Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 2

Results: 26

Electrothermal instabilities induced by a metastable electronic state in PbTe(Ga).

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 100, doi. 10.1134/1.1187089

By:

Akimov, B. A.;
Brandt, N. B.;
Albul, A. V.;
Ryabova, L. I.

Publication type:

Article

Resonant interaction of electrons with a high frequency electric field in two-barrier structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 103, doi. 10.1134/1.1187090

By:

Belyaeva, I. V.;
Golant, E. I.;
Pashkovskiı, A. B

Publication type:

Article

Transport of hydrogen in films of graphite, amorphous silicon, and nickel oxide.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 110, doi. 10.1134/1.1187091

By:

Gabis, I. E.

Publication type:

Article

Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092

By:

Evstropov, V. V.;
Zhilyaev, Yu. V.;
Dzhumaeva, M.;
Nazarov, N.

Publication type:

Article

Photosensitivity of porous silicon-silicon heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 121, doi. 10.1134/1.1187137

By:

Astrova, E. V.;
Lebedev, A. A.;
Remenyuk, A. D.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 124, doi. 10.1134/1.1187093

By:

Maksimov, M. V.;
Gordeev, N. Yu.;
Zaıtsev, S. V.;
Kop’ev, P. S.;
Kochnev, I. V.;
Ledentsov, N. N.;
Lunev, A. V.;
Ruvimov, S. S.;
Sakharov, A. V.;
Tsatsul’nikov, A. F.;
Shernyakov, Yu. M.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 127, doi. 10.1134/1.1187088

By:

Krestnikov, I. L.;
Maksimov, M. V.;
Ivanov, S. V.;
Ledentsov, N. N.;
Sorokin, S. V.;
Tsatsul’nikov, A. F.;
Lyublinskaya, O. G.;
Volovik, B. V.;
Kop’ev, P. S.;
Sotomayor Torres, S. M.

Publication type:

Article

Electron and hole spectra and selection rules for optical transitions in Ge[sub 1-x]Si[sub x]/Ge heterostructures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 132, doi. 10.1134/1.1187094

By:

Aleshkin, V. Ya.;
Bekin, N. A.

Publication type:

Article

Mechanical properties of pure and doped InP single crystals determined under local loading.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 139, doi. 10.1134/1.1187095

By:

Boyarskaya, Yu. S.;
Grabko, D. Z.;
Medinskaya, M. I.;
Palistrant, N. A.

Publication type:

Article

Unusual absorption “band” in the infrared spectrum of silicon annealed at high temperature and then rapidly cooled.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 143, doi. 10.1134/1.1187096

By:

Zhdanovich, N. S.

Publication type:

Article

Numerical modeling of microplasma instability.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 146, doi. 10.1134/1.1187097

By:

Datsko, B. I.

Publication type:

Article

Oscillations of a ballistic hole current through uniaxially compressed semiconductor layers.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 150, doi. 10.1134/1.1187098

By:

Vagidov, N. Z.;
Gribnikov, Z. S.;
Korshak, A. N.

Publication type:

Article

Trapping of hot electrons at repulsive centers under transverse runaway conditions.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 161, doi. 10.1134/1.1187099

By:

Kachlishvili, Z. S.;
Kachlishvili, Kh. Z.;
Chumburidze, F. G.

Publication type:

Article

Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 164, doi. 10.1134/1.1187100

By:

Kosyachenko, L. A.;
Sklyarchuk, V. M.;
Sklyarchuk, E. F.

Publication type:

Article

Breakdown electroluminescence spectra of silicon carbide p–n junctions.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 169, doi. 10.1134/1.1187101

By:

Belous, M. V.;
Genkin, A. M.;
Genkina, V. K.;
Guseva, O. A.

Publication type:

Article

The dominant mechanisms of charge-carrier scattering in lead telluride.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 173, doi. 10.1134/1.1187322

By:

Zayachuk, D. M.

Publication type:

Article

Formation of order in a system of localized charges in disordered layers of solid solutions of cadmium telluride and cadmium sulfide.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 177, doi. 10.1134/1.1187102

By:

Belyaev, A. P.;
Rubets, V. P.;
Kalinkin, I. P.

Publication type:

Article

Two-electron tin centers with negative correlation energy in lead chalcogenides. Determination of the Hubbard energy.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 181, doi. 10.1134/1.1187103

By:

Masterov, V. F.;
Nasredinov, F. S.;
Nemov, S. A.;
Seregin, P. P.

Publication type:

Article

Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 186, doi. 10.1134/1.1187104

By:

Dianov, E. M.;
Trubenko, P. A.;
Filimonov, E. É.;
Shcherbakov, E. A.

Publication type:

Article

Formation of radiation defects in high-resistivity silicon as a result of cyclic irradiation and annealing.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 189, doi. 10.1134/1.1187105

By:

Verbitskaya, E. M.;
Eremin, V. K.;
Ivanov, A. M.;
Li, Z.;
Schmidt, B.

Publication type:

Article

Photosensitivity of InP/CdS heterostructures in linearly polarized light.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 194, doi. 10.1134/1.1187106

By:

Botnaryuk, V. M.;
Gorchak, L. V.;
Pleshka, V. N.;
Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Photoelectric properties of porous and single-crystal silicon heterocontacts.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 197

By:

Rud’, V. Yu.;
Rud’, Yu. V.

Publication type:

Article

Photoluminescence of anodized layers of CdSiAs[sub 2].

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 200, doi. 10.1134/1.1187108

By:

Lebedev, A. A.;
Rud’, Yu. V.;
Rud’, V. Yu.

Publication type:

Article

Photoluminescence of anodized silicon carbide.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 202, doi. 10.1134/1.1187109

By:

Agekyan, V. F.;
Stepanov, Yu. A.;
Lebedev, A. A.;
Rud’, Yu. V.

Publication type:

Article

Semiconductors-97: Third Russian Conference on Semiconductor Physics.

Published in:: Semiconductors, 1997, v. 31, n. 2, p. 204, doi. 10.1134/1.1187110
Publication type:: Article

Photovoltaic effect in a p-type CuInSe[sub 2]/green leaf heterojunction.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 97

By:

Rud’, V. Yu.;
Rud’, Yu. V.;
Shpunt, V. Kh.

Publication type:

Article