Works matching DE "HAFNIUM oxide"

Results: 457

The search continues for high-k gate dielectrics.

Published in:

Solid State Technology, 2001, v. 44, n. 2, p. 46

By:

Demmin, Jeffrey C.

Publication type:

Article

Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6303, doi. 10.1007/s11664-024-11347-8

By:

Pandey, Rajan Kumar

Publication type:

Article

Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3933, doi. 10.1007/s11664-024-11130-9

By:

Kumawat, Pradeep Kumar;
Birla, Shilpi;
Singh, Neha

Publication type:

Article

The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3756, doi. 10.1007/s11664-024-11066-0

By:

Ye, Fengyu;
Zhu, Ying;
Yuan, Jun-Hui;
Wang, Jiafu

Publication type:

Article

Effect of zero bias Gamma ray irradiation on HfO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12796, doi. 10.1007/s10854-016-5412-6

By:

Maurya, Savita

Publication type:

Article

Study of electrical properties of hafnium oxide thin film based metal-insulator-metal capacitors: pre and post metallic annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12527, doi. 10.1007/s10854-016-5783-8

By:

Mangla, O.;
Gupta, V.

Publication type:

Article

Double hysteresis loop in BaTiHfO ferroelectric ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 5833, doi. 10.1007/s10854-015-3143-8

By:

Das, S.;
Roul, B.

Publication type:

Article

Enhanced leakage current properties of HfO/GaN gate dielectric stack by introducing an ultrathin buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 152, doi. 10.1007/s10854-013-1565-8

By:

Tang, Zhen;
Li, Rong;
Yin, Jiang

Publication type:

Article

Growth and properties of HfZnO thin films on flexible PET substrate using pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 362, doi. 10.1007/s10854-012-0757-y

By:

Zhou, Xiongtu;
Zhang, Yong-ai;
Shi, Wangzhou;
Guo, Tailiang

Publication type:

Article

Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 882, doi. 10.1007/s10854-010-0230-8

By:

Srivastava, A.;
Nahar, R. K.;
Sarkar, C. K.

Publication type:

Article

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y

By:

McNeill, D. W.;
Bhattacharya, S.;
Wadsworth, H.;
Ruddell, F. H.;
Mitchell, S. J. N.;
Armstrong, B. M.;
Gamble, H. S.

Publication type:

Article

Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 6, p. 615, doi. 10.1007/s10854-006-9111-6

By:

Nahar, R.;
Singh, Vikram;
Sharma, Aparna

Publication type:

Article

Structure of ceramics produced through high-temperature nitridation of hafnium foil.

Published in:

Inorganic Materials, 2017, v. 53, n. 4, p. 424, doi. 10.1134/S0020168517040100

By:

Kuznetsov, K.;
Kovalev, I.;
Ogarkov, A.;
Shevtsov, S.;
Kannykin, S.;
Chernyavskii, A.;
Solntsev, K.

Publication type:

Article

Composition and structure of hafnia films on silicon.

Published in:

Inorganic Materials, 2008, v. 44, n. 9, p. 965, doi. 10.1134/S0020168508090124

By:

Smirnova, T.;
Kaichev, V.;
Yakovkina, L.;
Kosyakov, V.;
Beloshapkin, S.;
Kuznetsov, F.;
Lebedev, M.;
Gritsenko, V.

Publication type:

Article

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders.

Published in:

Inorganic Materials, 2006, v. 42, n. 10, p. 1076, doi. 10.1134/S0020168506100050

By:

Glushkova, V. B.;
Panova, T. I.

Publication type:

Article

Exploratory studies on wet oxidation grown ternary hafnium tantalum oxide for metal‐oxide semiconductor application.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 4, p. 4699, doi. 10.1002/er.7466

By:

Lim, Way Foong;
Quah, Hock Jin

Publication type:

Article

Evaluation of structural, electronic, thermoelectric, and optical results of C‐doped HfO2 by first‐principle's investigation.

Published in:

International Journal of Energy Research, 2020, v. 44, n. 1, p. 144, doi. 10.1002/er.4878

By:

Cao, Zhenheng;
Fan, Ting;
Hou, Xueyuan;
Niu, Jiajia;
Sharma, Ramesh;
Dar, Sajad Ahmad

Publication type:

Article

An Efficient Training Methodology of Hardware Neural Network Based on Wafer‐Scale MoS2 Synaptic Array.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200909

By:

Cao, Yuanyuan;
Meng, Jialin;
Li, Qingxuan;
Wang, Tianyu;
Zhu, Hao;
Sun, Qingqing;
Zhang, David Wei;
Chen, Lin

Publication type:

Article

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200601

By:

Fields, Shelby S.;
Cai, Truong;
Jaszewski, Samantha T.;
Salanova, Alejandro;
Mimura, Takanori;
Heinrich, Helge H.;
Henry, Michael David;
Kelley, Kyle P.;
Sheldon, Brian W.;
Ihlefeld, Jon F.

Publication type:

Article

The Effect of Deposition Conditions on Heterointerface‐Driven Band Alignment and Resistive Switching Properties.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200220

By:

Yong, Zhihua;
Ram, Mamidala Saketh;
Persson, Karl‐Magnus;
Subramanian, Gomathy Sandhya;
Wernersson, Lars‐Erik;
Pan, Jisheng

Publication type:

Article

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022).

Published in:

2022

By:

Cheema, Suraj S.;
Shanker, Nirmaan;
Hsu, Cheng‐Hsiang;
Datar, Adhiraj;
Bae, Jongho;
Kwon, Daewoong;
Salahuddin, Sayeef

Publication type:

Cover Art

Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100420

By:

Song, Tingfeng;
Estandía, Saúl;
Tan, Huan;
Dix, Nico;
Gàzquez, Jaume;
Fina, Ignasi;
Sánchez, Florencio

Publication type:

Article

Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100414

By:

Feng, Ze;
Peng, Yue;
Shen, Yang;
Li, Zhiyun;
Wang, Hu;
Chen, Xiao;
Wang, Yitong;
Jing, Meiyi;
Lu, Feng;
Wang, Weihua;
Cheng, Yahui;
Cui, Yi;
Dingsun, An;
Han, Genquan;
Liu, Hui;
Dong, Hong

Publication type:

Article

A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000057

By:

Chen, Li;
Wang, Lin;
Peng, Yue;
Feng, Xuewei;
Sarkar, Soumya;
Li, Sifan;
Li, Bochang;
Liu, Liang;
Han, Kaizhen;
Gong, Xiao;
Chen, Jingsheng;
Liu, Yan;
Han, Genquan;
Ang, Kah‐Wee

Publication type:

Article

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.202000098
Publication type:: Article

Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201901015

By:

Mart, Clemens;
Kämpfe, Thomas;
Hoffmann, Raik;
Eßlinger, Sophia;
Kirbach, Sven;
Kühnel, Kati;
Czernohorsky, Malte;
Eng, Lukas M.;
Weinreich, Wenke

Publication type:

Article

Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900588

By:

Liu, Yu;
Chen, Wenjie;
Zhao, Linyuan;
Guo, Junxiong;
Yang, Chen;
Wang, Xiawa;
Huang, Wen;
Ren, Tian‐ling;
Xu, Jun

Publication type:

Article

Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201970054

By:

Petzold, Stefan;
Zintler, Alexander;
Eilhardt, Robert;
Piros, Eszter;
Kaiser, Nico;
Sharath, Sankaramangalam Ulhas;
Vogel, Tobias;
Major, Márton;
McKenna, Keith Patrick;
Molina‐Luna, Leopoldo;
Alff, Lambert

Publication type:

Article

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900484

By:

Petzold, Stefan;
Zintler, Alexander;
Eilhardt, Robert;
Piros, Eszter;
Kaiser, Nico;
Sharath, Sankaramangalam Ulhas;
Vogel, Tobias;
Major, Márton;
McKenna, Keith Patrick;
Molina‐Luna, Leopoldo;
Alff, Lambert

Publication type:

Article

A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800543

By:

Woo, Kyung Seok;
Wang, Yongmin;
Kim, Jihun;
Kim, Yumin;
Kwon, Young Jae;
Yoon, Jung Ho;
Kim, Woohyun;
Hwang, Cheol Seong

Publication type:

Article

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700547

By:

Fengler, Franz P. G.;
Nigon, Robin;
Muralt, Paul;
Grimley, Everett D.;
Xiahan Sang;
Sessi, Violetta;
Hentschel, Rico;
LeBeau, James M.;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Si Doped Hafnium Oxide-A 'Fragile' Ferroelectric System.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 10, p. n/a, doi. 10.1002/aelm.201700131

By:

Richter, Claudia;
Schenk, Tony;
Park, Min Hyuk;
Tscharntke, Franziska A.;
Grimley, Everett D.;
LeBeau, James M.;
Zhou, Chuanzhen;
Fancher, Chris M.;
Jones, Jacob L.;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700171

By:

Tseng, Yi‐Ting;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Chang, Kuan‐Chang;
Tsai, Tsung‐Ming;
Shih, Chih‐Cheng;
Huang, Hui‐Chun;
Yang, Cheng‐Chi;
Lin, Chih‐Yang;
Wu, Cheng‐Hsien;
Zheng, Hao‐Xuan;
Zhang, Shengdong;
Sze, Simon M.

Publication type:

Article

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 4, p. 1, doi. 10.1002/aelm.201600505

By:

Fengler, Franz P. G.;
Pešić, Milan;
Starschich, Sergej;
Schneller, Theodor;
Künneth, Christopher;
Böttger, Ulrich;
Mulaosmanovic, Halid;
Schenk, Tony;
Park, Min Hyuk;
Nigon, Robin;
Muralt, Paul;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600173

By:

Grimley, Everett D.;
Schenk, Tony;
Sang, Xiahan;
Pešić, Milan;
Schroeder, Uwe;
Mikolajick, Thomas;
LeBeau, James M.

Publication type:

Article

Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications.

Published in:

Nano Convergence, 2025, v. 12, n. 1, p. 1, doi. 10.1186/s40580-025-00481-6

By:

Nguyen, Manh-Cuong;
Min, Kyung Kyu;
Shin, Wonjun;
Yim, Jiyong;
Choi, Rino;
Kwon, Daewoong

Publication type:

Article

Optical properties of nanocrystalline HfO2 synthesized by an auto-igniting combustion synthesis.

Published in:

Journal of Asian Ceramic Societies, 2015, v. 3, n. 1, p. 64, doi. 10.1016/j.jascer.2014.10.009

By:

Padma Kumar, H.;
Vidya, S.;
Saravana Kumar, S.;
Vijayakumar, C.;
Solomon, Sam;
Thomas, J.K.

Publication type:

Article

P-15: High-Performance Fully Transparent Hafnium-Doped Zinc Oxide TFTs Fabricated at Low Temperature.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 997, doi. 10.1002/j.2168-0159.2014.tb00259.x

By:

Wu, Jing;
Han, Dedong;
Zhao, Nannan;
Chen, Zhuofa;
Cong, Yingying;
Zhao, Feilong;
Dong, Junchen;
Zhang, Shengdong;
Zhang, Xing;
Wang, Yi

Publication type:

Article

Fabrication of nano memory using memristor for artificial intelligence.

Published in:

International Journal of Electronics Letters, 2025, v. 13, n. 2, p. 186, doi. 10.1080/21681724.2024.2444654

By:

Nanoti, N. G.;
Kshirsagar, U.A.;
Choudhury, Bikash Dev

Publication type:

Article

TCAD performance analysis of a symmetrical double gate non-aligned junction FET device with high and low dielectric gate oxide in sub-100 nm regime.

Published in:

International Journal of Electronics Letters, 2023, v. 11, n. 4, p. 399, doi. 10.1080/21681724.2023.2173803

By:

Naik, Vasu Banoth;
Sinha, Arun Kumar

Publication type:

Article

First Characterization of a Hafnia Phage Reveals Extraordinarily Large Burst Size and Unusual Plaque Polymorphism.

Published in:

Frontiers in Microbiology, 2022, v. 12, p. 1, doi. 10.3389/fmicb.2021.754331

By:

Pan, Lingting;
Li, Dengfeng;
Sun, Zhitong;
Lin, Wei;
Hong, Binxin;
Qin, Weinan;
Xu, Lihua;
Liu, Wencai;
Zhou, Qin;
Wang, Fei;
Cai, Ruqian;
Qian, Minhua;
Tong, Yigang

Publication type:

Article

Virulence factors and pathogenicity of Hafnia alvei for gilthead seabream, Sparus aurata L.

Published in:

Journal of Fish Diseases, 2005, v. 28, n. 7, p. 411, doi. 10.1111/j.1365-2761.2005.00643.x

By:

Padilla, D.;
Real, F.;
Gómez, V.;
Sierra, E.;
Acosta, B.;
Déniz, S.;
Acosta, F.

Publication type:

Article

Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 12, p. N.PAG, doi. 10.1002/pssr.201900414

By:

Liu, Chien;
Tung, Yi-Chun;
Wu, Tian-Li;
Cheng, Chun-Hu;
Tseng, Chih-Yang;
Chen, Hsuan-Han;
Chen, Hsi-Han;
Ma, Jun;
Lin, Chien-Liang;
Zheng, Zhi-Wei;
Chou, Wu-Ching;
Hsu, Hsiao-Hsuan

Publication type:

Article

Indium Diffusion Behavior and Application in HfO2‐Based Conductive Bridge Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900285

By:

Zheng, Hao-Xuan;
Shih, Chih-Cheng;
Chang, Ting-Chang;
Shih, Lin-Yi;
Shih, Yao-Kai;
Tseng, Yi-Ting;
Chen, Wen-Chung;
Huang, Wei-Chen;
Yang, Chih-Cheng;
Wu, Pei-Yu;
Huang, Hui-Chun;
Tsai, Tsung-Ming;
Sze, Simon M.

Publication type:

Article

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800573

By:

Cheng, Chun‐Hu;
Lin, Ming‐Huei;
Chen, Hsin‐Yu;
Fan, Chia‐Chi;
Liu, Chien;
Hsu, Hsiao‐Hsuan;
Chang, Chun‐Yen

Publication type:

Article

Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 2, p. N.PAG, doi. 10.1002/pssr.201800493

By:

Cheng, Chun‐Hu;
Fan, Chia‐Chi;
Hsu, Hsiao‐Hsuan;
Wang, Shih‐An;
Chang, Chun‐Yen

Publication type:

Article

Passivation of Phosphorus Diffused Black Multi-Crystalline Silicon by Hafnium Oxide (Phys. Status Solidi RRL 12/2017).

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 12, p. n/a, doi. 10.1002/pssr.201770363

By:

Cui, Jie;
Phang, Sieu Pheng;
Sio, Hang Cheong;
Wan, Yimao;
Chen, Yifeng;
Verlinden, Pierre;
Cuevas, Andres

Publication type:

Article

Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 10, p. n/a, doi. 10.1002/pssr.201700098

By:

Cheng, Chun-Hu;
Chiu, Yu-Chien;
Liou, Guan-Lin

Publication type:

Article

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 10, p. 589, doi. 10.1002/pssr.201510270

By:

Guan, Yan;
Zhou, Dayu;
Xu, Jin;
Liu, Xiaohua;
Cao, Fei;
Dong, Xianlin;
Müller, Johannes;
SchENk, Tony;
Schroeder, Uwe

Publication type:

Article

Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2 film on Ge substrate for interface passivation.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 9, p. 511, doi. 10.1002/pssr.201510237

By:

Cho, Deok ‐ Yong;
Seok, Tae Jun;
Jin, Hyun Soo;
Song, Hochul;
Han, Seungwu;
Park, Tae Joo

Publication type:

Article