Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 6

Results: 29

PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October...
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 595, doi. 10.1134/1.1187735
By:
- Zakharchenya, B. P.
Publication type:
Article
Erbium-doped silicon epilayers grown by liquid-phase epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 596, doi. 10.1134/1.1187762
By:
- Binetti, S.;
- Pizzini, S.;
- Cavallini, A.;
- Fraboni, B.
Publication type:
Article
Photoluminescence of erbium-doped silicon: excitation power dependence.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 598, doi. 10.1134/1.1187736
By:
- Ammerlaan, C. A. J.;
- Thao, D. T. X.;
- Gregorkiewicz, T.;
- Sobolev, N. A.
Publication type:
Article
Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 603, doi. 10.1134/1.1187737
By:
- Emtsev, V. V.;
- Poloskin, D. S.;
- Sobolev, N. A.;
- Shek, E. I.;
- Michel, J.;
- Kimerling, L. C.
Publication type:
Article
Redistribution of erbium during the crystallization of buried amorphous silicon layers.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 606, doi. 10.1134/1.1187738
By:
- Aleksandrov, O. V.;
- Nikolaev, Yu. A.;
- Sobolev, N. A.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Kudryavtsev, Yu. A.
Publication type:
Article
Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 610, doi. 10.1134/1.1187763
By:
- Sobolev, N. A.;
- Shek, E. I.;
- Emel’yanov, A. M.;
- Vdovin, V. I.;
- Yugova, T. G.
Publication type:
Article
Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 613, doi. 10.1134/1.1187739
By:
- Sobolev, N. A.;
- Nikolaev, Yu. A.;
- Emel’yanov, A. M.;
- Vdovin, V. I.
Publication type:
Article
Mechanisms of excitation of the f-f emission in silicon codoped with erbium and oxygen.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 616, doi. 10.1134/1.1187740
By:
- Masterov, V. F.;
- Gerchikov, L. G.
Publication type:
Article
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 622, doi. 10.1134/1.1187741
By:
- Bresler, M. S.;
- Gusev, O. B.;
- Pak, P. E.;
- Terukov, E. I.;
- Tséndin, K. D.;
- Yassievich, I. N.
Publication type:
Article
Effect of annealing on the optical and structural properties of GaN:Er.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 624, doi. 10.1134/1.1187742
By:
- Sobolev, N. A.;
- Lundin, V. V.;
- Sakharov, V. I.;
- Serenkov, I. T.;
- Usikov, A. S.;
- Emel’yanov, A. M.
Publication type:
Article
Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 627, doi. 10.1134/1.1187743
By:
- Gippius, A. A.;
- Konnov, V. M.;
- Dravin, V. A.;
- Loıko, N. N.;
- Kazakov, I. P.;
- Ushakov, V. V.
Publication type:
Article
Photothermoacoustic and photoelectric microscopy of silicon.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 630, doi. 10.1134/1.1187744
By:
- Burbelo, R. M.;
- Kuz’mich, A. G.;
- Kucherov, I. Ya.
Publication type:
Article
Radiation-thermal activation of silicon implanted in gallium arsenide.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 636, doi. 10.1134/1.1187745
By:
- Ardyshev, V. M.;
- Surzhikov, A. P.
Publication type:
Article
Photoionization of short-range acceptor states in uniaxially deformed semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 640, doi. 10.1134/1.1187746
By:
- Abramov, A. A.;
- Tulupenko, V. N.;
- Vas’ko, V. T.;
- Firsov, D. A.
Publication type:
Article
Electric and luminescence properties of GaAs–A[sup II]B[sup IV]C[sub 2][sup V] single crystals.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 645, doi. 10.1134/1.1187747
By:
- Polushina, I. K.;
- Rud’, Yu. V.;
- Rud’, V. Yu.
Publication type:
Article
Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 648, doi. 10.1134/1.1187748
By:
- Lyapilin, I. I.;
- Bikkin, Kh. M.
Publication type:
Article
Scanning tunneling microscopy investigation of the microtopography of SiO[sub 2] and Si surfaces at the Si/SiO[sub 2] interface in SIMOX structures.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 654, doi. 10.1134/1.1187749
By:
- Vyalykh, D. V.;
- Fedoseenko, S. I.
Publication type:
Article
Reconstruction and electron states of a Ga[sub 2]Se[sub 3]–GaAsheterointerface.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 658, doi. 10.1134/1.1187750
By:
- Agapov, B. L.;
- Bezryadin, N. N.;
- Kotov, G. I.;
- Sumets, M. P.;
- Arsent’ev, I. N.
Publication type:
Article
Sulfide passivation of GaAs power diodes.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 662, doi. 10.1134/1.1187751
By:
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.
Publication type:
Article
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 665, doi. 10.1134/1.1187752
By:
- Bezryadin, N. N.;
- Domashevskaya, É. P.;
- Kotov, G. I.;
- Kuz’menko, R. V.;
- Sumets, M. P.;
- Arsent’ev, I. N.
Publication type:
Article
Deep-level recombination spectroscopy in GaP light-emitting diodes.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 668, doi. 10.1134/1.1187753
By:
- Bulyarskiı, S. V.;
- Vorob’ev, M. O.;
- Grushko, N. S.;
- Lakalin, A. V.
Publication type:
Article
Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 672, doi. 10.1134/1.1187754
By:
- Belous, M. V.;
- Genkin, A. M.;
- Genkina, V. K.
Publication type:
Article
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 677, doi. 10.1134/1.1187755
By:
- Tsyrlin, G. É.;
- Petrov, V. N.;
- Masalov, S. A.;
- Golubok, A. O.
Publication type:
Article
Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D–quasi-3D transition.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 681, doi. 10.1134/1.1187756
By:
- Sapega, V. F.;
- Perel’, V. I.;
- Mirlin, D. N.;
- Akimov, I. A.;
- Ruf, T.;
- Cardona, M.;
- Winter, W.;
- Eberl, K.
Publication type:
Article
Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 684, doi. 10.1134/1.1187757
By:
- Zvonareva, T. K.;
- Sharonova, L. V.
Publication type:
Article
Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 689
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.;
- Khvostikov, V. P.
Publication type:
Article
Increasing the power of broad-waveguide lasers by additional selection of transverse modes.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 693, doi. 10.1134/1.1187759
By:
- Kostko, I. A.;
- Evtikhiev, V. P.;
- Kotel’nikov, E. Yu.;
- Zegrya, G. G.
Publication type:
Article
Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 700, doi. 10.1134/1.1187760
By:
- Aıdaraliev, M.;
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.
Publication type:
Article
In Memory of Vadim Fedorovich Masterov.
Published in:
Semiconductors, 1999, v. 33, n. 6, p. 704, doi. 10.1134/1.1187761
By:
- Schippnick, Paul F.
Publication type:
Article