Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 6

Results: 29

PUBLICATION OF THE SEMINAR PROCEEDINGS IS DEDICATED TO THE MEMORY OF V. F MASTEROV INTAS–RFBR Seminar on Rare-Earth Impurities in Semiconductors and Low-Dimensional Semiconductor Structures, St. Petersburg State Technical University, October...

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 595, doi. 10.1134/1.1187735

By:

Zakharchenya, B. P.

Publication type:

Article

Erbium-doped silicon epilayers grown by liquid-phase epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 596, doi. 10.1134/1.1187762

By:

Binetti, S.;
Pizzini, S.;
Cavallini, A.;
Fraboni, B.

Publication type:

Article

Photoluminescence of erbium-doped silicon: excitation power dependence.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 598, doi. 10.1134/1.1187736

By:

Ammerlaan, C. A. J.;
Thao, D. T. X.;
Gregorkiewicz, T.;
Sobolev, N. A.

Publication type:

Article

Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 603, doi. 10.1134/1.1187737

By:

Emtsev, V. V.;
Poloskin, D. S.;
Sobolev, N. A.;
Shek, E. I.;
Michel, J.;
Kimerling, L. C.

Publication type:

Article

Redistribution of erbium during the crystallization of buried amorphous silicon layers.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 606, doi. 10.1134/1.1187738

By:

Aleksandrov, O. V.;
Nikolaev, Yu. A.;
Sobolev, N. A.;
Sakharov, V. I.;
Serenkov, I. T.;
Kudryavtsev, Yu. A.

Publication type:

Article

Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium- and dysprosium-implanted silicon.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 610, doi. 10.1134/1.1187763

By:

Sobolev, N. A.;
Shek, E. I.;
Emel’yanov, A. M.;
Vdovin, V. I.;
Yugova, T. G.

Publication type:

Article

Influence of the orientation of the silicon substrate on the properties of avalanche Si:Er:O light-emitting structures.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 613, doi. 10.1134/1.1187739

By:

Sobolev, N. A.;
Nikolaev, Yu. A.;
Emel’yanov, A. M.;
Vdovin, V. I.

Publication type:

Article

Mechanisms of excitation of the f-f emission in silicon codoped with erbium and oxygen.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 616, doi. 10.1134/1.1187740

By:

Masterov, V. F.;
Gerchikov, L. G.

Publication type:

Article

Mechanism of erbium electroluminescence in hydrogenated amorphous silicon.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 622, doi. 10.1134/1.1187741

By:

Bresler, M. S.;
Gusev, O. B.;
Pak, P. E.;
Terukov, E. I.;
Tséndin, K. D.;
Yassievich, I. N.

Publication type:

Article

Effect of annealing on the optical and structural properties of GaN:Er.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 624, doi. 10.1134/1.1187742

By:

Sobolev, N. A.;
Lundin, V. V.;
Sakharov, V. I.;
Serenkov, I. T.;
Usikov, A. S.;
Emel’yanov, A. M.

Publication type:

Article

Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 627, doi. 10.1134/1.1187743

By:

Gippius, A. A.;
Konnov, V. M.;
Dravin, V. A.;
Loıko, N. N.;
Kazakov, I. P.;
Ushakov, V. V.

Publication type:

Article

Photothermoacoustic and photoelectric microscopy of silicon.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 630, doi. 10.1134/1.1187744

By:

Burbelo, R. M.;
Kuz’mich, A. G.;
Kucherov, I. Ya.

Publication type:

Article

Radiation-thermal activation of silicon implanted in gallium arsenide.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 636, doi. 10.1134/1.1187745

By:

Ardyshev, V. M.;
Surzhikov, A. P.

Publication type:

Article

Photoionization of short-range acceptor states in uniaxially deformed semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 640, doi. 10.1134/1.1187746

By:

Abramov, A. A.;
Tulupenko, V. N.;
Vas’ko, V. T.;
Firsov, D. A.

Publication type:

Article

Electric and luminescence properties of GaAs–A[sup II]B[sup IV]C[sub 2][sup V] single crystals.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 645, doi. 10.1134/1.1187747

By:

Polushina, I. K.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 648, doi. 10.1134/1.1187748

By:

Lyapilin, I. I.;
Bikkin, Kh. M.

Publication type:

Article

Scanning tunneling microscopy investigation of the microtopography of SiO[sub 2] and Si surfaces at the Si/SiO[sub 2] interface in SIMOX structures.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 654, doi. 10.1134/1.1187749

By:

Vyalykh, D. V.;
Fedoseenko, S. I.

Publication type:

Article

Reconstruction and electron states of a Ga[sub 2]Se[sub 3]–GaAsheterointerface.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 658, doi. 10.1134/1.1187750

By:

Agapov, B. L.;
Bezryadin, N. N.;
Kotov, G. I.;
Sumets, M. P.;
Arsent’ev, I. N.

Publication type:

Article

Sulfide passivation of GaAs power diodes.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 662, doi. 10.1134/1.1187751

By:

Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Konenkova, E. V.

Publication type:

Article

Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 665, doi. 10.1134/1.1187752

By:

Bezryadin, N. N.;
Domashevskaya, É. P.;
Kotov, G. I.;
Kuz’menko, R. V.;
Sumets, M. P.;
Arsent’ev, I. N.

Publication type:

Article

Deep-level recombination spectroscopy in GaP light-emitting diodes.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 668, doi. 10.1134/1.1187753

By:

Bulyarskiı, S. V.;
Vorob’ev, M. O.;
Grushko, N. S.;
Lakalin, A. V.

Publication type:

Article

Influence of temperature on the spectral composition of the breakdown electroluminescence of silicon carbide p-n structures.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 672, doi. 10.1134/1.1187754

By:

Belous, M. V.;
Genkin, A. M.;
Genkina, V. K.

Publication type:

Article

Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 677, doi. 10.1134/1.1187755

By:

Tsyrlin, G. É.;
Petrov, V. N.;
Masalov, S. A.;
Golubok, A. O.

Publication type:

Article

Dimensionality effects in the hot-electron photoluminescence of gallium arsenide: 2D–quasi-3D transition.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 681, doi. 10.1134/1.1187756

By:

Sapega, V. F.;
Perel’, V. I.;
Mirlin, D. N.;
Akimov, I. A.;
Ruf, T.;
Cardona, M.;
Winter, W.;
Eberl, K.

Publication type:

Article

Effect of substrate material on the rate of growth and the optical parameters of a-C : H layers.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 684, doi. 10.1134/1.1187757

By:

Zvonareva, T. K.;
Sharonova, L. V.

Publication type:

Article

Photosensitivity of GaAlAs/GaAs heterophotoelements in linearly polarized light.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 689

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Khvostikov, V. P.

Publication type:

Article

Increasing the power of broad-waveguide lasers by additional selection of transverse modes.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 693, doi. 10.1134/1.1187759

By:

Kostko, I. A.;
Evtikhiev, V. P.;
Kotel’nikov, E. Yu.;
Zegrya, G. G.

Publication type:

Article

Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 700, doi. 10.1134/1.1187760

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

In Memory of Vadim Fedorovich Masterov.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 704, doi. 10.1134/1.1187761

By:

Schippnick, Paul F.

Publication type:

Article