Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 8

Results: 23

Synthesis and properties of Ge–Sb–S: NdCl[sub 3] glasses.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 812

By:

Frumarová, B.;
Nemec, P.;
Frumar, M.;
Oswald, J.

Publication type:

Article

Laser-induced anisotropic absorbtion, reflection, and scattering of light in chalcogenide glassy semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 817, doi. 10.1134/1.1187513

By:

Lyubin, V. M.;
Klebanov, M. L.

Publication type:

Article

Phase transitions occurring in glassy chalcogenide semiconductors induced by electric field or laser pulses.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 838, doi. 10.1134/1.1187469

By:

Lebedev, É. A.;
Tséndin, K. D.

Publication type:

Article

Modeling of hypervalent configurations, valence alternation pairs, deformed structure, and properties of a-S and a-As[sub 2]S[sub 3].

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 843, doi. 10.1134/1.1187470

By:

Dembovskiı, S. A.;
Zyubin, A. S.;
Grigor’ev, F. V.

Publication type:

Article

Nanoscale mechanism of photoinduced metastability and reversible photodarkening in chalcogenide vitreous semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 801, doi. 10.1134/1.1187510

By:

Kolobov, A. V.;
Tanaka, K.

Publication type:

Article

In memory of Boris Timofeevich Kolomiets (on the 90th anniversary of his birth).

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 799

By:

Schippnick, Paul F.

Publication type:

Article

Toward understanding the photoinduced changes in chalcogenide glasses.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 850, doi. 10.1134/1.1187471

By:

Fritzsche, H.

Publication type:

Article

Transport properties of microcrystalline silicon at low temperatures.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 807, doi. 10.1134/1.1187511

By:

Zhou, J.-H.;
Baranovskii, S. D.;
Yamasaki, S.;
Ikuta, K.;
Kondo, M.;
Matsuda, A.;
Tanaka, K.

Publication type:

Article

Plasma-enhanced chemical vapor deposition and structural characterization of amorphous chalcogenide films.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 855, doi. 10.1134/1.1187472

By:

Nagels, P.

Publication type:

Article

Photoinduced structural changes in amorphous semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 861, doi. 10.1134/1.1187473

By:

Tanaka, K.

Publication type:

Article

Recombination in hydrogenated amorphous silicon.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 824, doi. 10.1134/1.1187467

By:

Koughia, K. V.;
Terukov, E. I.;
Fuhs, V.

Publication type:

Article

Modification of the electron spectrum and vibrational properties of amorphous carbon by copper doping.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 831, doi. 10.1134/1.1187468

By:

Ivanov-Omskiı, V. I.;
Smorgonskaya, É. A.

Publication type:

Article

Chalcogenide glasses in optoelectronics.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 867, doi. 10.1134/1.1187474

By:

Andriesh, A. M.

Publication type:

Article

Multimode nature and magnetophonon resonance of quaternary solid solutions of zinc, cadmium, and mercury tellurides.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 901, doi. 10.1134/1.1187481

By:

Sheregiı, E. M.;
Cebulski, J.;
Polit, J.;
Ivanov-Omskiı, V. I.;
Gebicki, W.

Publication type:

Article

Copper-induced changes in the properties of arsenic chalcogenides.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 873

By:

Bollé, N.;
Hertogen, P.;
Adriaenssens, G. J.;
Sénémaud, C.;
Gheorghiu-de La Rocque, A.

Publication type:

Article

Doping in metal chalcogenide glasses.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 879, doi. 10.1134/1.1187476

By:

Girlani, S. A.;
Yan, B.;
Taylor, P. C.

Publication type:

Article

Ion implantation of porous gallium phosphide.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478

By:

Ushakov, V. V.;
Dravin, V. A.;
Mel’nik, N. N.;
Zavaritskaya, T. V.;
Loıko, N. N.;
Karavanskiı, V. A.;
Konstantinova, E. A.;
Timoshenko, V. Yu.

Publication type:

Article

Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 884, doi. 10.1134/1.1187477

By:

Terukov, E. I.;
Kon’kov, O. I.;
Kudoyarova, V. Kh.;
Gusev, O. B.;
Weiser, G.

Publication type:

Article

Light absorption and photoluminescence of porous silicon.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 896, doi. 10.1134/1.1187480

By:

Obraztsov, A. N.;
Karavanskiı, V. A.;
Okushi, H.;
Watanabe, H.

Publication type:

Article

A model of photoinduced anisotropy in glassy semiconductors.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 891, doi. 10.1134/1.1187479

By:

Emel’yanova, E. V.;
Arkhipov, V. I.

Publication type:

Article

Characteristic features of the interaction of porous silicon with heavy water.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 910, doi. 10.1134/1.1187482

By:

Goryachev, D. N.;
Sreseli, O. M.;
Polisskiı, G.

Publication type:

Article

Information for Authors submitting papers for publication in the Russian language.

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 913

By:

Alferieff, M.E.

Publication type:

Article

Erratum: Diffusion saturation of undoped hydrated amorphous silicon by tin impurity [Semiconductors 32, 263–266 (March 1998)].

Published in:

Semiconductors, 1998, v. 32, n. 8, p. 916, doi. 10.1134/1.1187348

By:

Kabalbin, A. N.;
Neımash, V. B.;
Tsmots’, V. M.;
Shtym, V. S.

Publication type:

Article