Works matching DE "IMPURITY distribution in semiconductors"
Results: 157
Diversity of Microstructure of Polymer Solid Investigated by Motion of Impurity Ions.
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- Macromolecular Symposia, 2016, v. 365, n. 1, p. 169, doi. 10.1002/masy.201650005
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Pattern formation in semiconductors.
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- Nature, 1999, v. 397, n. 6718, p. 398
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Suppression of the virtual anderson transition in the impurity band of doped quantum well structures.
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- JETP Letters, 2011, v. 94, n. 2, p. 116, doi. 10.1134/S0021364011140025
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Cyclotron resonance in a two-dimensional semimetal.
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- JETP Letters, 2011, v. 93, n. 4, p. 209, doi. 10.1134/S0021364011040138
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Anomalous temperature dependence of the order parameter of a superconductor with weakly correlated impurities.
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- JETP Letters, 2011, v. 93, n. 3, p. 144, doi. 10.1134/S0021364011030040
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Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures.
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- JETP Letters, 2008, v. 88, n. 3, p. 197, doi. 10.1134/S0021364008150113
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Laser plasma acceleration of quasi-monoenergetic beams of light multicharged ions.
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- JETP Letters, 2007, v. 85, n. 1, p. 23, doi. 10.1134/S0021364007010055
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Effect of different impurity atoms on 1/ f <sup>α</sup> tunneling current noise characteristics on InAs(110) surface.
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- JETP Letters, 2007, v. 85, n. 1, p. 40, doi. 10.1134/S0021364007010080
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Superconductor-insulator transition in (Pb<sub>z</sub>Sn<sub>1− z </sub>)<sub>0.84</sub>In<sub>0.16</sub>Te.
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- JETP Letters, 2006, v. 84, n. 1, p. 35, doi. 10.1134/S002136400613008X
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Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity.
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- JETP Letters, 2006, v. 83, n. 8, p. 351, doi. 10.1134/S002136400608011X
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Structural Change Induced in LaAlO<sub>3</sub> by Ion Implantation.
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- IEEJ Transactions on Electrical & Electronic Engineering, 2016, v. 11, n. 1, p. 5, doi. 10.1002/tee.22181
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KLEIN TUNNELING IN THE PRESENCE OF RANDOM IMPURITIES.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2012, v. 23, n. 12, p. 1, doi. 10.1142/S0129183112500805
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EFFICIENCY OF GENETIC ALGORITHM AND DETERMINATION OF GROUND STATE ENERGY OF IMPURITY IN A SPHERICAL QUANTUM DOT.
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- International Journal of Modern Physics C: Computational Physics & Physical Computation, 2003, v. 14, n. 6, p. 775, doi. 10.1142/S0129183103004917
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Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures.
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- Semiconductors, 2018, v. 52, n. 6, p. 692, doi. 10.1134/S1063782618060192
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Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
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- Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
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THE MONTE-CARLO SIMULATION OF TRANSPORT IN QUANTUM WELL GaAs/AlGaAs HETEROSTRUCTURE DOPED WITH SHALLOW DONORS UNDER IMPURITY BREAKDOWN.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 253, doi. 10.1142/S0219581X0700447X
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ON VARIATION OF CHARGE CARRIER TRANSPORT IN p-n-JUNCTIONS AFTER OPTIMIZED IMPURITY DISTRIBUTIONS.
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- Journal of Modern Technology & Engineering, 2021, v. 6, n. 2, p. 151
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Limiting impurity distribution during zone refining.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 460, doi. 10.1134/S1063785014060029
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Method of selective doping of silicon by segregating impurities.
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- Technical Physics Letters, 2011, v. 37, n. 9, p. 824, doi. 10.1134/S106378501109015X
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Dynamics of smoke transfer from a localized source by a tornado-like vortex.
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- Technical Physics Letters, 2009, v. 35, n. 8, p. 717, doi. 10.1134/S1063785009080094
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Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle dependence.
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- Journal of Synchrotron Radiation, 2005, v. 12, n. 4, p. 494, doi. 10.1107/S0909049505011003
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New Insights into the Morphological Stability of Eutectic and Peritectic Coupled Growth.
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- JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2004, v. 56, n. 4, p. 28, doi. 10.1007/s11837-004-0069-7
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Solid-state physics: Doping the undopable.
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- Nature, 2005, v. 436, n. 7047, p. 32, doi. 10.1038/436032a
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A combined fully Lagrangian approach to modeling two-phase dispersed flows.
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- Doklady Physics, 2013, v. 58, n. 6, p. 244, doi. 10.1134/S1028335813060037
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Growth and Elemental Analysis of a Series of KTi<sub>1-x</sub>Zr<sub>x</sub>OPO<sub>4</sub> Crystals.
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- Crystallography Reports, 2018, v. 63, n. 3, p. 488, doi. 10.1134/S1063774518030094
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Impurity detection in polymer parts for the semiconductor manufacturing industry.
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- Technisches Messen, 2018, v. 85, n. 11, p. 700, doi. 10.1515/teme-2018-0056
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An analysis of a kick-out diffusion mechanism with charge effects.
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- Quarterly Journal of Mechanics & Applied Mathematics, 1998, v. 51, n. 4, p. 515, doi. 10.1093/qjmam/51.4.515
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Synthesis and characterization of bulk cobalt-doped ZnO and their thin films.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 10, p. 3115, doi. 10.1007/s10948-013-2128-1
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Spin-Resolved Local Density of States for an Anderson Adatom in a Ferromagnetic Island.
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- Journal of Superconductivity & Novel Magnetism, 2013, v. 26, n. 6, p. 2197, doi. 10.1007/s10948-012-1428-1
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Neutron Powder Diffraction Study in LaAgMnO.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 6, p. 1933, doi. 10.1007/s10948-011-1147-z
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Preparation of Y[YbNd]BaCuO Superconductors Using Nitrate Routes.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 4, p. 1309, doi. 10.1007/s10948-010-0824-7
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Impurity-Related Local Density-of-States Modulation in BiSrCa(CuZn)O Probed by Scanning Tunneling Spectroscopy.
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- Journal of Superconductivity & Novel Magnetism, 2011, v. 24, n. 1/2, p. 481, doi. 10.1007/s10948-010-0976-5
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Whither the oxide interface.
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- 2012
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- Opinion
Fermi integral and density-of-states functions in a parabolic band semiconductor degenerately doped with impurities forming a band tail.
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- Pramana: Journal of Physics, 2018, v. 90, n. 2, p. 1, doi. 10.1007/s12043-017-1494-9
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Intrinsic localized modes and nonlinear impurity modes in curved Fermi--Pasta--Ulam chain.
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- Pramana: Journal of Physics, 2008, v. 70, n. 6, p. 1023, doi. 10.1007/s12043-008-0106-0
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Impurity Transport in Percolation Media.
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- JETP Letters, 2004, v. 80, n. 6, p. 410, doi. 10.1134/1.1830658
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Problem of Impurity States in Narrow-Gap Lead Telluride–Based Semiconductors.
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- JETP Letters, 2004, v. 80, n. 2, p. 133, doi. 10.1134/1.1804224
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Impurity Pairs and Excitation Relaxation in Doped Silicon.
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- JETP Letters, 2004, v. 79, n. 12, p. 650, doi. 10.1134/1.1790025
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Undamped self-oscillations and dynamical chaos under conditions of impurity breakdown of a semiconductor in the fixed-current regime.
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- JETP Letters, 1998, v. 67, n. 5, p. 358, doi. 10.1134/1.567674
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Intense field effects on shallow donor impurities in a quantum wire.
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- European Physical Journal B: Condensed Matter, 2009, v. 71, n. 2, p. 225, doi. 10.1140/epjb/e2009-00288-x
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A COMPARISON OF THE RESISTIVITY BEHAVIOR OF MgB<sub>2</sub>, AlB<sub>2</sub> AND AgB<sub>2</sub> SYSTEMS.
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- Modern Physics Letters B, 2006, v. 20, n. 16, p. 989, doi. 10.1142/S0217984906011116
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THE INFLUENCE OF AN IMPURITY ON PERSISTENT CURRENTS IN CROSSING MESOSCOPIC DOUBLE RINGS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2255, doi. 10.1142/S0217979208039472
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THEORETICAL STUDIES OF THE ZERO-FIELD SPLITTING AND g FACTOR FOR Gd<sup>3+</sup> IN La<sub>2-x</sub>Sr<sub>x</sub>CuO<sub>4</sub>.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, v. 21, n. 18/19, p. 3254, doi. 10.1142/S0217979207044317
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CARRIER MOBILITY IN A SEMICONDUCTOR QUANTUM WELL WIRE–EFFECTS OF EXTERNAL PERTURBATIONS.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2006, v. 20, n. 1, p. 49, doi. 10.1142/S0217979206033048
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Impurity radiation from a tokamak plasma.
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- Plasma Physics Reports, 2007, v. 33, n. 11, p. 906, doi. 10.1134/S1063780X07110037
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One Possible Way to Affect the Impurity Influx into the Plasma of a Stellarator with Poloidal Slits in the Vacuum Wall.
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- Plasma Physics Reports, 2001, v. 27, n. 12, p. 1011, doi. 10.1134/1.1426134
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Fe-doped SnO<sub>2</sub>: A Quantum-chemical Approach.
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- Journal of Nano- & Electronic Physics, 2015, v. 7, n. 2, p. 02032-1
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The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction.
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- Journal of Nano- & Electronic Physics, 2012, v. 4, n. 3, p. 3026-1
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THE ELECTRIC FIELD DEPENDENCE OF THE PHOTOIONIZATION CROSS-SECTION OF SHALLOW DONOR IMPURITIES IN QUANTUM DOTS:: INFINITE AND FINITE MODEL.
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- Surface Review & Letters, 2006, v. 13, n. 6, p. 747, doi. 10.1142/S0218625X06008797
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THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL.
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- Surface Review & Letters, 2005, v. 12, n. 2, p. 155, doi. 10.1142/S0218625X05006871
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