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Optical absorption spectra and energy levels of Er<sup>3+</sup> ions in KTaO<sub>3</sub> crystals.
Published in:
Technical Physics Letters, 2009, v. 35, n. 6, p. 566, doi. 10.1134/S1063785009060248
By:
- Skvortsov, A. P.;
- Trepakov, V. A.;
- Krivolapchuk, V. V.;
- Poletaev, N. K.;
- Kapphan, S.;
- Dejneka, A.;
- Jastrabik, L.
Publication type:
Article
Chloride vapor-phase epitaxy of gallium nitride on silicon: Structural and luminescent characteristics of epilayers.
Published in:
Technical Physics Letters, 2006, v. 32, n. 8, p. 674, doi. 10.1134/S1063785006080116
By:
- Bessolov, V. N.;
- Botnaryuk, V. M.;
- Zhilyaev, Yu. V.;
- Konenkova, E. V.;
- Poletaev, N. K.;
- Raevskiĭ, S. D.;
- Rodin, S. N.;
- Smirnov, S. L.;
- Sharofidinov, Sh.;
- Shcheglov, M. P.;
- Hee Seok Park;
- Koike, Masayoshi
Publication type:
Article
Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide.
Published in:
Technical Physics Letters, 2004, v. 30, n. 10, p. 810, doi. 10.1134/1.1813717
By:
- Botnaryuk, M. V.;
- Zhilyaev, Yu. V.;
- Orlova, T. A.;
- Poletaev, N. K.;
- Fedorov, L. M.;
- Yusupova, Sh. A.
Publication type:
Article
Photoluminescence of nitro-substituted europium (III) phthalocyanines.
Published in:
Semiconductors, 2010, v. 44, n. 8, p. 1070, doi. 10.1134/S1063782610080208
By:
- Ziminov, A. V.;
- Polevaya, Yu. A.;
- Jourre, T. A.;
- Ramsh, S. M.;
- Mezdrogina, M. M.;
- Poletaev, N. K.
Publication type:
Article
The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 426, doi. 10.1134/S1063782610040032
By:
- Mezdrogina, M. M.;
- Danilevskii, E. Yu.;
- Kuz'min, R. V.;
- Poletaev, N. K.;
- Trapeznikova, I. N.;
- Chukichev, M. V.;
- Bordovskii, G. A.;
- Marchenko, A. V.;
- Eremenko, M. V.
Publication type:
Article
3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.
Published in:
Semiconductors, 2003, v. 37, n. 4, p. 482, doi. 10.1134/1.1568473
By:
- Lebedev, A. A.;
- Strel’chuk, A. M.;
- Davydov, D. V.;
- Savkina, N. S.;
- Tregubova, A. S.;
- Kuznetsov, A. N.;
- Solov’ev, V. A.;
- Poletaev, N. K.
Publication type:
Article
Effect of metastable states on the de-excitation of excitons in n-GaAs.
Published in:
Semiconductors, 1998, v. 32, n. 3, p. 277, doi. 10.1134/1.1187379
By:
- Krivolapchuk, V. V.;
- Poletaev, N. K.
Publication type:
Article
Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1161, doi. 10.1134/1.1187288
By:
- Lebedev, A. A.;
- Poletaev, N. K.;
- doKarmo, M. Z.
Publication type:
Article
Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs.
Published in:
Scientific Reports, 2015, p. 11474, doi. 10.1038/srep11474
By:
- Zaitsev, D. A.;
- Il'ynskaya, N. D.;
- Koudinov, A. V.;
- Poletaev, N. K.;
- Nikitina, E. V.;
- Egorov, A. Yu.;
- Kavokin, A. V.;
- Seisyan, R. P.
Publication type:
Article
A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC.
Published in:
Technical Physics Letters, 2019, v. 45, n. 6, p. 557, doi. 10.1134/S1063785019060117
By:
- Lebedev, A. A.;
- Nikitina, I. P.;
- Seredova, N. V.;
- Poletaev, N. K.;
- Lebedev, S. P.;
- Kozlovski, V. V.;
- Zubov, A. V.
Publication type:
Article

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