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Title: Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.
Authors: Mezdrogina, M. M.; Annaorazova, M. P.; Terukov, E. I.; Trapeznikova, I. N.; Nazarov, N.
Abstract: We have observed photoluminescence at 1.54 µm from a-Si:H films doped with erbium of various degrees of purity. It is shown that the additional introduction of oxygen activates the Er ions. The effect of silicides and defects in amorphous silicon a-Si:H films and in crystalline silicon c-Si is investigated.
Subjects: PHOTOLUMINESCENCE; SILICON
Publication: Semiconductors, 1999, Vol 33, Issue 10, p1145
ISSN: 1063-7826
Publication type: Academic Journal
DOI: 10.1134/1.1187884

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Formation of optically active centers in films of erbium-doped amorphous hydrated silicon.