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High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm.
Published in:
Technical Physics Letters, 2008, v. 34, n. 12, p. 1008, doi. 10.1134/S1063785008120055
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Maksimov, M. V.;
- Zhukov, A. E.;
- Shernyakov, Yu. M.;
- Ustinov, V. M.;
- Kryzhanovskaya, N. V.;
- Payusov, A. S.;
- Krestnikov, I. L.;
- Lifshits, D. A.;
- Mikhrin, S. S.;
- Kovsh, A. R.
Publication type:
Article
InGaAs Nanodomains Formed insitu on the Surface of (Al,Ga)As.
Published in:
Technical Physics Letters, 2001, v. 27, n. 3, p. 233, doi. 10.1134/1.1359837
By:
- Krestnikov, I. L.;
- Cherkashin, N. A.;
- Sizov, D. S.;
- Bedarev, D. A.;
- Kochnev, I. V.;
- Lantratov, V. M.;
- Ledentsov, N. N.
Publication type:
Article
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure.
Published in:
Technical Physics Letters, 1997, v. 23, n. 8, p. 597, doi. 10.1134/1.1261764
By:
- Maksimov, M. V.;
- Sakharov, A. V.;
- Lundin, V. V.;
- Usikov, A. S.;
- Pushnyı, B. V.;
- Krestnikov, I. L.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Rozum, V. P.
Publication type:
Article
Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement.
Published in:
Technical Physics Letters, 1997, v. 23, n. 4, p. 305, doi. 10.1134/1.1261822
By:
- Sakharov, A. V.;
- Ivanov, S. V.;
- Sorokin, S. V.;
- Krestnikov, I. L.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Kop’ev, P. S.
Publication type:
Article
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W.
Published in:
Technical Physics Letters, 1997, v. 23, n. 2, p. 149, doi. 10.1134/1.1261567
By:
- Shernyakov, Yu. M.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Zaıtsev, S. V.;
- Kovsh, A. R.;
- Krestnikov, I. L.;
- Lunev, A. V.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Ustinov, V. M.;
- Chen, Chao;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement.
Published in:
Technical Physics Letters, 1997, v. 23, n. 1, p. 23, doi. 10.1134/1.1261607
By:
- Krestnikov, I. L.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Sakharov, A. V.;
- Ivanov, S. V.;
- Sorokin, S. V.;
- Tenishev, L. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.
Publication type:
Article
Effect of p-Doping of the Active Region on the Temperature Stability of InAs/GaAs QD Lasers.
Published in:
Semiconductors, 2005, v. 39, n. 4, p. 477, doi. 10.1134/1.1900266
By:
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Karachinski&icaron;, L. Ya.;
- Maksimov, M. V.;
- Shernyakov, Yu. M.;
- Kovsh, A. R.;
- Krestnikov, I. L.;
- Kozhukhov, A. V.;
- Mikhrin, S. S.;
- Ledentsov, N. N.
Publication type:
Article
1.3μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them.
Published in:
Semiconductors, 2001, v. 35, n. 7, p. 854, doi. 10.1134/1.1385724
By:
- Sakharov, A. V.;
- Krestnikov, I. L.;
- Maleev, N. A.;
- Kovsh, A. R.;
- Zhukov, A. E.;
- Tsatsul’nikov, A. F.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Bimberg, D.;
- Lott, J. A.;
- Alferov, Zh. I.
Publication type:
Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Krestnikov, I. L.;
- Kayander, I. N.;
- Odnoblyudov, V. A.;
- Suvorova, A. A.;
- Tsatsul’nikov, A. F.;
- Shernyakov, Yu. M.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 4, p. 481, doi. 10.1134/1.1188011
By:
- Krestnikov, I. L.;
- Sakharov, A. V.;
- Lundin, W. V.;
- Musikhin, Yu. G.;
- Kartashova, A. P.;
- Usikov, A. S.;
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Alferov, Zh. I.;
- Soshnikov, I. P.;
- Hahn, E.;
- Neubauer, B.;
- Rosenauer, A.;
- Litvinov, D.;
- Gerthsen, D.;
- Plaut, A. C.;
- Hoffmann, A. A.;
- Bimberg, D.
Publication type:
Article
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm.
Published in:
Semiconductors, 1999, v. 33, n. 5, p. 586, doi. 10.1134/1.1187733
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Egorov, A. Yu.;
- Ustinov, V. M.;
- Krestnikov, I. L.;
- Lunev, A. V.;
- Sakharov, A. V.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alfërov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells.
Published in:
Semiconductors, 1997, v. 31, n. 8, p. 800, doi. 10.1134/1.1187254
By:
- Maksimov, M. V.;
- Krestnikov, I. L.;
- Ivanov, S. V.;
- Ledentsov, N. N.;
- Sorokin, S. V.
Publication type:
Article
Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures.
Published in:
Semiconductors, 1997, v. 31, n. 2, p. 127, doi. 10.1134/1.1187088
By:
- Krestnikov, I. L.;
- Maksimov, M. V.;
- Ivanov, S. V.;
- Ledentsov, N. N.;
- Sorokin, S. V.;
- Tsatsul’nikov, A. F.;
- Lyublinskaya, O. G.;
- Volovik, B. V.;
- Kop’ev, P. S.;
- Sotomayor Torres, S. M.
Publication type:
Article
Photoluminescence of InSb quantum dots in GaAs and GaSb matrices.
Published in:
Semiconductors, 1997, v. 31, n. 1, p. 55, doi. 10.1134/1.1187086
By:
- Tsatsul’nikov, A. F.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Mel’tser, B. Ya.;
- Neklyudov, P. V.;
- Shaposhnikov, S. V.;
- Volovik, B. V.;
- Krestnikov, I. L.;
- Sakharov, A. V.;
- Bert,, N. A.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Small-signal cross-gain modulation and crosstalk characteristics of quantum dot semiconductor optical amplifiers at 1.3 μm.
Published in:
Physica Status Solidi (B), 2009, v. 246, n. 4, p. 864, doi. 10.1002/pssb.200880598
By:
- Kim, J.;
- Laemmlin, M.;
- Meuer, C.;
- Liebich, S.;
- Eisenstein, G.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Krestnikov, I. L.;
- Bimberg, D.
Publication type:
Article
Burst-mode analysis of XGPON Raman reach extender employing quantum-dot lasers.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1157, doi. 10.1049/el.2016.0407
By:
- Dalla Santa, M.;
- Antony, C.;
- Talli, G.;
- Krestnikov, I.;
- Townsend, P. D.
Publication type:
Article
Burst‐mode analysis of XGPON Raman reach extender employing quantum‐dot lasers.
Published in:
Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1157, doi. 10.1049/el.2016.0407
By:
- Dalla Santa, M.;
- Antony, C.;
- Talli, G.;
- Krestnikov, I.;
- Townsend, P.D.
Publication type:
Article
Broadly tunable quantum-dot based ultra-short pulse laser system with different diffraction grating orders.
Published in:
Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 5, p. 1, doi. 10.1049/el.2012.3761
By:
- Alhazime, A.;
- Ding, Y.;
- Nikitichev, D. I.;
- Fedorova, K. A.;
- Krestnikov, I. L.;
- Krakowski, M.;
- Rafailov, E. U.
Publication type:
Article
Directional Radiation from GaAs quantum dots in AlGaAs nanowires.
Published in:
Technical Physics Letters, 2021, v. 47, n. 5, p. 405, doi. 10.1134/S106378502104026X
By:
- Reznik, R. R.;
- Morozov, K. M.;
- Krestnikov, I. L.;
- Kotlyar, K. P.;
- Soshnikov, I. P.;
- Leandro, L.;
- Akopian, N.;
- Cirlin, G. E.
Publication type:
Article
High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers.
Published in:
Applied Physics B: Lasers & Optics, 2011, v. 103, n. 3, p. 609, doi. 10.1007/s00340-010-4290-5
By:
- Nikitichev, D.;
- Ding, Y.;
- Ruiz, M.;
- Calligaro, M.;
- Michel, N.;
- Krakowski, M.;
- Krestnikov, I.;
- Livshits, D.;
- Cataluna, M.;
- Rafailov, E.
Publication type:
Article
Orange light generation from a PPKTP waveguide end pumped by a cw quantum-dot tunable laser diode.
Published in:
Applied Physics B: Lasers & Optics, 2011, v. 103, n. 1, p. 41, doi. 10.1007/s00340-010-4317-y
By:
- Fedorova, K.;
- Cataluna, M.;
- Battle, P.;
- Kaleva, C.;
- Krestnikov, I.;
- Livshits, D.;
- Rafailov, E.
Publication type:
Article
Modelocked quantum dot vertical external cavity surface emitting laser.
Published in:
Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 733, doi. 10.1007/s00340-008-3267-0
By:
- Hoffmann, M.;
- Barbarin, Y.;
- Maas, D.;
- Golling, M.;
- Krestnikov, I. L.;
- Mikhrin, S. S.;
- Kovsh, A. R.;
- Südmeyer, T.;
- Keller, U.
Publication type:
Article
A narrow-line-width external cavity quantum dot laser for high-resolution spectroscopy in the near-infrared and yellow spectral ranges.
Published in:
Applied Physics B: Lasers & Optics, 2008, v. 92, n. 4, p. 501, doi. 10.1007/s00340-008-3113-4
By:
- Nevsky, A. Yu.;
- Bressel, U.;
- Ernsting, I.;
- Eisele, Ch.;
- Okhapkin, M.;
- Schiller, S.;
- Gubenko, A.;
- Livshits, D.;
- Mikhrin, S.;
- Krestnikov, I.;
- Kovsh, A.
Publication type:
Article

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