Works matching DE "INDIUM gallium nitride"

Results: 523

Device-Quality InGaN Templates With In Content Greater Than 10%: A Potential Solution for Red LED Problems.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3397, doi. 10.1007/s11664-025-11853-3

By:

Routh, Evyn L.;
Abdelhamid, Mostafa;
Bedair, Salah M.

Publication type:

Article

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2340, doi. 10.1007/s11664-024-11664-y

By:

Murugapandiyan, P.;
Revathy, A.;
Ramkumar, N.;
Kumar, R. Saravana;
Mohanbabu, A.

Publication type:

Article

Frontispiece: Mechanistic Insight into Energy‐Transfer Dynamics and Color Tunability of Na4CaSi3O9:Tb3+,Eu3+ for Warm White LEDs.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 25, p. 1, doi. 10.1002/chem.201905607

By:

He, Jin;
Yan, Cheng;
Huang, Minmin;
Shi, Rui;
Chen, Yibo;
Ling, Chris D.;
Liu, Zhao‐Qing

Publication type:

Article

Performance enhancement by different sidewall structures for InGaN-based light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3645, doi. 10.1007/s10854-014-2069-x

By:

Wang, Min-Shuai;
Huang, Xiao-Jing;
Yang, Lan

Publication type:

Article

Indium rich InGaN solar cells grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 8, p. 3652, doi. 10.1007/s10854-014-2070-4

By:

Çakmak, H.;
Arslan, Engin;
Rudziński, M.;
Demirel, P.;
Unalan, H.;
Strupiński, W.;
Turan, R.;
Öztürk, M.;
Özbay, E.

Publication type:

Article

The formation of quantum dot structures in 30-pair InGaN/GaN multiple quantum wells after proper thermal annealing treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 10, p. 1830, doi. 10.1007/s10854-012-0670-4

By:

Lin, Yen-Sheng;
Kuo, Ho-Hung;
Feng, Shih-Wei

Publication type:

Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370014

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

Very High Density (>1014 cm−2) Polarization‐Induced 2D Hole Gases Observed in Undoped Pseudomorphic InGaN/AlN Heterostructures.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101120

By:

Chaudhuri, Reet;
Zhang, Zexuan;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Article

Monolithic Multi‐Color Tunable Inorganic Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100598

By:

Baek, Seung‐Hye;
Kim, Hee‐Wung;
Lee, Gun‐Woo;
Lee, Sung‐Nam

Publication type:

Article

Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE.

Published in:

Technical Physics Letters, 2024, v. 50, n. 2, p. 133, doi. 10.1134/S1063785023170145

By:

Kukushkin, S. A.;
Osipov, A. V.;
Redkov, A. V.;
Stozharov, V. M.;
Ubiyvovk, E. V.;
Sharofidinov, Sh. Sh.

Publication type:

Article

Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN.

Published in:

Technical Physics Letters, 2023, v. 49, p. S364, doi. 10.1134/S106378502390073X

By:

Gridchin, V. O.;
Soshnikov, I. P.;
Reznik, R. R.;
Komarov, S. D.;
Pirogov, E. V.;
Lendyashova, V. V.;
Kotlyar, K. P.;
Kryzhanovskaya, N. V.;
Cirlin, G. E.

Publication type:

Article

Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance.

Published in:

Photonics, 2025, v. 12, n. 3, p. 276, doi. 10.3390/photonics12030276

By:

Hua, Zinan;
Dong, Hailiang;
Jia, Zhigang;
Jia, Wei;
Shang, Lin;
Xu, Bingshe

Publication type:

Article

Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current.

Published in:

Photonics, 2024, v. 11, n. 11, p. 1012, doi. 10.3390/photonics11111012

By:

An, Bing;
Wang, Yukun;
Wang, Yachao;
Zou, Zhijie;
Mei, Yang;
Long, Hao;
Zheng, Zhiwei;
Zhang, Baoping

Publication type:

Article

62.4: PFS, K2SiF6:Mn4+: the Red-line Emitting LED Phosphor behind GE's TriGain Technology™ Platform.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 927, doi. 10.1002/sdtp.10406

By:

Murphy, James E.;
Garcia‐Santamaria, Florencio;
Setlur, Anant A.;
Sista, Srinivas

Publication type:

Article

Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma.

Published in:

2021

By:

Frye, Clint D.;
Donald, Scott B.;
Reinhardt, Catherine E.;
Nikolic, Rebecca J.;
Voss, Lars F.;
Harrison, Sara E.

Publication type:

Report

Design of Efficient Type‐II ZnGeN2/In0.16Ga0.84N Quantum Well‐Based Red LEDs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900170

By:

Hyot, Bérangère;
Rollès, Mélanie;
Miska, Patrice

Publication type:

Article

Impact of surface recombination on efficiency of III-nitride light-emitting diodes.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 6, p. 480, doi. 10.1002/pssr.201600059

By:

Bulashevich, Kirill A.;
Karpov, Sergey Yu.

Publication type:

Article

Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/671210

By:

Manh-Ha Doan;
Jaejin Lee

Publication type:

Article

High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers.

Published in:

Advances in Condensed Matter Physics, 2012, p. 1, doi. 10.1155/2012/145689

By:

Ya-Fen Wu

Publication type:

Article

Anomalous dispersion via coherent field in an InGaN/GaN quantum dot nanostructure.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 4, p. -1, doi. 10.1142/S0217984916500202

By:

Solookinejad, Ghahraman;
Panahi, Mohsen;
Sangachin, Elnaz Ahmadi;
Asadpour, Seyyed Hossein

Publication type:

Article

Controlling of group velocity via terahertz signal radiation in a defect medium doped by four-level InGaN/GaN quantum dot nanostructure.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 20, p. -1, doi. 10.1142/S0217984915501043

By:

Jafarzadeh, Hossein;
Sangachin, Elnaz Ahmadi;
Asadpour, Seyyed Hossein

Publication type:

Article

A Comparative Study of Violet InGaN Double Quantum Well Lasers with 1.89 and 0.80 eV InN Bandgap Energies.

Published in:

Lasers in Engineering (Old City Publishing), 2016, v. 34, n. 1-3, p. 183

By:

ALAHYARIZADEH, G.;
AMIRHOSEINY, M.;
RAHMANI, R.;
HASSAN, Z.

Publication type:

Article

Electroluminescence of InGaN/GaN heterostructures at the reverse bias and nitrogen temperature.

Published in:

Optica Applicata, 2015, v. 45, n. 4, p. 535, doi. 10.5277/oa150409

By:

VELESCHUK, VITALY;
VLASENKO, ALEXANDER;
KISSELYUK, MAXIM;
VLASENKO, ZOYA;
KHMIL, DENIS;
BORSHCH, VLADIMIR

Publication type:

Article

Performance enhancement of InGaN based near ultraviolet LEDs with asymmetric staggered quantum wells.

Published in:

Optical & Quantum Electronics, 2024, v. 56, n. 2, p. 1, doi. 10.1007/s11082-023-05714-8

By:

Xu, Chaozhi;
Cai, Lie;
Chen, Zhichao;
Lin, Haoxiang;
Niu, Kai;
Cheng, Zai-Jun;
Sun, Dong;
Zhao, MingJie

Publication type:

Article

Electronic band structure pseudopotential calculation of InGaN/GaN quantum wells.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 1, p. 1, doi. 10.1007/s11082-022-04244-z

By:

Zinovchuk, A. V.;
Slipokurov, V. S.

Publication type:

Article

Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 12, p. 1, doi. 10.1007/s11082-022-04275-6

By:

Dolia, Richa;
Quraishi, A. M.;
Kattayat, Sandhya;
Josey, Smitha;
Dalela, Saurabh;
Ezzeldien, Mohammed;
Alvi, P. A.

Publication type:

Article

Optimization of InGaN quantum-dot based light-emitting diodes by means of cellular automata algorithms.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 7, p. 1, doi. 10.1007/s11082-022-03807-4

By:

Teodorani, Maria Cristina;
Barettin, Daniele

Publication type:

Article

GaN-based bipolar cascade lasers with 25 nm wide quantum wells.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 1, p. 1, doi. 10.1007/s11082-021-03455-0

By:

Piprek, Joachim;
Muziol, G.;
Siekacz, M.;
Skierbiszewski, C.

Publication type:

Article

Multiplication width dependent avalanche characteristics in GaN/4H-SiC heterojunction avalanche photodiodes.

Published in:

Optical & Quantum Electronics, 2021, v. 53, n. 10, p. 1, doi. 10.1007/s11082-021-03213-2

By:

Cheang, P. L.;
Wong, E. K.;
Teo, L. L.

Publication type:

Article

Influence of temperature on different optoelectronic characteristics of InGaN light emitting diodes.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 8, p. 1, doi. 10.1007/s11082-017-1104-6

By:

Dalapati, Pradip;
Manik, Nabin;
Basu, Asok

Publication type:

Article

The Confinement Profile Effect on the Optical Properties in Different Inverse-shaped Single InGaN/GaN Quantum Wells.

Published in:

Iraqi Journal of Physics, 2022, v. 20, n. 1, p. 1, doi. 10.30723/ijp.v20i1.965

By:

En-nadir, Redouane;
El Ghazi, Haddou;
Belaid, Walid;
Abboudi, Hassan;
Jabouti, Fathallah;
Jorio, Anouar;
Zorkani, Izeddine

Publication type:

Article

Simulation and Analysis of n-Type Electron Blocking Layers in GaN-Based Light-Emitting Diodes.

Published in:

Mathematical Modelling of Engineering Problems, 2024, v. 11, n. 11, p. 2912, doi. 10.18280/mmep.111104

By:

Tani, Wassila Kazi;
Khedim, Siham;
Amara, Sofiane

Publication type:

Article

A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations.

Published in:

Optics & Spectroscopy, 2022, v. 130, n. 3, p. 137, doi. 10.1134/S0030400X2203002X

By:

Das, Aparna

Publication type:

Article

All-solid-state 360 nm ultraviolet laser generated by intracavity frequency-doubling of diode-pumped Pr:YLiF laser.

Published in:

Optics & Spectroscopy, 2015, v. 118, n. 6, p. 998, doi. 10.1134/S0030400X15060259

By:

Zhang, C.;
Yu, W.;
Yao, Y.;
Zhu, P.;
Song, P.;
Bai, L.

Publication type:

Article

Investigation of InGaN-Based Green Micro-Photonic-Crystal- Light-Emitting-Diodes with Bottom, Nanoporous, Distributed Bragg Reflectors.

Published in:

Photonics, 2022, v. 9, n. 12, p. 939, doi. 10.3390/photonics9120939

By:

Hong, Kuo-Bin;
Huang, Wei-Ta;
Hsu, Wen-Cheng;
Tu, Chang-Ching;
Kuo, Hao-Chung

Publication type:

Article

Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT).

Published in:

Photonics, 2022, v. 9, n. 9, p. N.PAG, doi. 10.3390/photonics9090646

By:

Tan, Gary;
Shuhaimi, Ahmad;
Norhaniza, Rizuan;
Zahir, Norhilmi;
Low, Yan Jie;
Wong, Yew Hoong;
Majid, Wan Haliza Abd

Publication type:

Article

Development of Micron Sized Photonic Devices Based on Deep GaN Etching.

Published in:

Photonics, 2021, v. 8, n. 3, p. 68, doi. 10.3390/photonics8030068

By:

Dogheche, Karim;
Alshehri, Bandar;
Patriache, Galles;
Dogheche, Elhadj

Publication type:

Article

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices.

Published in:

Photonics, 2019, v. 6, n. 2, p. 44, doi. 10.3390/photonics6020044

By:

B. Kashyout, Abd El-Hady;
Fathy, Marwa;
Gad, Sara;
Badr, Yehia;
A. Bishara, Ahmed

Publication type:

Article

LED Internal Quantum Efficiency Meter.

Published in:

Instruments & Experimental Techniques, 2023, v. 66, n. 6, p. 987, doi. 10.1134/S0020441223060076

By:

Sergeev, V. A.;
Radaev, O. A.;
Frolov, I. V.

Publication type:

Article

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-08323-9

By:

Xing, Zhang;
Akter, Afroja;
Kum, Hyun S.;
Baek, Yongmin;
Ra, Yong-Ho;
Yoo, Geonwook;
Lee, Kyusang;
Mi, Zetian;
Heo, Junseok

Publication type:

Article

Closing the yellow gap with Eu- and Tb-doped GaN: one luminescent host resulting in three colours.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-06148-0

By:

Braun, Cordula;
Mereacre, Liuda;
Chen, Zheng;
Slabon, Adam

Publication type:

Article

Study on the effect of size on InGaN red micro-LEDs.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05370-0

By:

Horng, Ray-Hua;
Ye, Chun-Xin;
Chen, Po-Wei;
Iida, Daisuke;
Ohkawa, Kazuhiro;
Wu, Yuh-Renn;
Wuu, Dong-Sing

Publication type:

Article

Experimental Validation of Fuel Cell Powered Energy Efficient Gallium Nitride Multilevel Inverter for Industrial Applications.

Published in:

Journal of New Materials for Electrochemical Systems, 2021, v. 24, n. 3, p. 159, doi. 10.14447/jnmes.v24i3.a03

By:

RavindranathTagore, Y.;
Babu, A. R. Vijay;
Srinivasarao, Y.;
Kumar, P. Manoj;
Anuradha, K.

Publication type:

Article

Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor.

Published in:

Journal of New Materials for Electrochemical Systems, 2016, v. 19, n. 1, p. 11, doi. 10.14447/jnmes.v19i1.341

By:

Hsiang Chen;
Yun Yang He;
Min Han Lin;
Shang Ren Lin;
Sheng-Hao Hung;
Kun Min Hsieh;
Shin-Jie Tsai;
Yu-Cheng Chu

Publication type:

Article

Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor.

Published in:

Journal of New Materials for Electrochemical Systems, 2016, v. 19, n. 1, p. 7, doi. 10.14447/jnmes.v19i1.340

By:

Hsiang Chen;
Kun Min Hsieh;
Yun Yang He;
Li Chen Chu;
Ming Ling Lee;
Kow Ming Chang

Publication type:

Article

Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure.

Published in:

Semiconductors, 2021, v. 55, n. 7, p. 617, doi. 10.1134/S1063782621070113

By:

Mynbaeva, M. G.;
Smirnov, A. N.;
Mynbaev, K. D.

Publication type:

Article

High-Quality Etching of GaN Materials with Extremely Slow Rate and Low Damage.

Published in:

Semiconductors, 2021, v. 55, n. 3, p. 387, doi. 10.1134/S1063782621030180

By:

Zhang, X.-M.;
Yan, C.-L.;
Yu, G.-H.;
Zeng, C.-H.;
Sun, T.-Y.;
Xing, Z.;
Wang, Y.-Q.;
Yang, J.-H.;
Zhang, B.-S.

Publication type:

Article

Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2100, doi. 10.1134/S1063782619120170

By:

Mitrofanov, M. I.;
Voznyuk, G. V.;
Rodin, S. N.;
Lundin, W. V.;
Evtikhiev, V. P.;
Tsatsulnikov, A. F.

Publication type:

Article

InGaN/GaN QDs Nanorods: Processing and Properties.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2096, doi. 10.1134/S1063782618160145

By:

Kotlyar, K. P.;
Soshnikov, I. P.;
Morozov, I. A.;
Berezovskaya, T. N.;
Kryzhanovskaya, N. V.;
Kudryashov, D. A.;
Lysak, V. V.

Publication type:

Article