Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 9

Results: 33

Quantization of magnetic induction in a 2D system under conditions of the quantum Hall effect.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1043, doi. 10.1134/1.1187837

By:

Zegrya, G. G.

Publication type:

Article

Silicon-germanium—a promise into the future?

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 939, doi. 10.1134/1.1187807

By:

Grimmeiss, H. G.

Publication type:

Article

Quantum dot lasers: the birth and future trends.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 946, doi. 10.1134/1.1187809

By:

Ledentsov, N. N.

Publication type:

Article

Effect of local vibrations on the H and D atom densities at a Si surface.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1002, doi. 10.1134/1.1187824

By:

Ipatova, I. P.;
Chikalova-Luzina, O. P.;
Hess, K.

Publication type:

Article

Irradiation as a possible method for producing SiC heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1004, doi. 10.1134/1.1187825

By:

Lebedev, A. A.

Publication type:

Article

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9μm).

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1007, doi. 10.1134/1.1187826

By:

Sokolova, Z. N.;
Vinokurov, D. A.;
Tarasov, I. S.;
Gun’ko, N. A.;
Zegrya, G. G.

Publication type:

Article

Spontaneously assembling periodic composition-modulated InGaAsP structures.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1010, doi. 10.1134/1.1187827

By:

Vavilova, L. S.;
Kapitonov, V. A.;
Murashova, A. V.;
Pikhtin, N. A.;
Tarasov, I. S.;
Ipatova, I. P.;
Shchukin, V. A.;
Bert, N. A.;
Sitnikova, A. A.

Publication type:

Article

Gain characteristics of quantum-dot injection lasers.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828

By:

Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Egorov, A. Yu.;
Ledentsov, N. N.;
Tsatsul’nikov, A. F.;
Maksimov, M. V.;
Zaıtsev, S. V.;
Shernyakov, Yu. M.;
Lunev, A. V.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Blue-green ZnSe lasers with a new type of active region.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1016, doi. 10.1134/1.1187829

By:

Ivanov, S. V.;
Toropov, A. A.;
Sorokin, S. V.;
Shubina, T. V.;
Sedova, I. V.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Waag, A.;
Lugauer, H. J.;
Reuscher, G.;
Keim, M.;
Fischer, F. F.;
Landwehr, G.

Publication type:

Article

Optical spectra of wide band gap Be[sub x]Zn[sub 1-x]Se alloys.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1021, doi. 10.1134/1.1187830

By:

Mintairov, A. M.;
Raymond, S.;
Merz, J. L.;
Peiris, F. C.;
Lee, S.;
Bindley, U.;
Furdyna, J. K.;
Melehin, V. G.;
Sadchikov, K.

Publication type:

Article

Excitonic molecules trapped by quantum dots and isoelectronic impurities in many-valley semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1024, doi. 10.1134/1.1187831

By:

Rogachev, A. A.

Publication type:

Article

High-frequency current instabilities in a silicon Auger transistor.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1027, doi. 10.1134/1.1187832

By:

Ostroumova, E. V.;
Rogachev, A. A.

Publication type:

Article

Application of superfast (10[sup 2]-10[sup 3] °C/s) cooling of a solution–melt in the liquid-phase epitaxy of semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1030, doi. 10.1134/1.1187833

By:

Abramov, A. V.;
Deryagin, N. G.;
Tret’yakov, D. N.

Publication type:

Article

GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution–melts.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1034

By:

Vasil’ev, V. I.;
Akhmedov, D.;
Geryagin, A. G.;
Kuchinskiı, V. I.;
Nikitina, I. P.;
Smirnov, V. M.;
Tret’yakov, D. N.

Publication type:

Article

Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe[sub 2] and CuInGaSe[sub 2] obtained by laser scanning.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1037, doi. 10.1134/1.1187835

By:

Medvedkin, G. A.;
Stolt, L.;
Wennerberg, J.

Publication type:

Article

Conductance of a quantum wire in a parallel magnetic field.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1040, doi. 10.1134/1.1187836

By:

Geıler, V. A.;
Margulis, V. A.

Publication type:

Article

In memory of Aleksandr Aleksandrovich Lebedev.

Published in:

1999

By:

Schippnick, Paul F.

Publication type:

Obituary

Eightieth anniversary of the Ioffe Institute.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 933, doi. 10.1134/1.1187806

By:

D’yakov, B. B.

Publication type:

Article

Heterostructure solar cells.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 942, doi. 10.1134/1.1187808

By:

Andreev, V. M.

Publication type:

Article

Electrons and phonons in quantum wells.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 956

By:

Pozˇela, J.;
Namajūnas, A.;
Pozˇela, K.;
Jucienė, V.

Publication type:

Article

Quantum dots: Paradigm changes in semiconductor physics.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 951, doi. 10.1134/1.1187810

By:

Bimberg, D.

Publication type:

Article

Physics and technologies of superhigh-efficiency tandem solar cells.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 961, doi. 10.1134/1.1187812

By:

Yamaguchi, M.

Publication type:

Article

Growth of III–N materials and devices by metalorganic chemical vapor deposition.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 965, doi. 10.1134/1.1187813

By:

Dupuis, R. D.;
Grudowski, P. A.;
Eiting, C. J.;
Park, J.

Publication type:

Article

High density 2DEG in III–V semiconductor heterostructures and high-electron-mobility transistors based on them.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 970, doi. 10.1134/1.1187814

By:

Mokerov, V. G.;
Fedorov, Yu. V.;
Hook, A. V.

Publication type:

Article

Heteroepitaxial growth of InAs on Si: a new type of quantum dot.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815

By:

Cyrlin, G. E.;
Petrov, V. N.;
Dubrovskii, V. G.;
Samsonenko, Yu. B.;
Polyakov, N. K.;
Golubok, A. O.;
Masalov, S. A.;
Komyak, N. I.;
Ustinov, V. M.;
Egorov, A. Yu.;
Kovsh, A. R.;
Maximov, M. V.;
Tsatsul’nikov, A. F.;
Volovik, B. V.;
Zhukov, A. E.;
Kop’ev, P. S.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

High-efficiency AlGaAs/GaAs concentrator (2500 suns) solar cells.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 976, doi. 10.1134/1.1187816

By:

Andreev, V. M.;
Khvostikov, V. P.;
Larionov, V. R.;
Rumyantsev, V. D.;
Paleeva, E. V.;
Shvarts, M. Z.

Publication type:

Article

Parabolic negative magnetoresistance in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 978, doi. 10.1134/1.1187817

By:

Arapov, Yu. G.;
Harus, G. I.;
Neverov, V. N.;
Shelushinina, N. G.;
Kuznetsov, O. A.

Publication type:

Article

Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 981, doi. 10.1134/1.1187818

By:

Asryan, L. V.;
Suris, R. A.

Publication type:

Article

Polarization anisotropy in optical reflection spectra of structures with open nanowires.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 985, doi. 10.1134/1.1187819

By:

Averkiev, N. S.;
Kognovitskii, S. O.;
Travnikov, V. V.

Publication type:

Article

Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 988, doi. 10.1134/1.1187820

By:

Astakhov, G. V.;
Kochereshko, V. P.;
Vasil’ev, D. G.;
Evtikhiev, V. P.;
Tokranov, V. E.;
Kudryashov, I. V.;
Mikhaılov, G. V.

Publication type:

Article

Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Giant linear polarization of photoluminescence in type-II ZnSe/BeTe superlattices.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 996, doi. 10.1134/1.1187822

By:

Platonov, A. V.;
Kochereshko, V. P.;
Mikhaılov, G. V.;
Yakovlev, D. R.;
Ossau, W.;
Waag, A.;
Landwehr, G.

Publication type:

Article

Wide-gap semiconductors for high-power electronics.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 999, doi. 10.1134/1.1187823

By:

Lebedev, A. A.;
Chelnokov, V. E.

Publication type:

Article