Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 3
Results: 28
Growth characteristics and physical properties of PbTe/BaF[sub 2] prepared under nonequilibrium conditions.
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- Semiconductors, 1998, v. 32, n. 3, p. 231, doi. 10.1134/1.1187395
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On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons.
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- Semiconductors, 1998, v. 32, n. 3, p. 235
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On the mechanisms of long-term relaxation of the conductivity in compensated Si<B,S> and Si<B,Rh> as a result of irradiation.
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- Semiconductors, 1998, v. 32, n. 3, p. 238, doi. 10.1134/1.1187387
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Tin telluride based thermoelectrical alloys.
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- Semiconductors, 1998, v. 32, n. 3, p. 241, doi. 10.1134/1.1187388
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Lock-in-phase analysis of n-GaAs photoreflectance spectra.
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- Semiconductors, 1998, v. 32, n. 3, p. 245
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Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence.
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- Semiconductors, 1998, v. 32, n. 3, p. 250, doi. 10.1134/1.1187389
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- Article
Low-frequency noise in n-GaN.
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- Semiconductors, 1998, v. 32, n. 3, p. 257, doi. 10.1134/1.1187374
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- Article
Equation of state of an electron gas and theory of the thermal voltage in a quantizing magnetic field.
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- Semiconductors, 1998, v. 32, n. 3, p. 261, doi. 10.1134/1.1187375
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- Article
Diffusion saturation of nondoped hydrated amorphous silicon by tin impurity.
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- Semiconductors, 1998, v. 32, n. 3, p. 263, doi. 10.1134/1.1187376
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- Article
Role of light fluctuations in the appearance of the bistability of the photocarrier distribution.
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- Semiconductors, 1998, v. 32, n. 3, p. 267, doi. 10.1134/1.1187377
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- Article
Laser-modulated epitaxy of lead telluride.
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- Semiconductors, 1998, v. 32, n. 3, p. 270, doi. 10.1134/1.1187378
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- Article
Optical properties of crystals of the solid solutions (InSb)[sub 1-x](CdTe)[sub x].
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- Semiconductors, 1998, v. 32, n. 3, p. 274, doi. 10.1134/1.1187465
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- Article
Effect of metastable states on the de-excitation of excitons in n-GaAs.
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- Semiconductors, 1998, v. 32, n. 3, p. 277, doi. 10.1134/1.1187379
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- Article
Transport phenomena in the solid solution (Pb[sub 0.78]Sn[sub 0.22])[sub 0.97]In[sub 0.03]Te in the hopping conduction region.
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- Semiconductors, 1998, v. 32, n. 3, p. 280, doi. 10.1134/1.1187466
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- Article
Local neutrality and pinning of the chemical potential in III–V solid solutions: interfaces and radiation effects.
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- Semiconductors, 1998, v. 32, n. 3, p. 284, doi. 10.1134/1.1187380
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- Article
Two- and three-dimensional conduction channels at block boundaries in (CdHg)Te mosaic crystals.
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- Semiconductors, 1998, v. 32, n. 3, p. 288, doi. 10.1134/1.1187550
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- Article
Preparation and photosensitivity of heterostructures based on anodized silicon carbide.
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- Semiconductors, 1998, v. 32, n. 3, p. 295, doi. 10.1134/1.1187349
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- Article
Properties of periodic α-Si:H/a-SiN[sub x]:H structures obtained by nitridization of amorphous-silicon layers.
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- Semiconductors, 1998, v. 32, n. 3, p. 297, doi. 10.1134/1.1187381
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- Article
Ionization of impurity centers in a semiconductor quantum superlattice by nonlinear electromagnetic waves.
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- Semiconductors, 1998, v. 32, n. 3, p. 302, doi. 10.1134/1.1187382
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- Article
Harmonics generation in quantum-size structures in a strong electromagnetic field.
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- Semiconductors, 1998, v. 32, n. 3, p. 306, doi. 10.1134/1.1187383
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- Article
Effect of the charge state of defects on the light-induced kinetics of the photoconductivity of amorphous hydrated silicon.
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- Semiconductors, 1998, v. 32, n. 3, p. 312, doi. 10.1134/1.1187384
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- Article
Effect of ion irradiation of amorphous-silicon films on their crystallization.
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- Semiconductors, 1998, v. 32, n. 3, p. 316, doi. 10.1134/1.1187385
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- Article
Photosensitivity of porous silicon–layered III–VI semiconductors heterostructures.
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- Semiconductors, 1998, v. 32, n. 3, p. 320, doi. 10.1134/1.1187558
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Magnetic-resonance spectroscopy of porous quantum-size structures.
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- Semiconductors, 1998, v. 32, n. 3, p. 322, doi. 10.1134/1.1187390
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- Article
Properties of p[sup +]–n structures with a buried layer of radiation-induced defects.
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- Semiconductors, 1998, v. 32, n. 3, p. 325, doi. 10.1134/1.1187394
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Lifetime of nonequilibrium carriers in semiconductors from the standpoint of a collective interaction in the process of radiative recombination.
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- Semiconductors, 1998, v. 32, n. 3, p. 332, doi. 10.1134/1.1187391
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- Article
Current-voltage characteristics of GaN and AlGaN p–i–n diodes.
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- Semiconductors, 1998, v. 32, n. 3, p. 335, doi. 10.1134/1.1187392
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- Article
Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current.
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- Semiconductors, 1998, v. 32, n. 3, p. 339, doi. 10.1134/1.1187393
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- Article