Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 6

Results: 28

Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 545

By:

Kozlovskiı, V. I.;
Artemov, A. S.;
Korostelin, Yu. V.;
Krysa, A. B.;
Shapkin, P. V.;
Trubenko, P. A.;
Dianov, E. M.;
Shcherbakov, E. A.

Publication type:

Article

Mesoscopic effects in the hopping conductivity region of macroscopic quasi-two-dimensional systems.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 551, doi. 10.1134/1.1187216

By:

Aronzon, B. A.;
Vedeneev, A. S.;
Ryl’kov, V. V.

Publication type:

Article

Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 556, doi. 10.1134/1.1187217

By:

Andreev, I. A.;
Kunitsyna, E. V.;
Lantratov, V. M.;
L’vova, T. V.;
Mikhaılova, M. P.;
Yakovlev, Yu. P.

Publication type:

Article

Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 560, doi. 10.1134/1.1187218

By:

Bazhenov, N. L.;
Zegrya, G. G.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Smirnov,, V. A.;
Solov’eva, O. Yu.;
Yakovlev, Yu. P.

Publication type:

Article

Influence of charge carriers on tuning in InAsSb lasers.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 563, doi. 10.1134/1.1187215

By:

Danilova, T. N.;
Evseenko, O. I.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov,, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Depolarization and photoionization effects in quantum wells.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 567, doi. 10.1134/1.1187219

By:

Petrov, A. G.;
Shik, A. Ya.

Publication type:

Article

Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 571, doi. 10.1134/1.1187318

By:

Maksimov, M. V.;
Shernyakov, Yu. M.;
Zaıtsev, S. V.;
Gordeev, N. Yu.;
Egorov,, A. Yu.;
Zhukov, A. E.;
Kop’ev, P. S.;
Kosogov, A. O.;
Sakharov, A. V.;
Ledentsov,, N. N.;
Ustinov, V. M.;
Tsatsul’nikov, A. F.;
Alferov, Zh. I.;
Böhrer, J.;
Bimberg, D.

Publication type:

Article

Formation of carrier generation centers in pure Si upon interaction with fast ions.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 575, doi. 10.1134/1.1187220

By:

Ivanov, A. M.;
Strokan, N. B.

Publication type:

Article

Influence of hydrostatic pressure on the electron mobility and the correlation properties of a mixed-valence system of iron impurity ions in HgSe:Fe crystals.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 580, doi. 10.1134/1.1187221

By:

Kuleev, I. G.;
Shtrapenin, G. L.

Publication type:

Article

Drift-induced production of concentration gratings in an electron-hole plasma in a high-frequency electric field.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 585, doi. 10.1134/1.1187222

By:

Borblik, V. L.

Publication type:

Article

Thermal-gradient concentration in a bipolar semiconductor with phonon drag of charge carriers.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 590, doi. 10.1134/1.1187223

By:

Konin, A. M.

Publication type:

Article

Light-emitting diodes based on a metal-insulator-semiconductor structure.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 593, doi. 10.1134/1.1187319

By:

Katok, V. B.;
Panfilov, M. I.;
Chaıka, G. E.

Publication type:

Article

Recombination model of the diffusion of zinc in GaAs.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 595

By:

Grigor’ev, N. N.;
Kudykina, T. A.

Publication type:

Article

Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 600, doi. 10.1134/1.1187225

By:

Myasnikov, A. M.;
Obodnikov, V. I.;
Seryapin, V. G.;
Tishkovskiı, E. G.;
Fomin, B. I.;
Cherepov, E. I.

Publication type:

Article

Influence of impurity germanium on the properties of sulfur centers in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 605, doi. 10.1134/1.1187226

By:

Yunusov, M. S.;
Karimov, M.;
Oksengendler, B. L.;
Yusupov, A.

Publication type:

Article

Possibility of enhancing a photorefractive hologram using negative differential conductivity.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 608, doi. 10.1134/1.1187317

By:

Miklyaev, Yu. V.

Publication type:

Article

Dielectric constant and ac conductivity of semi-insulating Cd[sub 1-x]Mn[sub x]Te semiconductors.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 610, doi. 10.1134/1.1187227

By:

Zukowski, P. W.;
Rodzik, A.;
Shostak, Yu. A.

Publication type:

Article

Anomalous distribution of iron atoms following the simultaneous implantation of Co[sup +] and Fe[sup +] ions in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 615, doi. 10.1134/1.1187237

By:

Gumarov, G. G.;
Petukhov, V. Yu.;
Zhikharev, V. A.;
Shustov, V. A.;
Khaıbullin, I. B.

Publication type:

Article

Features of radiation-induced defect formation in p-type Si<B,Pt>.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 618, doi. 10.1134/1.1187228

By:

Yunusov, M. S.;
Karimov, M.;
Alikulov, M.;
Akhmadaliev, A.;
Oksengendler, B. L.;
Sabirov, S. S.

Publication type:

Article

Schottky barrier breakdown in Si stimulated by exciton drift in a nonuniform electric field at 4.2 K.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 620, doi. 10.1134/1.1187229

By:

Musaev, A. M.

Publication type:

Article

Influence of ytterbium on radiation-induced defect formation in silicon.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 624, doi. 10.1134/1.1187230

By:

Talipov, F. M.

Publication type:

Article

Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231

By:

Kachurin, G. A.;
Tyschenko, I. E.;
Zhuravlev, K. S.;
Pazdnikov, N. A.;
Volodin, V. A.;
Gutakovskiı, A. K.;
Leıer, A. F.;
Skorupa, W.;
Yankov, R. A.

Publication type:

Article

Quantum efficiency of Schottky photodiodes near the long-wavelength edge.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 631, doi. 10.1134/1.1187232

By:

Ivanov, V. G.;
Panasenkov, V. I.;
Ivanov, G. V.

Publication type:

Article

Use of a low-temperature emitter in investigating the spectral characteristics of infrared photodetectors.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 642

By:

Vasil’ev, V. V.;
Mashukov, Yu. P.;
Ovsyuk, V. N.

Publication type:

Article

Laser-stimulated displacement of the p-n junction boundary in direct-gap GaAsP structures.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 645, doi. 10.1134/1.1187235

By:

Sukach, G. A.

Publication type:

Article

Capacitive Methods of Semiconductor Purity Control.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 649, doi. 10.1134/1.1187236

By:

Berman, L. S.

Publication type:

Article

The photoconductivity of Cd[sub x]Hg[sub 1-x]Te (x=0.2-0.3) with an aluminum thin-film coating.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 635, doi. 10.1134/1.1187233

By:

Salaev, É. Yu.;
Guseınov, É. K.;
Ismaılov, N. D.;
Tezer, Atesh

Publication type:

Article

Temperature dependence of the photoluminescence of porous silicon.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 639, doi. 10.1134/1.1187234

By:

Kashkarov, P. K.;
Konstantinova, E. A.;
Petrova, S. A.;
Timoshenko, V. Yu.;
Yunovich, A. É.

Publication type:

Article