Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 11

Results: 22

Anisotropic thermocouples article.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1101
By:
- Snarskiı, A. A.;
- Pal’ti, A. M.;
- Ashcheulov, A. A.
Publication type:
Article
Low-energy nonparabolicity and condenson states in In[sub 4]Se[sub 3] crystals.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1118, doi. 10.1134/1.1187277
By:
- Bercha, D. M.;
- Kharkhalis, L. Yu.;
- Bercha, A. I.;
- Shnajder, M.
Publication type:
Article
Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1123, doi. 10.1134/1.1187278
By:
- Kudryashov, V. E.;
- Zolin, K. G.;
- Turkin, A. N.;
- Yunovich, A. É.;
- Kovalev, A. N.;
- Manyakhin, F. I.
Publication type:
Article
Electron-structural metastability of cationic donor centers in GaAs.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1128, doi. 10.1134/1.1187279
By:
- Onopko, D. E.;
- Ryskin, A. I.;
- Bagraev, N. T.
Publication type:
Article
Optical properties of thin n-Pb[sub 1-x]Sn[sub x]Se/BaF[sub 2] epitaxial layers in the plasmon–phonon interaction region.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1132, doi. 10.1134/1.1187280
By:
- Kopylov, A. A.;
- Moshnikov, V. A.;
- Kholodilov, A. N.
Publication type:
Article
Position of antimony impurity atoms in a PbTe lattice, determined by emission Mössbauer spectroscopy.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1138, doi. 10.1134/1.1187281
By:
- Masterov, V. F.;
- Nasredinov, F. S.;
- Nemov, S. A.;
- Seregin, P. P.;
- Troitskaya, N. N.;
- Bondarevskiı, S. I.
Publication type:
Article
Extraction of charge carriers in semiconductors with a monopolar component of the photoconductivity.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1140, doi. 10.1134/1.1187282
By:
- Vlasenko, A. I.;
- Vlasenko, Z. K.;
- Lyubchenko, A. V.
Publication type:
Article
Photoluminescence of n-type ZnSe crystals doped with donor and acceptor impurities from a LiCl salt melt.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1144, doi. 10.1134/1.1187283
By:
- Ivanova, G. N.;
- Kasiyan, V. A.;
- Nedeoglo, D. D.
Publication type:
Article
Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1148
By:
- Sokolovskiı, B. S.;
- Monastyrskiı, L. S.
Publication type:
Article
Photoconductivity of CuInSe[sub 2] films.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1151
By:
- Rud’, V. Yu.;
- Rud’, Yu. V.
Publication type:
Article
Relaxation properties of a metal–chalcogenide glassy semiconductor.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1155, doi. 10.1134/1.1187286
By:
- Avanesyan, V. T.;
- Bordovskiı, V. A.;
- Castro, R. A.
Publication type:
Article
Electrical and photoelectric properties of an anisotypic Pb[sub 0.93]Sn[sub 0.07]Se/PbSe heterojunction.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1157, doi. 10.1134/1.1187287
By:
- Gavrikova, T. A.;
- Zykov, V. A.
Publication type:
Article
Excitonic electroluminescence of 6H-SiC p–n structures obtained by sublimation epitaxy.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1161, doi. 10.1134/1.1187288
By:
- Lebedev, A. A.;
- Poletaev, N. K.;
- doKarmo, M. Z.
Publication type:
Article
Passivation of GaAs in alcohol solutions of ammonium sulfide.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1164, doi. 10.1134/1.1187289
By:
- Bessolov, V. N.;
- Konenkova, E. V.;
- Lebedev, M. V.;
- Zahn, D. R. T.
Publication type:
Article
Heating of a two-dimensional electron gas by the electric field of a surface acoustic wave.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1170, doi. 10.1134/1.1187290
By:
- Drichko, I. L.;
- D’yakonov, A. M.;
- Kagan, V. D.;
- Kreshchuk, A. M.;
- Polyanskaya, T. A.;
- Savel’ev, I. G.;
- Smirnov, I. Yu.;
- Suslov, A. V.
Publication type:
Article
Optical spectroscopy of two-dimensional electronic states in modulation-doped N-AlGaAs/GaAs heterostructures.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1178, doi. 10.1134/1.1187291
By:
- Guk, A. V.;
- Kaminskiı, V. É.;
- Mokerov, V. G.;
- Fedorov, Yu. V.;
- Khabarov, Yu. V.
Publication type:
Article
Effect of the spin-orbit interaction on the optical spectra of an acceptor in a semiconductor quantum dot.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1185, doi. 10.1134/1.1187292
By:
- Polupanov, A. F.;
- Galiev, V. I.;
- Novak, M. G.
Publication type:
Article
Photoluminescence of porous gallium arsenide.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1192, doi. 10.1134/1.1187293
By:
- Goryachev, D. N.;
- Sreseli, O. M.
Publication type:
Article
Polarization memory in an oxidized porous SiC layer.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1196
By:
- Danishevskiı, A. M.;
- Rogachev, A. Yu.;
- Shuman, V. B.;
- Guk, E. G.
Publication type:
Article
Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1200, doi. 10.1134/1.1187294
By:
- Danilova, T. N.;
- Danilova, A. P.;
- Ershov, O. G.;
- Imenkov, A. N.;
- Stepanov, M. V.;
- Sherstnev, V. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Influence of valence band absorption on the threshold characteristics of long-wavelength InAs lasers.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1204
By:
- Gun’ko, N. A.;
- Zegrya, G. G.;
- Zotova, N. V.;
- Sokolova, Z. N.;
- Stus’, N. M.;
- Khalfin, V. B.
Publication type:
Article
Influence of plasma treatment of the surface of silicon carbide on the characteristics of buried-gate junction field-effect transistors.
Published in:
Semiconductors, 1997, v. 31, n. 11, p. 1212, doi. 10.1134/1.1187295
By:
- Ivanov, P. A.;
- Kon’kov, O. I.;
- Panteleev, V. N.;
- Samsonova, T. P.
Publication type:
Article