Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 7

Results: 27

Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 um
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 795, doi. 10.1134/1.1187509
By:
- Zhukov, A. E.;
- Egoroy, A. Yu.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Zaitsev, S. V.;
- Gordeev, N. Yu.;
- Kopchatov, V. I.;
- Lunev, A. V.;
- Tsatsul'nikov, A. F.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Kop'ev, P.S.
Publication type:
Article
Pulsed investigations of diode structures based on silicon-hydrogen films
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 792, doi. 10.1134/1.1187508
By:
- Belov, S. V.;
- Lebedev, A. A.
Publication type:
Article
Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p-n junctions
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 789, doi. 10.1134/1.1187507
By:
- Voronkov, V. B.;
- Guk, E.G.;
- Kozlov, V. A.;
- Shvarts, M. Z.;
- Shuman, V. B.
Publication type:
Article
Temperature dependence of the reverse current in Schottky barrier diodes
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 785, doi. 10.1134/1.1187506
By:
- Pipinis, P. A.;
- Rimeika, A. K.;
- Lapeika, V. A.
Publication type:
Article
Effect of deposition and annealing conditions on the optical properties of amorphous silicon
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 782, doi. 10.1134/1.1187505
By:
- Mashin, A. I.;
- Ershov, A. V.;
- Khokhlov, D. A.
Publication type:
Article
Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 779, doi. 10.1134/1.1187504
By:
- Golikova, O. A.;
- Kudoyarova, V. Kh.
Publication type:
Article
Scattering of hot electrons by neutral acceptors in GaAs/AIAs quantum well structures
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 770, doi. 10.1134/1.1187503
By:
- Mirlin, D. N.;
- Perel, V. I.;
- Reshina, I. I.
Publication type:
Article
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 765, doi. 10.1134/1.1187502
By:
- Evtikhiev, V. P.;
- Tokranov, V. E.;
- Kryzhanovskii, A. K.;
- Boiko, A.M.;
- Surls, R. A.;
- Titkov, A. N.;
- Nakamura, A.;
- Ichida, M.
Publication type:
Article
Light absorption in aperiodic PbS/C superlattices in an electric field
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 762, doi. 10.1134/1.1187501
By:
- Musikhin, S. F.;
- II'in, V. I.;
- Rabizo, O. V.;
- Bakueva, L. G.;
- Sharonova, L. V.
Publication type:
Article
Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 757
By:
- Vorob'ev, L. E.;
- Titkov, I. E.;
- Toropov, A. A.;
- Tulupenko, V. N.;
- Firsov, D. A.;
- Shalygin, V. A.;
- Shubina, T. V.;
- Towe, E.
Publication type:
Article
Modulation of optical absorption of GaAs/AIGaAs quantum wells in a transverse electric field
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 754
By:
- Vorob'ev, L. E.;
- Zibik, E. A.;
- Firsoy, D. A.;
- Shalygin, V. A.;
- Nashchekina, O. N.;
- Saidashev, I. I.
Publication type:
Article
Theoretical study of the threshold characteristics of InGaN multiquantum well lasers
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 749, doi. 10.1134/1.1187498
By:
- Zegrya, G. G.;
- Gun'ko, N. A.
Publication type:
Article
Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 745, doi. 10.1134/1.1187497
By:
- Reshina, I. I.;
- Planel, R.
Publication type:
Article
Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 739, doi. 10.1134/1.1187496
By:
- Andreev, A. N.;
- Rastegaeva, M. G.;
- Rastegaev, V. P.;
- Reshanov, S. A.
Publication type:
Article
Photovoltaic effect in In/I-IIl-V12-thin-film surface-barrier structures
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 736
By:
- Rud, V. Yu.;
- Rud, Yu. V.;
- Bodnar, I. V.;
- Gremenok, V. F.;
- Obraztsova, O. S.;
- Sergeev-Nekrasov, S. L.
Publication type:
Article
Preparation and properties of GeS2 single crystals
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 734, doi. 10.1134/1.1187494
By:
- Golubkov, A. V.;
- Dubrovskii, G. B.;
- Shelykh, A. I.
Publication type:
Article
Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 729, doi. 10.1134/1.1187493
By:
- Jandieri, K. M.;
- Kachlishvili, V. S.
Publication type:
Article
Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 720, doi. 10.1134/1.1187492
By:
- Alekseenko, M. V.;
- Zabrodskii, A. G.;
- Shterengas, L. M.
Publication type:
Article
Donorlike behavior of rare-earth impurities in PbTe
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 716, doi. 10.1134/1.1187491
By:
- Alekseeva, G. T.;
- Vedemikov, M. V.;
- Gurieva, E. A.;
- Konstantinov, P. P.;
- Prokof'eva,, L. V.;
- Ravich, Yu. I.
Publication type:
Article
Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 714, doi. 10.1134/1.1187490
By:
- Kazakova, L. P.;
- Lebedev, E. A.
Publication type:
Article
Calculation of the energy levels of shallow acceptors in unlaxially strained germanium
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 711, doi. 10.1134/1.1187489
By:
- Odnoblyudov, M. A.;
- Chistyakov, V. M.
Publication type:
Article
Properties of manganese-doped gallium arsenide layers grown by liquid phase epitaxy from a bismuth melt
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 704, doi. 10.1134/1.1187488
By:
- Zhuravlev, K. S.;
- Shamirzaev, T. S.;
- Yakusheva, N. A.
Publication type:
Article
Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 700, doi. 10.1134/1.1187487
By:
- Darchuk, S. D.;
- Dietl, T.;
- Korovina, L. A.;
- Kolesnik, S.;
- Sawicki, M.;
- Sizov, F. F.
Publication type:
Article
Stabilization of the physical properties of Cdx,Hg1-xSe solid solutions doped with iron
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 696, doi. 10.1134/1.1187486
By:
- Romanyuk, O. S.;
- Paranchich, S. Yu.;
- Paranchich, L. D.;
- Makogonenko, V. N.
Publication type:
Article
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
By:
- Chaldyshev, V. V.;
- Kunitsyn, A. E.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Tret'yakov, V. V.;
- Faleev, N. N.
Publication type:
Article
Features of the electrical compensation of bismuth impurities in PbSe
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 689, doi. 10.1134/1.1187484
By:
- Nemov, S. A.;
- Gavrikova, T. A.;
- Zykov, V. A.;
- Osipov, P. A.;
- Proshin, V. I.
Publication type:
Article
Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.
Published in:
Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483
By:
- Bert, N. A.;
- Musikhin, Yu. G.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Suvorova, A. A.;
- Chaldyshev, V. V.;
- Werner, R.
Publication type:
Article