Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 11

Results: 22

Anisotropic thermocouples article.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1101

By:

Snarskiı, A. A.;
Pal’ti, A. M.;
Ashcheulov, A. A.

Publication type:

Article

Low-energy nonparabolicity and condenson states in In[sub 4]Se[sub 3] crystals.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1118, doi. 10.1134/1.1187277

By:

Bercha, D. M.;
Kharkhalis, L. Yu.;
Bercha, A. I.;
Shnajder, M.

Publication type:

Article

Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1123, doi. 10.1134/1.1187278

By:

Kudryashov, V. E.;
Zolin, K. G.;
Turkin, A. N.;
Yunovich, A. É.;
Kovalev, A. N.;
Manyakhin, F. I.

Publication type:

Article

Electron-structural metastability of cationic donor centers in GaAs.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1128, doi. 10.1134/1.1187279

By:

Onopko, D. E.;
Ryskin, A. I.;
Bagraev, N. T.

Publication type:

Article

Optical properties of thin n-Pb[sub 1-x]Sn[sub x]Se/BaF[sub 2] epitaxial layers in the plasmon–phonon interaction region.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1132, doi. 10.1134/1.1187280

By:

Kopylov, A. A.;
Moshnikov, V. A.;
Kholodilov, A. N.

Publication type:

Article

Position of antimony impurity atoms in a PbTe lattice, determined by emission Mössbauer spectroscopy.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1138, doi. 10.1134/1.1187281

By:

Masterov, V. F.;
Nasredinov, F. S.;
Nemov, S. A.;
Seregin, P. P.;
Troitskaya, N. N.;
Bondarevskiı, S. I.

Publication type:

Article

Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1140, doi. 10.1134/1.1187282

By:

Vlasenko, A. I.;
Vlasenko, Z. K.;
Lyubchenko, A. V.

Publication type:

Article

Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1144, doi. 10.1134/1.1187283

By:

Ivanova, G. N.;
Kasiyan, V. A.;
Nedeoglo, D. D.

Publication type:

Article

Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1148

By:

Sokolovskiı, B. S.;
Monastyrskiı, L. S.

Publication type:

Article

Photoconductivity of CuInSe[sub 2] films.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1151

By:

Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Relaxation properties of a metal–chalcogenide glassy semiconductor.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1155, doi. 10.1134/1.1187286

By:

Avanesyan, V. T.;
Bordovskiı, V. A.;
Castro, R. A.

Publication type:

Article

Electrical and photoelectric properties of an anisotypic Pb[sub 0.93]Sn[sub 0.07]Se/PbSe heterojunction.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1157, doi. 10.1134/1.1187287

By:

Gavrikova, T. A.;
Zykov, V. A.

Publication type:

Article

Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1161, doi. 10.1134/1.1187288

By:

Lebedev, A. A.;
Poletaev, N. K.;
doKarmo, M. Z.

Publication type:

Article

Passivation of GaAs in alcohol solutions of ammonium sulfide.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1164, doi. 10.1134/1.1187289

By:

Bessolov, V. N.;
Konenkova, E. V.;
Lebedev, M. V.;
Zahn, D. R. T.

Publication type:

Article

Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1170, doi. 10.1134/1.1187290

By:

Drichko, I. L.;
D’yakonov, A. M.;
Kagan, V. D.;
Kreshchuk, A. M.;
Polyanskaya, T. A.;
Savel’ev, I. G.;
Smirnov, I. Yu.;
Suslov, A. V.

Publication type:

Article

Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1178, doi. 10.1134/1.1187291

By:

Guk, A. V.;
Kaminskiı, V. É.;
Mokerov, V. G.;
Fedorov, Yu. V.;
Khabarov, Yu. V.

Publication type:

Article

Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1185, doi. 10.1134/1.1187292

By:

Polupanov, A. F.;
Galiev, V. I.;
Novak, M. G.

Publication type:

Article

Photoluminescence of porous gallium arsenide.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1192, doi. 10.1134/1.1187293

By:

Goryachev, D. N.;
Sreseli, O. M.

Publication type:

Article

Polarization memory in an oxidized porous SiC layer.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1196

By:

Danishevskiı, A. M.;
Rogachev, A. Yu.;
Shuman, V. B.;
Guk, E. G.

Publication type:

Article

Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1200, doi. 10.1134/1.1187294

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. N.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1204

By:

Gun’ko, N. A.;
Zegrya, G. G.;
Zotova, N. V.;
Sokolova, Z. N.;
Stus’, N. M.;
Khalfin, V. B.

Publication type:

Article

Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1212, doi. 10.1134/1.1187295

By:

Ivanov, P. A.;
Kon’kov, O. I.;
Panteleev, V. N.;
Samsonova, T. P.

Publication type:

Article