Works matching IS 10637826 AND DT 1999 AND VI 33 AND IP 1

Results: 24

Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 101, doi. 10.1134/1.1187656

By:

Aleksandrov, O. V.;
Nikolaev, Yu. A.;
Sobolev, N. A.

Publication type:

Article

Self-compensation in PbSe:Tl thin films.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 22, doi. 10.1134/1.1187641

By:

Zykov, V. A.;
Gavrikova, T. A.;
Nemov, S. A.;
Osipov, P. A.

Publication type:

Article

Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 6, doi. 10.1134/1.1187637

By:

Akimov, B. A.;
Bogoyavlenskiı, V. A.;
Ryabova, L. I.;
Vasil’kov, V. N.;
Slyn’ko, E. I.

Publication type:

Article

Vertical screening in doped, intentionally disordered semiconductor superlattices.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 69, doi. 10.1134/1.1187649

By:

Zvyagin, I. P.;
Ormont, M. A.

Publication type:

Article

Influence of the energy transport of electrons by optical phonon emission on the superluminescence and reversible bleaching of a thin GaAs layer excited by a strong picosecond light pulse.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 10, doi. 10.1134/1.1187638

By:

Bronevoı, I. L.;
Krivonosov, A. N.

Publication type:

Article

Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 1, doi. 10.1134/1.1187636

By:

Davydov, V. Yu.;
Lundin, V. V.;
Smirnov, A. N.;
Sobolev, N. A.;
Usikov, A. S.;
Emel’yanov, A. M.;
Makoviıchuk, M. I.;
Parshin, E. O.

Publication type:

Article

Fano effect in the magnetoabsorption spectra of gallium arsenide.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 15, doi. 10.1134/1.1187639

By:

Vasilenko, D. V.;
Luk’yanova, N. V.;
Seısyan, R. P.

Publication type:

Article

Correlation between the material parameters and conditions for the excitation of recombination waves in Si<S>.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 20, doi. 10.1134/1.1187640

By:

Bakhadyrkhanov, M. K.;
Kurbanova, U. Kh.;
Zikrillaev, N. F.

Publication type:

Article

Radiative tunneling recombination and luminescence of trapezoidal δ-doped superlattices.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 89, doi. 10.1134/1.1187653

By:

Osipov, V. V.;
Selyakov, A. Yu.;
Foygel, M.

Publication type:

Article

Electronic structure of C[sub 60] films.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 26, doi. 10.1134/1.1187642

By:

Sobolev, V. V.;
Busypina, E. L.

Publication type:

Article

Quasi-gapless semiconductor: p-type indium arsenide.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 31, doi. 10.1134/1.1187889

By:

Daunov, M. I.;
Kamilov, I. K.;
Magomedov, A. B.;
Kirakosyan, A. Sh.

Publication type:

Article

Optical absorption in PbGa[sub 2]Se[sub 4] single crystals.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 34, doi. 10.1134/1.1187643

By:

Tagiev, B. G.;
Musaeva, N. N.;
Dzhabbarov, R. B.

Publication type:

Article

Characteristic features of the temperature dependence of the photoluminescence polarization of {Ga vacancy}–Sn[sub Ga](Si[sub Ga]) complexes in GaAs produced as a result of resonant polarized excitation.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 37, doi. 10.1134/1.1187644

By:

Gutkin, A. A.;
Reshchikov, M. A.;
Sedov, V. E.

Publication type:

Article

Photoconductivity spectra of CdHgTe crystals with photoactive inclusions.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 41, doi. 10.1134/1.1187645

By:

Vlasenko, A. I.;
Vlasenko, Z. K.;
Lyubchenko, A. V.

Publication type:

Article

Theory of photovoltaic effects in crystals without an inversion center.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 45, doi. 10.1134/1.1187646

By:

Rasulov, R. Ya.;
Salenko, Yu. E.;
Tukhtamatov, A.;
Éski, T.;
Avliyaev, A. É.

Publication type:

Article

Ultrashallow p[sup +]-n junctions in Si(111): electron-beam diagnostics of the surface region.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 51, doi. 10.1134/1.1187647

By:

Bagraev, N. T.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Andronov, A. A.;
Robozerov, S. V.

Publication type:

Article

Investigating the photosensitivity spectra of n-type GaAs–As[sub 2]Se[sub 3] heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 56, doi. 10.1134/1.1187899

By:

Arzhanukhina, I. P.;
Kornev, K. P.;
Seleznev, U. V.

Publication type:

Article

Charging of deep-level centers and negative persistent photoconductivity in modulation-doped AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 60, doi. 10.1134/1.1187648

By:

Borisov, V. I.;
Sablikov, V. A.;
Borisova, I. V.;
Chmil’, A. I.

Publication type:

Article

Conductivity of thin nanocrystalline silicon films.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 66, doi. 10.1134/1.1187635

By:

Golubev, V. G.;
Morozova, L. E.;
Pevtsov, A. B.;
Feoktistov, N. A.

Publication type:

Article

Optical intersubband transitions in strained quantum wells utilizing In[sub 1-x]Ga[sub x]As/InP solid solutions.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 72, doi. 10.1134/1.1187650

By:

Stoklitskiı, S. A.;
Murzin, V. N.;
Mityagin, Yu. A.;
Monemar, B.;
Holtz, P. O.

Publication type:

Article

Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 80, doi. 10.1134/1.1187651

By:

Zhen, Zhao;
Bedarev, D. A.;
Volovik, B. V.;
Ledentsov, N. N.;
Lunev, A. V.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Egorov, A. Yu.;
Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Kop’ev, P. S.

Publication type:

Article

Nonradiative recombination at shallow bound states in quantum-confined systems in an electric field.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 85, doi. 10.1134/1.1187652

By:

Sinyavskiı, É. P.;
Rusanov, A. M.

Publication type:

Article

Influence of thermal annealing on the intensity of the 1.54-μm photoluminescence band in erbium-doped amorphous hydrogenated silicon.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 93, doi. 10.1134/1.1187654

By:

Andreev, A. A.;
Voronkov, V. B.;
Golubev, V. G.;
Medvedev, A. V.;
Pevtsov, A. B.

Publication type:

Article

Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity.

Published in:

Semiconductors, 1999, v. 33, n. 1, p. 97, doi. 10.1134/1.1187655

By:

Golikova, O. A.;
Kazanin, M. M.

Publication type:

Article