Modeling the hydrogen distribution accompanying electron injection in SiO[sub 2] films in strong electric fields.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 207, doi. 10.1134/1.1187113
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 1997 AND VI 31 AND IP 3
Results: 26
1
2
Effect of electron irradiation on the electrical properties of n-type Pb[sub 1-x]Sn[sub x]Te (x=2) alloys.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 214, doi. 10.1134/1.1187114
- By:
- Publication type:
- Article
3
Transport phenomena in n-Mn[sub x]Hg[sub 1-x]Te/Cd[sub 0.96]Zn[sub 0.04]Te epitaxial films.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 218, doi. 10.1134/1.1187115
- By:
- Publication type:
- Article
4
Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 222, doi. 10.1134/1.1187116
- By:
- Publication type:
- Article
5
Defects in intrinsic and pseudodoped amorphous hydrated silicon.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 228, doi. 10.1134/1.1187117
- By:
- Publication type:
- Article
6
Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 232, doi. 10.1134/1.1187112
- By:
- Publication type:
- Article
7
Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 237, doi. 10.1134/1.1187274
- By:
- Publication type:
- Article
8
Quasi-static capacitance of a MOS-FET upon saturation of the carrier drift velocity.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 241, doi. 10.1134/1.1187118
- By:
- Publication type:
- Article
9
Binding energy of shallow donors in asymmetrical systems of quantum wells.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 246, doi. 10.1134/1.1187119
- By:
- Publication type:
- Article
10
Nonlinear conductivity and current–voltage characteristics of two-dimensional semiconductor superlattices.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 252, doi. 10.1134/1.1187120
- By:
- Publication type:
- Article
11
Fabrication of blocked impurity-band structures on gallium-doped silicon by plasma hydrogenation.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 255
- By:
- Publication type:
- Article
12
Shubnikov–de Haas oscillations in HgSe<Fe> and HgSe<Co> under hydrostatic pressure.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 261
- By:
- Publication type:
- Article
13
Thermoelectric figure of merit of monopolar semiconductors with finite dimensions.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 265, doi. 10.1134/1.1187123
- By:
- Publication type:
- Article
14
Galvanomagnetic phenomena in p-Hg[sub 1-x]Mn[sub x]Te solid solutions.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 268, doi. 10.1134/1.1187124
- By:
- Publication type:
- Article
15
Lattice vibrations in CuInSe[sub 2] crystals.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 271, doi. 10.1134/1.1187125
- By:
- Publication type:
- Article
16
Anomalies in the low-temperature thermoelectric power of p-Bi[sub 2]Te[sub 3] and Te associated with topological electronic transitions under pressure.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 276, doi. 10.1134/1.1187126
- By:
- Publication type:
- Article
17
Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 279, doi. 10.1134/1.1187127
- By:
- Publication type:
- Article
18
Influence of elastic stresses on the character of epitaxial crystallization of (Hg, Mn)Te.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 283, doi. 10.1134/1.1187128
- By:
- Publication type:
- Article
19
Effect of illumination time on the annealing of optically created metastable defects in p-type a-Si:H.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 287, doi. 10.1134/1.1187129
- By:
- Publication type:
- Article
20
Recombination mechanisms in doped n-type Hg[sub 1-x]Cd[sub x]Te crystals and properties of diffusion p[sup +]-n junctions based on them.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 290, doi. 10.1134/1.1187130
- By:
- Publication type:
- Article
21
Influence of the X-valley on the tunneling and lifetime of electrons in GaAs/AlAs heterostructures.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 294, doi. 10.1134/1.1187131
- By:
- Publication type:
- Article
22
Auger recombination in strained quantum wells.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 297, doi. 10.1134/1.1187132
- By:
- Publication type:
- Article
23
Luminescence of porous silicon in the infrared spectral region at room temperature.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 304, doi. 10.1134/1.1187133
- By:
- Publication type:
- Article
24
Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 308, doi. 10.1134/1.1187134
- By:
- Publication type:
- Article
25
Luminescence of copper-aluminum diselenide.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 315, doi. 10.1134/1.1187135
- By:
- Publication type:
- Article
26
The electrical activity of isoelectronic germanium impurities in lead chalcogenides.
- Published in:
- Semiconductors, 1997, v. 31, n. 3, p. 319, doi. 10.1134/1.1187136
- By:
- Publication type:
- Article