Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 2

Results: 20

Deep level centers in silicon carbide: A review.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 107, doi. 10.1134/1.1187657

By:

Lebedev, A. A.

Publication type:

Article

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 131, doi. 10.1134/1.1187658

By:

Andreev, A. Yu.;
Andreev, B. A.;
Drozdov, M. N.;
Krasil’nik, Z. F.;
Stepikhova, M. V.;
Shmagin, V. B.;
Kuznetsov, V. P.;
Rubtsova, R. A.;
Uskova, E. A.;
Karpov, Yu. A.;
Ellmer, H.;
Palmetshofer, L.;
Piplits, K.;
Hutter, H.

Publication type:

Article

Evidence for [variant_greek_epsilon][sub 2]-conductivity in the magnetoresistance of multivalley semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 135, doi. 10.1134/1.1187659

By:

Agrinskaya, N. V.;
Kozub, V. I.;
Polyanskaya, T. A.;
Saidov, A. S.

Publication type:

Article

Hot-carrier far infrared emission in silicon.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 143, doi. 10.1134/1.1187660

By:

Kosyachenko, L. A.;
Mazur, M. P.

Publication type:

Article

Bragg reflectors for cylindrical waves.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 147, doi. 10.1134/1.1187661

By:

Nikolaev, V. V.;
Sokolovskiı, G. S.;
Kaliteevskiı, M. A.

Publication type:

Article

Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 177, doi. 10.1134/1.1187888

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Weiser, G.;
Kuehne, H.

Publication type:

Article

Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 216, doi. 10.1134/1.1187673

By:

Andreev, I. A.;
Kunitsyna, E. V.;
Mikhaılova, M. P.;
Yakovlev, Yu. P.

Publication type:

Article

Gain in injection lasers based on self-organized quantum dots.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 184, doi. 10.1134/1.1187668

By:

Kovsh, A. R.;
Zhukov, A. E.;
Egorov, A. Yu.;
Ustinov, V. M.;
Ledentsov, N. N.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Kop’ev, P. S.

Publication type:

Article

Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 153, doi. 10.1134/1.1187662

By:

Zhukov, A. E.;
Kovsh, A. R.;
Egorov, A. Yu.;
Maleev, N. A.;
Ustinov, V. M.;
Volovik, B. V.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Shernyakov, Yu. M.;
Lunev, A. V.;
Musikhin, Yu. G.;
Bert, N. A.;
Kop’ev, P. S.;
Alferov, Zh. I.

Publication type:

Article

Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 157, doi. 10.1134/1.1187663

By:

Sobolev, M. M.;
Kovsh, A. R.;
Ustinov, V. M.;
Egorov, A. Yu.;
Zhukov, A. E.;
Musikhin, Yu. G.

Publication type:

Article

Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 165, doi. 10.1134/1.1187664

By:

Zhukov, A. E.;
Egorov, A. Yu.;
Kovsh, A. R.;
Ustinov, V. M.;
Ledentsov, N. N.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Volovik, B. V.;
Kop’ev, P. S.;
Alferov, Zh. I.

Publication type:

Article

Optical properties of porous silicon layers processed with a HF:HCl:C[sub 2]H[sub 5]OH electrolyte.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 169, doi. 10.1134/1.1187665

By:

Belogorokhov, A. I.;
Belogorokhova, L. I.

Publication type:

Article

Conductivity of structures based on doped nanocrystalline SnO[sub 2] films with gold contacts.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 175, doi. 10.1134/1.1187666

By:

Akimov, B. A.;
Gas’kov, A. M.;
Podguzova, S. E.;
Rumyantseva, M. N.;
Ryabova, L. I.;
Labeau, M.;
Tadeev, A.

Publication type:

Article

Transport properties and photosensitivity of metal/porous-silicon/c-Si structures.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 180, doi. 10.1134/1.1187667

By:

Yarkin, D. G.

Publication type:

Article

Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 192, doi. 10.1134/1.1187669

By:

Kovalev, A. N.;
Manyakhin, F. I.;
Kudryashov, V. E.;
Turkin, A. N.;
Yunovich, A. É.

Publication type:

Article

Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 200, doi. 10.1134/1.1187670

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 206, doi. 10.1134/1.1187671

By:

Danilova, T. N.;
Zhurtanov, B. E.;
Zakgeım, A. L.;
Il’inskaya, N. D.;
Imenkov, A. N.;
Saraev, O. N.;
Sipovskaya, M. A.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 210, doi. 10.1134/1.1187672

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484–487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a...

Published in:

1999

By:

Bronevoı, I. L.;
Krivonosov, A. N.

Publication type:

Erratum

Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)].

Published in:

1999

By:

Katsavets, N. I.;
Laws, G. M.;
Harrison, I.;
Larkins, E. C.;
Benson, T. M.;
Cheng, T. S.;
Foxon, C. T.

Publication type:

Correction Notice