Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 2

Results: 20

Deep level centers in silicon carbide: A review.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 107, doi. 10.1134/1.1187657
By:
- Lebedev, A. A.
Publication type:
Article
Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 131, doi. 10.1134/1.1187658
By:
- Andreev, A. Yu.;
- Andreev, B. A.;
- Drozdov, M. N.;
- Krasil’nik, Z. F.;
- Stepikhova, M. V.;
- Shmagin, V. B.;
- Kuznetsov, V. P.;
- Rubtsova, R. A.;
- Uskova, E. A.;
- Karpov, Yu. A.;
- Ellmer, H.;
- Palmetshofer, L.;
- Piplits, K.;
- Hutter, H.
Publication type:
Article
Evidence for [variant_greek_epsilon][sub 2]-conductivity in the magnetoresistance of multivalley semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 135, doi. 10.1134/1.1187659
By:
- Agrinskaya, N. V.;
- Kozub, V. I.;
- Polyanskaya, T. A.;
- Saidov, A. S.
Publication type:
Article
Hot-carrier far infrared emission in silicon.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 143, doi. 10.1134/1.1187660
By:
- Kosyachenko, L. A.;
- Mazur, M. P.
Publication type:
Article
Bragg reflectors for cylindrical waves.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 147, doi. 10.1134/1.1187661
By:
- Nikolaev, V. V.;
- Sokolovskiı, G. S.;
- Kaliteevskiı, M. A.
Publication type:
Article
Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 153, doi. 10.1134/1.1187662
By:
- Zhukov, A. E.;
- Kovsh, A. R.;
- Egorov, A. Yu.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Volovik, B. V.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Shernyakov, Yu. M.;
- Lunev, A. V.;
- Musikhin, Yu. G.;
- Bert, N. A.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 157, doi. 10.1134/1.1187663
By:
- Sobolev, M. M.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Musikhin, Yu. G.
Publication type:
Article
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 165, doi. 10.1134/1.1187664
By:
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Optical properties of porous silicon layers processed with a HF:HCl:C[sub 2]H[sub 5]OH electrolyte.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 169, doi. 10.1134/1.1187665
By:
- Belogorokhov, A. I.;
- Belogorokhova, L. I.
Publication type:
Article
Conductivity of structures based on doped nanocrystalline SnO[sub 2] films with gold contacts.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 175, doi. 10.1134/1.1187666
By:
- Akimov, B. A.;
- Gas’kov, A. M.;
- Podguzova, S. E.;
- Rumyantseva, M. N.;
- Ryabova, L. I.;
- Labeau, M.;
- Tadeev, A.
Publication type:
Article
Influence of the substrate temperature and annealing on the 1.54-μm erbium photoluminescence of a-Si:H films obtained using a glow discharge.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 177, doi. 10.1134/1.1187888
By:
- Terukov, E. I.;
- Kon’kov, O. I.;
- Kudoyarova, V. Kh.;
- Gusev, O. B.;
- Weiser, G.;
- Kuehne, H.
Publication type:
Article
Transport properties and photosensitivity of metal/porous-silicon/c-Si structures.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 180, doi. 10.1134/1.1187667
By:
- Yarkin, D. G.
Publication type:
Article
Gain in injection lasers based on self-organized quantum dots.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 184, doi. 10.1134/1.1187668
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Kop’ev, P. S.
Publication type:
Article
Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 192, doi. 10.1134/1.1187669
By:
- Kovalev, A. N.;
- Manyakhin, F. I.;
- Kudryashov, V. E.;
- Turkin, A. N.;
- Yunovich, A. É.
Publication type:
Article
Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operating in the 3.0 to 3.6-μm spectral range.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 200, doi. 10.1134/1.1187670
By:
- Aıdaraliev, M.;
- Zotova, N. V.;
- Karandashev, S. A.;
- Matveev, B. A.;
- Remennyı, M. A.;
- Stus’, N. M.;
- Talalakin, G. N.
Publication type:
Article
High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 206, doi. 10.1134/1.1187671
By:
- Danilova, T. N.;
- Zhurtanov, B. E.;
- Zakgeım, A. L.;
- Il’inskaya, N. D.;
- Imenkov, A. N.;
- Saraev, O. N.;
- Sipovskaya, M. A.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 210, doi. 10.1134/1.1187672
By:
- Danilova, A. P.;
- Danilova, T. N.;
- Imenkov, A. N.;
- Kolchanova, N. M.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Long-wavelength photodiodes based on Ga[sub 1-x]In[sub x]As[sub y]Sb[sub 1-y] with composition near the miscibility boundary.
Published in:
Semiconductors, 1999, v. 33, n. 2, p. 216, doi. 10.1134/1.1187673
By:
- Andreev, I. A.;
- Kunitsyna, E. V.;
- Mikhaılova, M. P.;
- Yakovlev, Yu. P.
Publication type:
Article
Erratum: Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs [Semiconductors 32, 484–487 (May 1998)]; Stimulated-emission spectrum arising from interband absorption of a...
Published in:
1999
By:
- Bronevoı, I. L.;
- Krivonosov, A. N.
Publication type:
Erratum
Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, 1048–1053 (October 1998)].
Published in:
1999
By:
- Katsavets, N. I.;
- Laws, G. M.;
- Harrison, I.;
- Larkins, E. C.;
- Benson, T. M.;
- Cheng, T. S.;
- Foxon, C. T.
Publication type:
Correction Notice