by free charge carriers in n-type Cd[sub 1-x]Zn[sub x]Te.
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- Semiconductors, 1999, v. 33, n. 5, p. 514, doi. 10.1134/1.1187890
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- Publication type:
- Article
6
Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them.
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- Semiconductors, 1999, v. 33, n. 5, p. 518, doi. 10.1134/1.1187720
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- Publication type:
- Article
7
Photoluminescence of Si[sub 3]N[sub 4] films implanted with Ge[sup +] and Ar[sup +] ions.
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- Semiconductors, 1999, v. 33, n. 5, p. 523, doi. 10.1134/1.1187721
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- Publication type:
- Article
8
Saturated vertical drift velocity of electrons in silicon carbide polytypes.
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- Semiconductors, 1999, v. 33, n. 5, p. 547, doi. 10.1134/1.1187725
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- Article
9
Dependence of the properties of Cd1-xZnxTe crystals on the type of intrinsic point defect formed by oxygen.
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- Semiconductors, 1999, v. 33, n. 5, p. 531, doi. 10.1134/1.1187722
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- Publication type:
- Article
10
Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type CdxHg1-xTe.
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- Semiconductors, 1999, v. 33, n. 5, p. 536, doi. 10.1134/1.1187902
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- Article
11
The effect of fields due to charge centers at random locations in a semiconductor crystal on the electronic structure of neutral acceptors and on the polarization of luminescence generated by <conduction band>-acceptor transitions.
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- Semiconductors, 1999, v. 33, n. 5, p. 541, doi. 10.1134/1.1187723
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- Publication type:
- Article
12
The effect of intense laser light on the absorption-edge region of the spectrum of a CdCr2Se4 ferromagnetic semiconductor.
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- Semiconductors, 1999, v. 33, n. 5, p. 544, doi. 10.1134/1.1187724
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- Publication type:
- Article
13
Slow photoconductivity relaxation due to radiation defects in p-type Si.
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- Semiconductors, 1999, v. 33, n. 5, p. 529, doi. 10.1134/1.1187901
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- Publication type:
- Article
14
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts.
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- Semiconductors, 1999, v. 33, n. 5, p. 551, doi. 10.1134/1.1187726
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- Publication type:
- Article
15
Nanorelief of an oxidized cleaved surface of a grid of alternating Ga[sub 0.7]Al[sub 0.3]As and GaAs heterolayers.
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- Semiconductors, 1999, v. 33, n. 5, p. 555, doi. 10.1134/1.1187727
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- Publication type:
- Article
16
Spectrum and electron-phonon interaction in a medium with a cylindrical quantum wire.
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- Semiconductors, 1999, v. 33, n. 5, p. 559, doi. 10.1134/1.1187728
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- Publication type:
- Article
17
Electron and hole spectra in a superlattice of cylindrical quantum wires.
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- Semiconductors, 1999, v. 33, n. 5, p. 564, doi. 10.1134/1.1187729
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- Article
18
Vibrational spectra of erbium- and copper-modified hydrogenated amorphous carbon.
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- Semiconductors, 1999, v. 33, n. 5, p. 569, doi. 10.1134/1.1187730
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- Publication type:
- Article
19
Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity.
- Published in:
- Semiconductors, 1999, v. 33, n. 5, p. 574, doi. 10.1134/1.1187731
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- Publication type:
- Article
20
D’yakonov–Shur instability in a ballistic field-effect transistor with a spatially nonuniform channel.
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- Semiconductors, 1999, v. 33, n. 5, p. 578, doi. 10.1134/1.1187732
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- Article
21
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.
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- Semiconductors, 1999, v. 33, n. 5, p. 586, doi. 10.1134/1.1187733
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- Publication type:
- Article
22
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry.
- Published in:
- Semiconductors, 1999, v. 33, n. 5, p. 590, doi. 10.1134/1.1187734
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- Publication type:
- Article