Works matching AU Yankov, R. A.
Results: 11
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
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- Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
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- Article
Comparative Study of SIMOX Structures Using Four Analytical Techniques.
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- Surface & Interface Analysis: SIA, 1996, v. 24, n. 4, p. 243, doi. 10.1002/(SICI)1096-9918(199604)24:4<243::AID-SIA106>3.0.CO;2-H
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- Article
Theoretical description of high-temperature implantation of silicon carbide with N[sup +] and Al[sup +] ions.
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- Technical Physics Letters, 1998, v. 24, n. 1, p. 17, doi. 10.1134/1.1261975
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High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 617, doi. 10.1134/1.1261883
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- Article
Combined Al- plus F-treatment of Ti-alloys for improved behaviour at elevated temperatures.
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- Materials & Corrosion / Werkstoffe und Korrosion, 2011, v. 62, n. 7, p. 695, doi. 10.1002/maco.201005870
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- Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
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F-F<sub>A</sub>(Na) conversion by repetitive light pulses in additively coloured KCl crystals.
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- Physica Status Solidi (B), 1975, v. 72, n. 2, p. 779, doi. 10.1002/pssb.2220720239
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- Article
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
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- Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
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Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
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- Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
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Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions
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- Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417
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Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
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- Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
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- Article