Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 9

Results: 33

Quantum dot lasers: the birth and future trends.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 946, doi. 10.1134/1.1187809
By:
- Ledentsov, N. N.
Publication type:
Article
Quantum dots: Paradigm changes in semiconductor physics.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 951, doi. 10.1134/1.1187810
By:
- Bimberg, D.
Publication type:
Article
Electrons and phonons in quantum wells.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 956
By:
- Pozˇela, J.;
- Namajūnas, A.;
- Pozˇela, K.;
- Jucienė, V.
Publication type:
Article
Physics and technologies of superhigh-efficiency tandem solar cells.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 961, doi. 10.1134/1.1187812
By:
- Yamaguchi, M.
Publication type:
Article
Growth of III–N materials and devices by metalorganic chemical vapor deposition.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 965, doi. 10.1134/1.1187813
By:
- Dupuis, R. D.;
- Grudowski, P. A.;
- Eiting, C. J.;
- Park, J.
Publication type:
Article
Effect of local vibrations on the H and D atom densities at a Si surface.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1002, doi. 10.1134/1.1187824
By:
- Ipatova, I. P.;
- Chikalova-Luzina, O. P.;
- Hess, K.
Publication type:
Article
Irradiation as a possible method for producing SiC heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1004, doi. 10.1134/1.1187825
By:
- Lebedev, A. A.
Publication type:
Article
InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9μm).
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1007, doi. 10.1134/1.1187826
By:
- Sokolova, Z. N.;
- Vinokurov, D. A.;
- Tarasov, I. S.;
- Gun’ko, N. A.;
- Zegrya, G. G.
Publication type:
Article
Spontaneously assembling periodic composition-modulated InGaAsP structures.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1010, doi. 10.1134/1.1187827
By:
- Vavilova, L. S.;
- Kapitonov, V. A.;
- Murashova, A. V.;
- Pikhtin, N. A.;
- Tarasov, I. S.;
- Ipatova, I. P.;
- Shchukin, V. A.;
- Bert, N. A.;
- Sitnikova, A. A.
Publication type:
Article
Gain characteristics of quantum-dot injection lasers.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Ledentsov, N. N.;
- Tsatsul’nikov, A. F.;
- Maksimov, M. V.;
- Zaıtsev, S. V.;
- Shernyakov, Yu. M.;
- Lunev, A. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Blue-green ZnSe lasers with a new type of active region.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1016, doi. 10.1134/1.1187829
By:
- Ivanov, S. V.;
- Toropov, A. A.;
- Sorokin, S. V.;
- Shubina, T. V.;
- Sedova, I. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Waag, A.;
- Lugauer, H. J.;
- Reuscher, G.;
- Keim, M.;
- Fischer, F. F.;
- Landwehr, G.
Publication type:
Article
Optical spectra of wide band gap Be[sub x]Zn[sub 1-x]Se alloys.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1021, doi. 10.1134/1.1187830
By:
- Mintairov, A. M.;
- Raymond, S.;
- Merz, J. L.;
- Peiris, F. C.;
- Lee, S.;
- Bindley, U.;
- Furdyna, J. K.;
- Melehin, V. G.;
- Sadchikov, K.
Publication type:
Article
Excitonic molecules trapped by quantum dots and isoelectronic impurities in many-valley semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1024, doi. 10.1134/1.1187831
By:
- Rogachev, A. A.
Publication type:
Article
High-frequency current instabilities in a silicon Auger transistor.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1027, doi. 10.1134/1.1187832
By:
- Ostroumova, E. V.;
- Rogachev, A. A.
Publication type:
Article
Application of superfast (10[sup 2]-10[sup 3] °C/s) cooling of a solution–melt in the liquid-phase epitaxy of semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1030, doi. 10.1134/1.1187833
By:
- Abramov, A. V.;
- Deryagin, N. G.;
- Tret’yakov, D. N.
Publication type:
Article
GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution–melts.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1034
By:
- Vasil’ev, V. I.;
- Akhmedov, D.;
- Geryagin, A. G.;
- Kuchinskiı, V. I.;
- Nikitina, I. P.;
- Smirnov, V. M.;
- Tret’yakov, D. N.
Publication type:
Article
Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe[sub 2] and CuInGaSe[sub 2] obtained by laser scanning.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1037, doi. 10.1134/1.1187835
By:
- Medvedkin, G. A.;
- Stolt, L.;
- Wennerberg, J.
Publication type:
Article
Conductance of a quantum wire in a parallel magnetic field.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1040, doi. 10.1134/1.1187836
By:
- Geıler, V. A.;
- Margulis, V. A.
Publication type:
Article
Quantization of magnetic induction in a 2D system under conditions of the quantum Hall effect.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 1043, doi. 10.1134/1.1187837
By:
- Zegrya, G. G.
Publication type:
Article
In memory of Aleksandr Aleksandrovich Lebedev.
Published in:
1999
By:
- Schippnick, Paul F.
Publication type:
Obituary
Eightieth anniversary of the Ioffe Institute.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 933, doi. 10.1134/1.1187806
By:
- D’yakov, B. B.
Publication type:
Article
Silicon-germanium—a promise into the future?
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 939, doi. 10.1134/1.1187807
By:
- Grimmeiss, H. G.
Publication type:
Article
Heterostructure solar cells.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 942, doi. 10.1134/1.1187808
By:
- Andreev, V. M.
Publication type:
Article
High density 2DEG in III–V semiconductor heterostructures and high-electron-mobility transistors based on them.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 970, doi. 10.1134/1.1187814
By:
- Mokerov, V. G.;
- Fedorov, Yu. V.;
- Hook, A. V.
Publication type:
Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
By:
- Cyrlin, G. E.;
- Petrov, V. N.;
- Dubrovskii, V. G.;
- Samsonenko, Yu. B.;
- Polyakov, N. K.;
- Golubok, A. O.;
- Masalov, S. A.;
- Komyak, N. I.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Maximov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Zhukov, A. E.;
- Kop’ev, P. S.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
High-efficiency AlGaAs/GaAs concentrator (2500 suns) solar cells.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 976, doi. 10.1134/1.1187816
By:
- Andreev, V. M.;
- Khvostikov, V. P.;
- Larionov, V. R.;
- Rumyantsev, V. D.;
- Paleeva, E. V.;
- Shvarts, M. Z.
Publication type:
Article
Parabolic negative magnetoresistance in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 978, doi. 10.1134/1.1187817
By:
- Arapov, Yu. G.;
- Harus, G. I.;
- Neverov, V. N.;
- Shelushinina, N. G.;
- Kuznetsov, O. A.
Publication type:
Article
Role of thermal ejection of carriers in the burning of spatial holes in quantum dot lasers.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 981, doi. 10.1134/1.1187818
By:
- Asryan, L. V.;
- Suris, R. A.
Publication type:
Article
Polarization anisotropy in optical reflection spectra of structures with open nanowires.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 985, doi. 10.1134/1.1187819
By:
- Averkiev, N. S.;
- Kognovitskii, S. O.;
- Travnikov, V. V.
Publication type:
Article
Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 988, doi. 10.1134/1.1187820
By:
- Astakhov, G. V.;
- Kochereshko, V. P.;
- Vasil’ev, D. G.;
- Evtikhiev, V. P.;
- Tokranov, V. E.;
- Kudryashov, I. V.;
- Mikhaılov, G. V.
Publication type:
Article
Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Giant linear polarization of photoluminescence in type-II ZnSe/BeTe superlattices.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 996, doi. 10.1134/1.1187822
By:
- Platonov, A. V.;
- Kochereshko, V. P.;
- Mikhaılov, G. V.;
- Yakovlev, D. R.;
- Ossau, W.;
- Waag, A.;
- Landwehr, G.
Publication type:
Article
Wide-gap semiconductors for high-power electronics.
Published in:
Semiconductors, 1999, v. 33, n. 9, p. 999, doi. 10.1134/1.1187823
By:
- Lebedev, A. A.;
- Chelnokov, V. E.
Publication type:
Article