Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 9

Results: 26

Photocurrent amplification in AulSiO2/n-6H-SiC MOS structures with a tunnel-thin insulator

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1024, doi. 10.1134/1.1187538

By:

Grekhov, I. V.;
Veksler, M. I.;
Ivanov, P. A.;
Samsonova, T. P.;
Shulekin, A. F.

Publication type:

Article

Spectral and mode characteristics of InAsSbP/InAsSbllnAsSbP lasers in the spectral region near 3.3 um

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1019, doi. 10.1134/1.1187537

By:

Popov, A. A.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Use of two low-temperature emitters to determine the cutoff wavelength of the photosensitivity of infrared photodetectors

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1015

By:

Vasil'ev, V. V.;
Mashukov, Yu. P.

Publication type:

Article

Charge limit effects in emission from GaAs photocathodes at high optical excitation intensities '

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1006, doi. 10.1134/1.1187535

By:

Reznikov, B. I.;
Subashiev, A. V.

Publication type:

Article

Composition and porosity of multicomponent structures: porous silicon as a three-component system

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1003, doi. 10.1134/1.1187534

By:

Belyakov, L. V.;
Makarova, T. L.;
Sakharov, V. I.;
Serenkov, I. T.;
Sreseli, O. M.

Publication type:

Article

Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AIGaAs structure

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 1001

By:

IvYnov, Yu. L.;
Morozov, S. A.;
Ustinov, V. M.;
Zhukov, A. E.

Publication type:

Article

Effect of the quantum-dot surface density in the active region on injection-laser characteristics

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 997, doi. 10.1134/1.1187532

By:

Kovsh, A. R.;
Zhukov, A. E.;
Egorov, A. Yu.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Maksimov, M. V.;
Tsatsul'nikov, A. F.;
Volovik, B. V.;
Lunev, A. V.;
Ledentsov, N. N.;
Kop'ev, P.S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Energy spectrum of a nonideal quantum well in an electric field

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 992, doi. 10.1134/1.1187531

By:

Lazarenkova, O. L.;
Pikhtin, A. N.

Publication type:

Article

Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 975, doi. 10.1134/1.1187528

By:

Karpovich, I. A.;
Anshon, A. V.;
Filatov, D. O.

Publication type:

Article

Weak-field magnetoresistance of two-dimensional electrons in Ino.s3Ga0.47As/InP heterostructures in the persistent photoconductivity regime

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 985, doi. 10.1134/1.1187530

By:

Bykanov, D. D.;
Kreshchuk, A. M.;
Novikov, S. V.;
Polyanskaya, T. A.;
Savel'ev, I. G.

Publication type:

Article

The effect of a nonmonotonic potential profile on edge magnetic states

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 970, doi. 10.1134/1.1187527

By:

Gorokhov, E. B.;
Romanov, D. A.;
Studenikin, S. A.;
Tkachenko, V. A.;
Tkachenko, O. A.

Publication type:

Article

Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 980, doi. 10.1134/1.1187529

By:

Grinyaev, S. N.;
Chaldyshev, V. A.

Publication type:

Article

Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 966, doi. 10.1134/1.1187526

By:

Gadiyak, G. V.;
Stathis, J. H.

Publication type:

Article

Determining surface recombination rates in epitaxial layers of n-CdxHg1_xTe from measurements of the planar magnetoresistance and relaxation times for nonequilibrium charge carriers

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 963, doi. 10.1134/1.1187525

By:

Borodovskii, P. A.;
Buldygin, A. F.;
Varavin, V. S.

Publication type:

Article

Current transport in porous p-Si and Pd-porous Si structures

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 960, doi. 10.1134/1.1187524

By:

Slobodchikov, S. V.;
Salikhov, Kh. M.;
Russu, E. V.

Publication type:

Article

Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 957, doi. 10.1134/1.1187523

By:

Min'kov, G. M.;
Germanenko, A. V.;
Rut, O. E.

Publication type:

Article

Mobility of charge carriers in double-layer PbTe/PbS structures

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 953, doi. 10.1134/1.1187522

By:

Aleksandrova, O. A.;
Bondokov, R. Ts.;
Saunin, I. V.;
Tairov, Yu. M.

Publication type:

Article

Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 950, doi. 10.1134/1.1187521

By:

Mokerov, V. G.;
Fedorov, Yu. V.;
Guk, A. V.;
Galiev, G. B.;
Strakhov, V. A.;
Yaremenko, N. G.

Publication type:

Article

Pressure dependence of the dielectric and optical properties of wide-gap semiconductors

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 947, doi. 10.1134/1.1187520

By:

Davydov, S. Yu.;
Tikhonov, S. K.

Publication type:

Article

The effect of antisite defects on the band structure and dielectric function of In1_xGaxSb solid solutions

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 944, doi. 10.1134/1.1187519

By:

Deibuk, V. G.;
Studenets, V. I.

Publication type:

Article

Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment.

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 939, doi. 10.1134/1.1187518

By:

Neimash, V. B.;
Siratskii, V. M.;
Kraichinskii, A. N.;
Puzenko, E. A.

Publication type:

Article

Optical reflection in Pb0.78Sn0.22Te doped to 3 at.% with indium

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 937, doi. 10.1134/1.1187517

By:

Veis, A. N.;
Nemov, S. A.

Publication type:

Article

Physical properties of CuxAgl_xlnsS8 single crystals and related surface-barrier structures

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 933

By:

Bodnar, I. V.;
Kudritskaya, E. A.;
Polushina, I. K.;
Rud, V. Yu.;
Rud, Yu. V.

Publication type:

Article

Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 924, doi. 10.1134/1.1187516

By:

Ordin, S. V.;
Sharupin, B. N.;
Fedorov, M. I.

Publication type:

Article

Formation of donor centers upon annealing of dysprosium- and holmium-implanted silicon

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 921, doi. 10.1134/1.1187515

By:

Aleksandrov, O. V.;
Zakhar'in, A. O.;
Sobolev, N. A.;
Shek, E. I.;
Makoviichuk, M. I.;
Parshin, E. O.

Publication type:

Article

Correlation between the temperature dependence of the band gap and the temperature dependence of the enthalpy of semiconductor crystals

Published in:

Semiconductors, 1998, v. 32, n. 9, p. 917, doi. 10.1134/1.1187514

By:

Revinskii, A. F.

Publication type:

Article